Matthew C Lassiter from 2017 Brandeis Dr, Richardson, TX 75082, age 38, Phone: (214) 636-1664

Resumes

Part Owner

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Location:

Richardson, TX

Industry:

Accounting

Work:

Lassiter Cpa Pc
Part Owner
Daniel L Lassiter Jr Cpa Jan 2015 - Dec 2016
Accountant
Daniel L Lassiter Jr Cpa 2012 - Dec 2014
Accounting Clerk
Matt Lassiter's Consulting May 2012 - Dec 2014
Financial and Accounting Contractor
Huntington Learning Center Jan 2012 - Jun 2012
Math Tutor

Education:

Keller Graduate School of Management of Devry University 2013 - 2014
Master of Business Administration, Masters, Business Administration, Accounting Texas State University 2008 - 2011
Bachelors, Bachelor of Science, Mathematics The University of Texas at Dallas 2004 - 2007

Skills:

Microsoft Excel
Microsoft Word
Quickbooks
Bank Reconciliation
Troubleshooting
Microsoft Office
Easyacct
Quarterly Reporting
Mathematics Education
Outlook
Accounts Payable
Accounting
Payroll
Finance
Forecasting
Financial Analysis
Process Improvement
Customer Service
Powerpoint
Leadership
Business Process Improvement
Microsoft Outlook

Interests:

Poverty Alleviation
Science and Technology
Education
Arts and Culture

Skilled Labor

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Work:

Rs Constrution
Skilled Labor

Matthew Lassiter

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Matthew Lassiter

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Location:

United States

Matthew Lassiter Richardson, TX

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Work:

Huntington Learning Center
McKinney, TX
Jan 2012 to Jun 2012
Tutor- SAT Preparation
Little Elm High School
Little Elm, TX
Feb 2012 to May 2012
San Marcos High School
San Marcos, TX
Jan 2011 to Dec 2011
Student Teacher/Intern- Pre AP Geometry, Geometry, Algebra
American Automation Technologies
Denton, TX
Jan 2006 to Dec 2010
Tech-Support Specialist
American Automation Technologies
Irving, TX
2007 to 2008
Assistant Network Administrator
Accounting ClerkRichardson, TX
2007 to 2007

Education:

TEXAS STATE UNIVERSITY
San Marcos, TX
Dec 2011
Bachelor of Science in Mathematics

Publications

Us Patents

Photomask Having An Internal Substantially Transparent Etch Stop Layer

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US Patent:

7049034, May 23, 2006

Filed:

Sep 9, 2003

Appl. No.:

10/658039

Inventors:

Patrick M. Martin - Dallas TX, US
Matthew Lassiter - Allen TX, US
Darren Taylor - Allen TX, US
Michael Cangemi - McKinney TX, US
Eric Poortinga - Allen TX, US

Assignee:

Photronics, Inc. - Brookfield CT

International Classification:

G01F 9/00

US Classification:

430 5

Abstract:

The present invention generally relates, to optical lithography and more particularly relates to the fabrication of transparent or semitransparent phase shifting masks used in the manufacture of semiconductor devices. In particular, the present invention utilizes an internal etch stop layer and either a deposited substantially transparent layer, deposited partially transparent layer or deposited opaque thereon in an otherwise conventional photomask. The photomask of the present invention is used to make semiconductor devices or integrated circuits. In a preferred embodiment of the present invention is directed to an aaPSM comprising: a patterned opaque layer with a first set of at least one light transmitting openings and a second set of at least one light transmitting openings; a deposited substantially transparent layer underlying the opaque layer wherein the deposited substantially transparent layer has corresponding light transmitting openings to each of the openings of the first set of at least one light transmitting openings, a substantially transparent etch stop layer underlying the deposited substantially transparent layer, and a substantially transparent substrate underlying the transparent etch stop layer. In a preferred embodiment, the internal substantially transparent etch stop layer of the present invention is comprised of MgFand even more particularly may be comprised of MgFdeposited under evaporation. Other materials that may be used for the substantially transparent etch stop layer of the present invention include but are not limited to AlOand AlN.

Photomask Having An Intermediate Inspection Film Layer

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US Patent:

20040043303, Mar 4, 2004

Filed:

Aug 27, 2002

Appl. No.:

10/229830

Inventors:

Matthew Lassiter - McKinney TX, US
Michael Cangemi - McKinney TX, US

International Classification:

G03F001/08
G03F007/11
G03F007/20
G03F007/40

US Classification:

430/005000, 430/271100, 430/275100, 430/313000

Abstract:

The present invention relates generally to improved photomask blanks used in photolithography for the manufacture of integrated circuits and other semiconductor devices, and more specifically, to the detection of defects in such photomasks after processing. In particular, the present invention is directed to a photomask blank having one or more intermediate layers made from materials having a higher extinction coefficient at the inspection tool wavelength than exposure tool wavelengths. The intermediate layer(s) are made from materials that absorb a sufficient amount of light to meet the optical requirements of inspection tools while at the same time transmit a sufficient amount of light to meet the optical requirements of exposure tools. As a result, the photomask improves inspection results of a photomask without sacrificing transmission properties during the semiconductor writing process.

Photomask Having An Internal Substantially Transparent Etch Stop Layer

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US Patent:

20050026053, Feb 3, 2005

Filed:

Sep 8, 2004

Appl. No.:

10/936026

Inventors:

Patrick Martin - Dallas TX, US
Matthew Lassiter - McKinney TX, US
Darren Taylor - The Colony TX, US
Michael Cangemi - McKinney TX, US
Eric Poortinga - Austin TX, US

International Classification:

B32B009/00
B32B015/00
B32B017/06
G03F009/00

US Classification:

430005000, 428428000, 428432000

Abstract:

The present invention generally relates to optical lithography and more particularly relates to the fabrication of transparent or semitransparent phase shifting masks used in the manufacture of semiconductor devices. In particular, the present invention utilizes an internal etch stop layer and either a deposited substantially transparent layer, deposited partially transparent layer or deposited opaque thereon in an otherwise conventional photomask. The photomask of the present invention is used to make semiconductor devices or integrated circuits. In a preferred embodiment of the present invention is directed to an aaPSM comprising: a patterned opaque layer with a first set of at least one light transmitting openings and a second set of at least one light transmitting openings; a deposited substantially transparent layer underlying the opaque layer wherein the deposited substantially transparent layer has corresponding light transmitting openings to each of the openings of the first set of at least one light transmitting openings, a substantially transparent etch stop layer underlying the deposited substantially transparent layer, and a substantially transparent substrate underlying the transparent etch stop layer. In a preferred embodiment, the internal substantially transparent etch stop layer of the present invention is comprised of MgFand even more particularly may be comprised of MgFdeposited under evaporation. Other materials that may be used for the substantially transparent etch stop layer of the present invention include but are not limited to AlOand AlN.