US Patent:
20210358865, Nov 18, 2021
Inventors:
- Santa Clara CA, US
Kai Sun - Clifton Park NY, US
Elizabeth Strehlow - Malta NY, US
James Mazza - Saratoga Springs NY, US
David Pritchard - Glenville NY, US
Heng Yang - Rexford NY, US
Mohamed Rabie - Clifton Park NY, US
International Classification:
H01L 23/00
H01L 29/06
H01L 29/423
H01L 29/78
H01L 29/66
Abstract:
An illustrative device disclosed herein includes a semiconductor substrate and a FinFET transistor device positioned above the semiconductor substrate, wherein the FinFET transistor device has a single active fin structure. The device also includes an electrically inactive dummy fin structure positioned adjacent the single active fin structure, wherein the electrically inactive dummy fin structure is electrically inactive with respect to electrical operation of the FinFET transistor having the single active fin.