Michael G Adlerstein

6762653, Jul 13, 2004

Aug 27, 2002

10/228893

Michael Adlerstein - Wellesley MA
James W. McClymonds - Waltham MA

Raytheon Company - Waltham MA

H01P 512

333125, 333121

An amplifier is provided having an electrically conductive structure. The structure has a waveguide network disposed in an inner region thereof. The network has an input section and an output section. The conductive structure has an amplifier input port and amplifier output port formed in outer wall portions of such structure. The network also includes a plurality of amplifier module input ports disposed in an outer surface of the structure. The amplifier input ports are coupled to the amplifier port through the input section of the network. The network further includes a plurality of amplifier module output ports disposed in said outer surface of the structure. The amplifier module output ports are coupled to the amplifier output port through the output section of the network. Each one of the amplifier module output ports is associated with one of the plurality of amplifier module input ports. The amplifier includes a plurality of amplifier modules.

6991367, Jan 31, 2006

Nov 4, 2003

10/701045

Michael G. Adlerstein - Wellesley MA, US

Raytheon Company - Waltham MA

G01K 7/20

374114, 374185, 374166, 374152

A circuit for determining temperature of an active semiconductor device disposed on a semiconductor substrate and a Wheatstone bridge circuit. The bridge has in each of four branches thereof a thermal sensitive device, one pair of such thermal sensitive devices being in thermal contact with an electrode of the active device. Another pair of such thermal sensitive devices is in thermal contact with the substrate. The thermal sensitive devices are resistors. The active device is a transistor. A tuning circuit is coupled to an output of the transistor, such tuning circuit having a tunable element controlled by a control signal fed to such tunable element. A processor is responsive to a voltage produced at an output of the Wheatstone bridge circuit and a signal representative of power fed to the transistor. The output provided by the Wheatstone bridge provides a measure of a temperature difference between the temperature of the transistor and ambient temperature.

7030600, Apr 18, 2006

Nov 4, 2003

10/701044

Michael G. Adlerstein - Wellesley MA, US
Katherine J. Herrick - Westford MA, US

Raytheon Company - Waltham MA

G01S 3/02

324 7614, 324725

A circuit for sensing radio frequency energy. The circuit includes a Wheatstone bridge having at least one element thereof thermally responsive to the radio frequency energy passing therethough differently from radio frequency energy passing though at least one other element of the bridge.

7202673, Apr 10, 2007

Jul 27, 2006

11/460311

Michael G. Adlerstein - Wellesley MA, US

Raytheon Company - Waltham MA

G01R 27/28

324655, 324633

A microwave integrated circuit chip having microwave transmission line coupled to an input of a microwave circuitry: The microwave transmission line comprises: a substrate; a strip conductor disposed on a first surface of the substrate, such strip conductor having an input signal pad at one end thereof, and a ground plane disposed on a second, opposite surface of the substrate. The microwave circuitry has capacitive input impedance. The chip includes a via passing from the first surface of the substrate, through the substrate, to the ground plane. A test probe ground pad is disposed on the first surface of the substrate and spaced from a portion of the via disposed on the first surface of the substrate. An electrical conductor is disposed on the first surface of the substrate extending from the portion of the via disposed on the first surface of the substrate via to the test probe ground pad, such electrical conductor providing an inductive impedance selected to provide a resonance with the capacitive input impedance of the microwave circuitry.

7298217, Nov 20, 2007

Dec 1, 2005

11/292847

Michael G Adlerstein - Wellesley MA, US
Valery S. Kaper - Winchester MA, US

Raytheon Company - Waltham MA

H03L 7/00

331 12, 331 77

A phase shifter is fed an input signal having a frequency f. A coupler is included fed by the input signal. The coupler has a pair of output terminals for providing a pair of signals having the frequency f and having a relative phase shift difference of mπ/2 radians, where m is an integer. A switch is included having a pair of inputs, each one of the pair of inputs being coupled to a corresponding one of the pair of output terminals of the coupler. The switch has an output, one of the pair of inputs of the switch being coupled to the output of the switch selectively in accordance with a first control signal fed to the switch. An oscillator is included having a tunable resonant circuit coupled to the output of the switch, such tunable resonant circuit has a nominal resonant frequency which is an integer multiple of the frequency f, the frequency of the resonant circuit being detuned from the nominal resonant frequency in response to a second control signal fed to the tunable resonant circuit to shift the nominal resonant frequency relative to the a harmonic of the signal at the output of the switch.

7387958, Jun 17, 2008

Jul 8, 2005

11/177732

Christopher P. McCarroll - Andover MA, US
Jerome H. Pozgay - Marblehead MA, US
Steven M. Lardizabal - Westford MA, US
Thomas E. Kazior - Sudbury MA, US
Michael G. Adlerstein - Wellesley MA, US

Raytheon Company - Waltham MA

H01L 21/4763

438622, 438151, 257621, 257758, 257778

A method includes providing a single crystal wafer having MMIC chips. Each chip has an active device in a first surface portion of a semiconductor substrate provided by the wafer and an electrical interconnect having a first portion disposed on a second surface of the semiconductor substrate. The semiconductor substrate structure has a via therethrough, a second portion of the electrical interconnect passing though the via and being electrically connected to the active device. A multilayer interconnect structure is formed on the wafer providing a signal routing section on the second surface portion of a corresponding one of the chips. Each section has dielectric layers and an electrical conductor, such electrical conductor being electrically coupled to the active device to route an electrical signal to such active device. Each chip and the corresponding signal routing section are separated from the wafer.

7626218, Dec 1, 2009

Feb 4, 2005

11/051816

Kiuchul Hwang - Amherst NH, US
Michael G Adlerstein - Wellesley MA, US

Raytheon Company - Waltham MA

H01L 29/201
H01L 29/778

257195, 257E21407, 257E27061

A semiconductor structure having: a III-V substrate structure; an enhancement mode transistor device disposed in a first region of the structure; a depletion mode transistor device disposed in a laterally displaced second region of the structure; and a RF/microwave/milli-meter wave transistor device formed in a laterally displaced third region thereof.

7664196, Feb 16, 2010

Nov 8, 2006

11/557633

Michael G Adlerstein - Wellesley MA, US

Raytheon Company - Waltham MA

H04B 7/02

375267, 375376

A circuit having a frequency controllable oscillator and a variable time delay circuit. The time delay circuit is fed by a signal produced by the oscillator, such time delay circuit being coupled to the oscillator to control the frequency of the signal produced by the oscillator. The circuit allows frequency agility of a phase locked loop although locked to a common reference frequency.