Meenakshisundaram S Gandhi

7964441, Jun 21, 2011

Mar 30, 2007

11/693891

Raymond Joe - Austin TX, US
Meenakshisundaram Gandhi - Austin TX, US

Tokyo Electron Limited - Tokyo

H01L 51/40

438 99, 257 40, 257E51024, 257E51027, 257E51046, 427 968

A method is provided for low temperature catalyst-assisted atomic layer deposition of silicon-containing films such as SiOand SiN. The method includes exposing a substrate surface containing X—H functional groups to a first R—X—Rcatalyst and a gas containing silicon and chlorine to form an X/silicon/chlorine complex on the surface, and forming a silicon-X layer terminated with the X—H functional groups by exposing the X/silicon/chlorine complex on the substrate surface to a second R—X—Rcatalyst and a X—H functional group precursor. The method further includes one or more integrated in-situ reactive treatments that reduce or eliminate the need for undesired high-temperature post-deposition processing. One reactive treatment includes hydrogenating unreacted X—H functional groups and removing carbon and chlorine impurities from the substrate surface. Another reactive treatment saturates the silicon-X layer with additional X—H functional groups.

20080035055, Feb 14, 2008

Aug 8, 2006

11/463180

Anthony Dip - Cedar Creek TX, US
Shinji Asari - Austin TX, US
Meenakshisundaram Gandhi - Austin TX, US

TOKYO ELECTRON LIMITED - Tokyo

C23C 16/00

118715, 118725

A thermal processing system with improved gas flow and method for injecting a process gas into a thermal processing system. The thermal processing system has an injection section with injection outlets that inject process gas into a processing space and a delivery section that delivers process gas to the injection section. The delivery section may be coupled with the injection section at an inlet disposed between opposite ends of the injection section. A fluid lumen of the injection section may have a larger cross-sectional area than a fluid lumen of the delivery section. The thermal processing system may include an inner tube, which surrounds the processing space, having a slit through which the processing space communicates with an annular pumping space defined between the inner tube and an outer tube of the thermal processing system.

20130309457, Nov 21, 2013

May 15, 2012

13/472442

Benjamen M. Rathsack - Austin TX, US
Mark H. Somervell - Austin TX, US
Meenakshisundaram Gandhi - Austin TX, US

TOKYO ELECTRON LIMITED - Tokyo

B44C 1/22
B32B 33/00

4281951, 216 49

A method for patterning a layered structure is provided that includes performing photolithography to provide a developed prepattern layer on a horizontal surface of an underlying substrate, modifying the prepattern layer to form spaced apart inorganic material guides, casting and annealing a layer of a self-assembling block copolymer to form laterally-spaced cylindrical features, forming a pattern by selectively removing at least a portion of one block of the self-assembling block copolymer, and transferring the pattern to the underlying substrate. The method is suitable for making sub-50 nm patterned layered structures.