Michael J Becker

7147810, Dec 12, 2006

Oct 31, 2003

10/698921

Donnie K. Reinhard - East Lansing MI, US
Jes Asmussen - Okemos MI, US
Michael F. Becker - East Lansing MI, US
Timothy A. Grotjohn - Okemos MI, US
Thomas Schuelke - Brighton MI, US
Roger Booth - Twin Lake MI, US

Fraunhofer USA, Inc. - Plymouth MI
Board of Trustees of Michigan State University - East Lansing MI

C23C 16/01
C23C 16/27

264 81, 4272498, 427336, 156 60

Wetted thin diamond films which are drapable are described. The films are mounted on various substrates and used as windows for electromagnetic radiation or form a surface coating on an article of manufacture.

8316797, Nov 27, 2012

Jun 16, 2009

12/456388

Jes Asmussen - East Lansing MI, US
Timothy Grotjohn - Okemos MI, US
Donnie K. Reinhard - East Lansing MI, US
Thomas Schuelke - Brighton MI, US
M. Kagan Yaran - Lansing MI, US
Kadek W. Hemawan - East Lansing MI, US
Michael Becker - East Lansing MI, US
David King - Lansing MI, US
Yajun Gu - Lansing MI, US
Jing Lu - East Lansing MI, US

Board of Trustees of Michigan State University Fraunhofer USA - East Lansing, Plymouth MI

C23C 16/00
C23F 1/00
H01L 21/306

118723MW, 118723 ME, 118723 MR, 15634535, 15634536, 15634541

New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.

20090239078, Sep 24, 2009

Mar 10, 2009

12/381270

Jes Asmussen - East Lansing MI, US
Timothy Grotjohn - Okemos MI, US
Donnie Reinhard - East Lansing MI, US
Rahul Ramamurti - San Ramon CA, US
M. Kagan Yaran - Lansing MI, US
Thomas Schuelke - Brighton MI, US
Michael Becker - East Lansing MI, US
David King - Lansing MI, US

Board of Trustees of Michigan State University - East Lansing MI
Fraunhofer USA - Plymouth MI

C23C 16/27
H05H 1/46
B32B 9/00

428408, 427575, 118723 MW

The present invention relates to a microwave plasma deposition process and apparatus for producing diamond, preferably as single crystal diamond (SCD). The process and apparatus enables the production of multiple layers of the diamond by the use of an extending device to increase the length and the volume of a recess in a holder containing a SCD substrate as layers of diamond are deposited. The diamond is used for abrasives, cutting tools, gems, electronic substrates, heat sinks, electrochemical electrodes, windows for high power radiation and electron beams, and detectors.

20130069531, Mar 21, 2013

Oct 22, 2012

13/657366

BOARD OF TRUSTEES OF MICHIGAN STATE U - East Lansing MI, US
FRAUNHOFER USA - Plymouth MI, US
Donnie K. Reinhard - East Lansing MI, US
Thomas Schuelke - Brighton MI, US
M. Kagan Yaran - Lansing MI, US
Kadek W. Hemawan - East Lansing MI, US
Michael Becker - East Lansing MI, US
David King - Lansing MI, US
Yajun Gu - Lansing MI, US
Jing Lu - East Lansing MI, US

FRAUNHOFER USA - Plymouth MI
BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY - East Lansing MI

H05H 1/46

31511121

New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.

20130101730, Apr 25, 2013

Oct 22, 2012

13/657353

Board of Trustees of Michigan State University - East Lansing MI, US
Fraunhofer USA - Plymouth MI, US
Donnie K. Reinhard - East Lansing MI, US
Thomas Schuelke - Brighton MI, US
M. Kagan Yaran - Lansing MI, US
Kadek W. Hemawan - East Lansing MI, US
Michael Becker - East Lansing MI, US
David King - Lansing MI, US
Yajun Gu - Lansing MI, US
Jing Lu - East Lansing MI, US

FRAUNHOFER USA - Plymouth MI
BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY - East Lansing MI

C23C 16/511

427 9, 427575, 118723 MW

New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.

20210364448, Nov 25, 2021

May 21, 2021

17/327456

- Plymouth MI, US
Matthias MUEHLE - Haslett MI, US
Adam PORTER - Washington DC, US
Mikael LINDVALL - Greenbelt MD, US
Michael BECKER - East Lansing MI, US

G01N 21/88
G01N 21/956
G06T 7/00
G06T 7/564
G06T 5/50

Disclosed herein are systems and methods for synthesizing a diamond using a diamond synthesis machine. A processor receives a plurality of images of a diamond during synthesis within a diamond synthesis machine, each of the plurality of images captured within a time period. The processor executes a diamond state prediction machine learning model using the plurality of images to obtain a predicted data object, the predicted data object indicating a predicted state of the diamond within the diamond synthesis machine at a time subsequent to the time period. The processor detects a predicted defect, a number of defects, defect types, and/or sub-features of such defects and/or other characteristics (e.g., a predicted shape, size, and/or other properties of predicted contours for the diamond and/or pocket holder) of the predicted state of the diamond. The processor adjusts operation of the diamond synthesis machine.

20210323848, Oct 21, 2021

Apr 13, 2021

17/229365

- East Lansing MI, US
- Plymouth MI, US
Michael BECKER - East Lansing MI, US
Cory A. RUSINEK - Las Vegas NV, US

Board of Trustees of Michigan State University - East Lansing MI
Fraunhofer USA - Plymouth MI

C02F 1/461

An electrode apparatus for removing contaminants from a fluid is provided. In another aspect, an electrochemical destruction apparatus for wastewater effluent using Boron-doped diamond electrodes is employed. A further aspect of the present apparatus includes a fluid-carrying conduit, electrodes located within the conduit, an electrical controller connected to the electrodes, a sensor connected to the controller being adapted to sense a chemical characteristic associated with contaminants in the fluid, and the controller automatically varying an electrical characteristic associated with at least one of the electrodes based, at least in part, on an input from the sensor. Yet another aspect includes a programmable controller and software which automatically employ a feedback control loop to increase or decrease electrical current density to contaminant-removing electrodes.

20200303236, Sep 24, 2020

Sep 27, 2018

16/650485

- East Lansing MI, US
Thomas SCHUELKE - Pinckney MI, US
Michael BECKER - East Lansing MI, US
Robert RECHENBERG - Vermontville MI, US
Cory RUSINEK - Okemos MI, US

Board of Trustees of Michigan State University - East Lansing MI
Fraunhofer USA - East Lansing MI

H01L 21/763
A61N 1/05
C23C 16/27
H01L 29/04

An electrode is provided. The electrode includes a contact pad composed of boron-doped polycrystalline diamond (BDD); a fiber core composed of BDD extending longitudinally from the contact pad from a first end that is in direct contact with the contact pad to an opposing second end; and a polycrystalline diamond (PCD) cladding that coats and hermetically seals the contact pad and the fiber core. A first portion of the contact pad and a second portion at or near the second end of the fiber core are not coated and hermetically scaled by the PCD cladding. A method of fabricating the electrode is also provided.