Matthew W Copel

6444592, Sep 3, 2002

Jun 20, 2000

09/597765

Arne W. Ballantine - Round Lake NY
Douglas A. Buchanan - Cortlandt Manor NY
Eduard A. Cartier - New York NY
Kevin K. Chan - Staten Island NY
Matthew W. Copel - Yorktown Heights NY
Christopher P. DEmic - Ossining NY
Evgeni P. Gousev - Mahopac NY
Fenton Read McFeely - Ossining NY
Joseph S. Newbury - Tarrytown NY
Patrick R. Varekamp - Croton-on-Hudson NY
Theodore H. Zabel - Yorktown Heights NY

International Business Machines Corporation - Armonk NY

H01L 21469

438770

A method for integrating a high-k material into CMOS processing schemes is provided. The method includes forming an interfacial oxide, oxynitride and/or nitride layer on a device region of a semiconductor substrate, said interfacial layer having a thickness of less than 10 ; and (b) forming a high-k dielectric material on said interfacial oxide, oxynitride and/or, nitride layer, said high-k dielectric having a dielectric constant, k, of greater than 8.

6566281, May 20, 2003

Dec 1, 1997

08/982150

Douglas Andrew Buchanan - Cortlandt Manor NY
Matthew Warren Copel - Yorktown Heights NY
Fenton Read McFeely - Ossining NY
Patrick Ronald Varekamp - Croton-on-Hudson NY
Mark Monroe Banaszak Holl - Ann Arbor MI
Kyle Erik Litz - Ann Arbor MI

International Business Machines Corporation - Armonk NY

H01L 2131

438786, 438624, 438778, 438787, 438791

The present invention discloses a method for forming a layer of nitrogen and silicon containing material on a substrate by first providing a heated substrate and then flowing a gas which has silicon and nitrogen atoms but no carbon atoms in the same molecule over said heated substrate at a pressure of not higher than 500 Torr, such that a layer of nitrogen and silicon containing material is formed on the surface. The present invention is further directed to a composite structure that includes a substrate and a layer of material containing nitrogen and silicon but not carbon overlying the substrate for stopping chemical species from reaching the substrate. The present invention is further directed to a structure that includes a semiconducting substrate, a gate insulator on the substrate, a nitrogen-rich layer on top of the gate insulator, and a gate electrode on the nitrogen-rich layer, wherein the nitrogen-rich layer blocks diffusion of contaminating species from the gate electrode to the gate insulator.

6527856, Mar 4, 2003

Feb 22, 2001

09/792040

David W. Abraham - Croton-on-Hudson NY
Matthew Copel - Yorktown Heights NY
James Misewich - Peekskill NY
Alejandro G. Schrott - New York NY
Ying Zhang - Yorktown Heights NY

International Business Machines Corporation - Armonk NY

C30B 2502

117 97, 117 1, 117 2, 117105, 4233282

A method for changing the surface termination of a perovskite substrate surface, an example of which is the conversion of B-site terminations of a single-crystal STO substrate to A-site terminations. The method generally comprises the steps of etching the substrate surface by applying a reactive plasma thereto in the presence of fluorine or another halogen, and then annealing the substrate at a temperature sufficient to regenerate a long range order of the surface, i. e. , the surface termination contributes to a better long range order in a film epitaxially grown on the surface. More particularly, the resulting substrate surfaces predominantly contains A-site surface terminations, i. e. , SrO for STO (100) substrates. As a result, disadvantages associated with B-site terminated perovskite substrate surfaces are avoided. A suitable etching treatment is a low power oxygen ashing in the presence of low halogen levels.

