Matthew J Zeleznik

7863714, Jan 4, 2011

Jun 5, 2006

11/446397

Brett M. Diamond - Pittsburgh PA, US
Matthew A. Zeleznik - Pittsburgh PA, US

Akustica, Inc. - Pittsburgh PA

H01L 23/552

257660, 257414, 257499, 438149, 438606

An integrated circuit device includes a semiconductor die, the semiconductor die including a semiconductor substrate, driving/control circuitry disposed along a peripheral region of the semiconductor die, a MEMS device disposed within a central region of the semiconductor die, and a barrier disposed between the driving/control circuitry and the MEMS device.

8094980, Jan 10, 2012

Jan 4, 2010

12/651551

Brett M. Diamond - Monroeville PA, US
Matthew A. Zeleznik - Pittsburgh PA, US
Jan E. Vandemeer - Bethel Park PA, US
Kaigham J. Gabriel - Pittsburgh PA, US

Akustica, Inc. - Pittsburgh PA

G02B 6/42
G02B 26/08

385 18, 3592231, 310309

Provided is a micro-electromechanical-system (MEMS) device including a substrate; at least one semiconductor layer provided on the substrate; a circuit region including at least one chip containing drive/sense circuitry, the circuit region provided on the at least one semiconductor layer; a support structure attached to the substrate; at least one elastic device attached to the support structure; a proof-mass suspended by the at least one elastic device and free to move in at least one of the x-, y-, and z-directions; at least one top electrode provided on the at least one elastic device; and at least one bottom electrode located beneath the at least one elastic device such that an initial capacitance is generated between the at least one top and bottom electrodes, wherein the drive/sense circuitry, proof-mass, supporting structure, and the at least one top and bottom electrodes are fabricated on the at least one semiconductor layer.

8531192, Sep 10, 2013

Apr 15, 2011

13/087625

Matthew A. Zeleznik - Pittsburgh PA, US

Robert Bosch GmbH - Stuttgart

G01R 27/26

324658

The MEMS switch has a high-impedance state and a low-impedance state for biasing a capacitive sensor, and includes an actuation bias terminal, a sense bias terminal, a switch control terminal, a sense node terminal, and a spring. The actuation bias terminal and the sense bias terminal reside in a released region of the switch. The sense bias terminal is physically coupled to the actuation bias terminal by a dielectric which electrically isolates the sense bias terminal from the actuation bias terminal. The switch control terminal is separated from the sense bias terminal by a first air gap, and the sense node terminal is separated from the sense bias terminal by a second air gap. The spring supports the actuation bias terminal, the sense bias terminal, and the dielectric.

20030055360, Mar 20, 2003

Sep 4, 2002

10/233565

Matthew Zeleznik - Pittsburgh PA, US
Kyle Lebouitz - Pittsburgh PA, US
Michele Migliuolo - Pittsburgh PA, US
Kaigham Gabriel - Pittsburgh PA, US
Keith Rebello - Pittsburgh PA, US
Curtis Stone - Pittsburgh PA, US

A61B005/103

600/587000

Apparatus are provided for determining relative and absolute properties of anatomical matter, such as biological tissue including arteries as well as other surgical and medical materials. An illustrative apparatus includes a probe for probing the properties of the anatomical matter. The probe includes a probe shaft having a sense rod, where the sense rod has a proximal end and a distal end, and where the distal end has a probe tip that is configured to contact and probe the anatomical matter. The probe also includes a sensor in mechanical communication with the sense rod, where the sensor is configured to at least measure tissue relative tissue rigidity and/or absolute tissue rigidity, including rigidity of a material on an interior surface of the tissue, a fluid flow rate in an interior of the tissue, a fluid pressure in an interior of the tissue, and/or a viscosity of a fluid in an interior of the tissue. The probe optionally includes a temperature sensor in thermal communication with the probe tip, where the thermal sensor can provide additional data, such as data related to inflammation of the tissue. Methods for probing the rigidity and other physical properties of the anatomical matter are also provided.

20080142914, Jun 19, 2008

Dec 18, 2006

11/640345

Brett M. Diamond - Monroeville PA, US
Matthew A. Zeleznik - Pittsburgh PA, US
Jan E. Vandemeer - Bethel Park PA, US
Kaigham J. Gabriel - Pittsburgh PA, US

H01L 29/84

257415, 257E29324

Provided is a micro-electromechanical-system (MEMS) device including a substrate; at least one semiconductor layer provided on the substrate; a circuit region including at least one chip containing drive/sense circuitry, the circuit region provided on the at least one semiconductor layer; a support structure attached to the substrate; at least one elastic device attached to the support structure; a proof-mass suspended by the at least one elastic device and free to move in at least one of the x-, y-, and z-directions; at least one top electrode provided on the at least one elastic device; and at least one bottom electrode located beneath the at least one elastic device such that an initial capacitance is generated between the at least one top and bottom electrodes, wherein the drive/sense circuitry, proof-mass, supporting structure, and the at least one top and bottom electrodes are fabricated on the at least one semiconductor layer.

20170355594, Dec 14, 2017

Aug 16, 2017

15/678398

Matthew A. Zeleznik - Pittsburgh PA, US

B81B 7/00
B81C 1/00
H01L 21/48
H01L 23/495
H01L 23/498
H04R 19/04
H04R 31/00
H04R 19/00

A method of detecting defects in a high impedance network of a MEMs microphone sensor interface circuit. The method includes adding a high-voltage reset switch to a high-voltage high impedance network, closing the high-voltage reset switch during a start-up phase of the MEMs microphone sensor interface circuit, simultaneously closing a low-voltage reset switch of a low-voltage high impedance network during the start-up phase, simultaneously opening the high-voltage reset switch and the low-voltage reset switch at the end of the start-up phase, and detecting a defect in the high-voltage high impedance network or the low-voltage high impedance network immediately after opening the high-voltage reset switch and the low-voltage reset switch.

20160073212, Mar 10, 2016

Sep 10, 2015

14/850317

- Stuttgart, DE
Matthew A. Zeleznik - Pittsburgh PA, US

H04R 29/00
G01R 31/02
H04R 3/00
H04R 19/04
H04R 19/00

A method of detecting defects in a high impedance network of a MEMs microphone sensor interface circuit. The method includes adding a high-voltage reset switch to a high-voltage high impedance network, closing the high-voltage reset switch during a start-up phase of the MEMs microphone sensor interface circuit, simultaneously closing a low-voltage reset switch of a low-voltage high impedance network during the start-up phase, simultaneously opening the high-voltage reset switch and the low-voltage reset switch at the end of the start-up phase, and detecting a defect in the high-voltage high impedance network or the low-voltage high impedance network immediately after opening the high-voltage reset switch and the low-voltage reset switch.

20140270204, Sep 18, 2014

Nov 21, 2013

14/086351

- Stuttgart, DE
Matthew A. Zeleznik - Pittsburgh PA, US

Robert Bosch GmbH - Stuttgart

H04R 29/00
H04R 3/00

381 58

A method of initiating a reset sequence for a MEMS capacitive microphone. The method includes monitoring an output of a microphone and detecting a mute condition in the output of the microphone indicative of a fault condition. The method also includes activating a timing circuit. The timing circuit is configured to indicate when a certain time period since the initiation of the timing circuit has elapsed. Upon expiration of the time period indicated by the timing circuit, a microphone reset sequence is initiated.