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Matthew P Lumb

from Arlington, VA
Age ~41
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Connected to:
Dominica Lumb, 62Eileen W Lumb, 67Hayley Lumb, 37Kevin W Lumb, 69Lorraine M Lumb, 67Paula Lumb, 71Robert L Lumb, 52Robin T Lumb, 70Suzanne H Lumb, 38Thomas F Lumb, 57

Matthew Lumb Phones & Addresses

  • Arlington, VA
  • Alexandria, VA
  • Washington, DC

Publications

Us Patents

Multijunction Solar Cells Lattice Matched To Inp Using Sb-Containing Alloys

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US Patent:
20130048063, Feb 28, 2013
Filed:
Aug 23, 2012
Appl. No.:
13/592524
Inventors:
Robert J. Walters - Alexandria VA, US
Phillip Jenkins - Washington DC, US
Maria Gonzalez - Washington DC, US
Igor Vurgaftman - Odenton MD, US
Jerry R. Meyer - Catonsville MD, US
Joshua Abell - University Park MD, US
Matthew P. Lumb - Alexandria VA, US
Michael K. Yakes - Alexandria VA, US
Joseph G. Tischler - Alexandria VA, US
Cory Cress - Alexandria VA, US
Nicholas Ekins-Daukes - Newbury, GB
Paul Stavrinou - London, GB
Jessica Adams - Chicago IL, US
Ngai Chan - London, GB
Assignee:
The Government of the United States of America, as represented by the Secretary of the Navy - Washington DC
International Classification:
H01L 31/0725
G06F 17/50
US Classification:
136255, 716110
Abstract:
A multijunction (MJ) solar cell grown on an InP substrate using materials that are lattice-matched to InP. In an exemplary three-junction embodiment, the top cell is formed from InAlAsSb(with x and y adjusted so as to achieve lattice-matching with InP, hereafter referred to as InAlAsSb), the middle cell from InGaAlAs (with a and b adjusted so as to achieve lattice-matching with InP, hereafter referred to as InGaAlAs), and the bottom cell also from InGaAlAs, but with a much lower Al composition, which in some embodiments can be zero so that the material is InGaAs. Tunnel junctions (TJs) connect the junctions and allow photo-generated current to flow. In an exemplary embodiment, an InAlAsSb TJ connects the first and second junctions, while an InGaAlAs TJ connects the second and third junctions.

Efficient Monolithic Optocoupler Device

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US Patent:
20210397209, Dec 23, 2021
Filed:
Sep 3, 2021
Appl. No.:
17/466168
Inventors:
- Washington DC, US
Matthew LUMB - Alexandria VA, US
International Classification:
G05F 1/575
H01L 31/173
Abstract:
An efficient monolithic optocoupler device that includes a photovoltaic region, an electrically isolating region, and a light emitting region deposited on a substrate in a single stack. The electrically isolating region (e.g., one or more diodes or resistive semiconductor layers) allows photons to pass from the light emitting region to the photovoltaic region while blocking electrical current between those regions. In some embodiments, the optocoupler device includes a reflector on a side of the light emitting region (opposite the photovoltaic region) that reflects photons emitted by the light emitting region back toward the photovoltaic region. The optocoupler device may also include a reflector on a side of the photovoltaic region (opposite the light emitting region) that reflects photons emitted by the light emitting region back toward the photovoltaic region. In other embodiments, the optocoupler device includes two photovoltaic regions sandwiching the light emitting region.

Linear Voltage Regulator Circuit Incorporating Light Emitting And Photovoltaic Devices

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US Patent:
20200081472, Mar 12, 2020
Filed:
Sep 6, 2019
Appl. No.:
16/563463
Inventors:
- Washington DC, US
Matthew LUMB - Alexandria VA, US
International Classification:
G05F 1/575
H01L 31/173
Abstract:
A linear regulator operates in the manner of a linear voltage regulator, but with the functionality of a switching converter. This concept enables DC voltage up-conversion with no switching, more efficient step down of large voltage steps, and requires no expensive and bulky additional components. An optocoupler device transfers power between light emitting and photovoltaic devices.

Multijunction Solar Cells Lattice Matched To Inp Using Sb-Containing Alloys

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US Patent:
20150325720, Nov 12, 2015
Filed:
Jun 16, 2015
Appl. No.:
14/740348
Inventors:
Robert J. Walters - Alexandria VA, US
Phillip Jenkins - Washington DC, US
Maria Gonzalez - Washington DC, US
Igor Vurgaftman - Severna Park MD, US
Jerry R. Meyer - Catonsville MD, US
Joshua Abell - University Park MD, US
Nicholas Ekins-Daukes - Newbury, GB
Jessica Adams - Chicago IL, US
Paul Stavrinou - London, GB
Michael K. Yakes - Alexandria VA, US
Joseph G. Tischler - Alexandria VA, US
Cory D. Cress - Alexandria VA, US
Matthew P. Lumb - Alexandria VA, US
Ngai Chan - London, GB
Assignee:
The Government of the United States of America, as represented by the Secretary of the Navy - Washington DC
International Classification:
H01L 31/0304
H01L 31/036
Abstract:
A multijunction (MJ) solar cell grown on an InP substrate using materials that are lattice-matched to InP. In an exemplary three-junction embodiment, the top cell is formed from InAlAsSb(with x and y adjusted so as to achieve lattice-matching with InP, hereafter referred to as InAlAsSb), the middle cell from InGaAlAs (with a and b adjusted so as to achieve lattice-matching with InP, hereafter referred to as InGaAlAs), and the bottom cell also from InGaAlAs, but with a much lower Al composition, which in some embodiments can be zero so that the material is InGaAs. Tunnel junctions (TJs) connect the junctions and allow photo-generated current to flow. In an exemplary embodiment, an InAlAsSb TJ connects the first and second junctions, while an InGaAlAs TJ connects the second and third junctions.

Tunnel Diodes Incorporating Strain-Balanced, Quantum-Confined Heterostructures

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US Patent:
20140252312, Sep 11, 2014
Filed:
Mar 6, 2014
Appl. No.:
14/198735
Inventors:
Matthew Lumb - Alexandria VA, US
Michael K. Yakes - Alexandria VA, US
Marla González - Washington DC, US
Christopher Bailey - Washington DC, US
Robert J. Walters - Alexandria VA, US
Assignee:
The Government of the United States of America, as represented by the Secretary of the Navy - Washington DC
International Classification:
H01L 29/15
US Classification:
257 14
Abstract:
A strain-balanced quantum well tunnel junction (SB-QWTJ) device. QW structures are formed from alternating quantum well and barrier layers situated between n and p layers in a tunnel junction formed on a substrate. The quantum well layers exhibit a compressive strain with respect to the substrate, while the barrier layers exhibit a tensile strain. The composition and layer thicknesses of the quantum well and barrier layers are configured so that the compressive and tensile strains in the structure are balanced.
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Matthew P Lumb from Arlington, VA, age ~41 Get Report