Search

Mira H Bakshi

from Hayward, CA
Age ~71
Get Report
Connected to:
Abdul K Bakshi, 73Amrita Bakshi, 45Anand P Bakshi, 33Anita L Bakshi, 49Anupam Bakshi, 57Arti Bakshi, 68Connie Bakshi, 41Debashish Bakshi, 39Haresh A Bakshi, 87Kapildeep S Bakshi, 51

Mira Bakshi Phones & Addresses

  • Hayward, CA
  • Menlo Park, CA
  • Palo Alto, CA
  • Mountain View, CA

Publications

Us Patents

Method For Measuring Peak Carrier Concentration In Ultra-Shallow Junctions

View page
US Patent:
7403022, Jul 22, 2008
Filed:
Jan 19, 2006
Appl. No.:
11/334962
Inventors:
Alex Salnik - Castro Valley CA, US
Lena Nicolaides - Castro Valley CA, US
Jon Opsal - Livermore CA, US
Mira Bakshi - Hayward CA, US
Assignee:
KLA-Tencor, Inc. - Milpitas CA
International Classification:
G01R 31/02
US Classification:
324751
Abstract:
A method is disclosed for determining peak carrier concentration in ultra shallow junctions of semiconductor samples. A region of the surface of the sample is periodically excited. The effects of the excitation are monitored by a probe beam. Synchronous detection produces in-phase (I) and quadrature (Q) signals. These signals are compared to signals obtained from calibration samples to evaluate peak carrier concentration.

Method For Measuring Ion-Implanted Semiconductors With Improved Repeatability

View page
US Patent:
20050195399, Sep 8, 2005
Filed:
Feb 28, 2005
Appl. No.:
11/067961
Inventors:
Lena Nicolaides - Castro Valley CA, US
Mira Bakshi - Hayward CA, US
Alex Salnik - Castro Valley CA, US
Jon Opsal - Livermore CA, US
International Classification:
G01N021/55
US Classification:
356432000, 356445000
Abstract:
The repeatability of wafer uniformity measurements can be increased by taking spatially averaged measurements of wafer response. By increasing the time over which measurements are obtained, the amount of noise can be significantly reduced, thereby improving the repeatability of the measurements. These measurements can be taken at several locations on the wafer to ensure wafer uniformity. In order to get a stable and repeatable assessment of the wafer process, addressing uncertainties related to damage relaxation or incomplete anneal, an anneal decay factor (ADF) characterization can be performed at a distance away from the TW measurement boxes. From the ADF measurement and the spatially averaged measurements of wafer response, a repeatable assessment of the wafer process can be obtained.
Control profile
Mira H Bakshi from Hayward, CA, age ~71 Get Report