6528374, Mar 4, 2003

Feb 5, 2001

09/777094

Eduard A. Cartier - New York NY
Matthew W. Copel - Yorktown Heights NY
Supratik Guha - Chappaqua NY

International Business Machines Corporation - Armonk NY

H01L 20336

438299, 438204, 438287, 438404, 438624

A method of forming a dielectric stack device having a plurality of layers comprises the steps of providing a silicon substrate, forming a metal-oxide layer on a silicon oxide layer which is formed on the silicon substrate, and performing an annealing with respect to the metal-oxide layer and the silicon oxide layer until a silicate layer is formed to replace the metal-oxide layer and the silicon oxide layer is removed, wherein the annealing is performed at a temperature between about 800Â C. and about 1000Â C. for a time period between about 1 second and about 10 minutes. After forming the silicon oxide layer on the silicon substrate, the metal-oxide layer may be deposited on the silicon oxide layer. Alternatively, the metal-oxide layer may be deposited on the silicon substrate, and the silicon oxide layer grows between the metal-oxide layer and the silicon substrate. The metal-based oxide is preferably an Yttrium-based oxide.

6735556, May 11, 2004

Jun 15, 2001

09/883065

Matthew W. Copel - Yorktown Heights NY

International Business Machines Corporation - Armonk NY

G06F 1750

703 2, 703 5, 345420, 716 20

A method, computer readable medium and a structure for real-time simulation, which allows the user to manipulate model parameters and see the simulated result in real-time as the model is changed. The simulated result is visually compared with the data, allowing the user to refine the model. In one embodiment, the invention is used for evaluating medium energy ion scattering (MEIS) data, as well as conventional Rutherford backscattering data. It is important to realize that the invention is not limited to ion beam analysis, or to scientific data analysis. The invention can be used for evaluating any type of complex system where a well-defined simulation procedure exists. The model evaluation must proceed quickly enough to provide a real-time, visual display for the user.

6753556, Jun 22, 2004

Oct 6, 1999

09/413462

Eduard Albert Cartier - New York NY
Matthew Warren Copel - Yorktown Heights NY
Frances Mary Ross - Stamford CT

International Business Machines Corporation - Armonk NY

H01L 2348

257213, 257381, 257388, 438142

A method of forming a silicate dielectric having superior electrical properties comprising forming a metal oxide layer on a Si-containing semiconductor material and reacting the metal oxide with the underlying Si-containing material in the presence of an oxidizing gas is provided. Semiconductor structures comprising the metal silicate formed over a SiO layer are also disclosed herein.

6756646, Jun 29, 2004

May 22, 2001

09/862372

Douglas Andrew Buchanan - Cortlandt Manor NY
Matthew Warren Copel - Yorktown Heights NY
Patrick Ronald Varekamp - Croton-on-Hudson NY

International Business Machines Corporation - Armonk NY

H01L 31062

257410, 257411, 257412, 257413

A method for forming an oxynitride gate dielectric in a semiconductor device and gate dielectric structure formed by the method are disclosed. In the method, an oxynitride layer is first formed on a silicon surface and then re-oxidized with a gas mixture containing oxygen and at least one halogenated species such that an oxynitride layer with a controlled nitrogen profile and a layer of substantially silicon dioxide formed underneath the oxynitride film is obtained. The oxynitride film layer can be formed by either contacting a surface of silicon with at least one gas that contains. nitrogen and/or oxygen at a temperature of not less than 500Â C. or by a chemical vapor deposition technique. The re-oxidation process may be carried out by a thermal process in an oxidizing halogenated atmosphere containing oxygen and a halogenated species such as HCl, CH Cl , C H Cl , C H Cl. CH Cl and CHCl.

6861728, Mar 1, 2005

Dec 20, 2002

10/326635

Eduard A. Cartier - New York NY, US
Matthew W. Copel - Yorktown Heights NY, US
Supratik Guha - Chappaqua NY, US

International Business Machines Corporation - Armonk NY

H01L029/00

257532, 257528, 257295

A method of forming a dielectric stack device having a plurality of layers comprises the steps of providing a silicon substrate, forming a metal-oxide layer on a silicon oxide layer which is formed on the silicon substrate, and performing an annealing with respect to the metal-oxide layer and the silicon oxide layer until a silicate layer is formed to replace the metal-oxide layer and the silicon oxide layer is removed, wherein the annealing is performed at a temperature between about 800 C. and about 1000 C. for a time period between about 1 second and about 10 minutes. After forming the silicon oxide layer on the silicon substrate, the metal-oxide layer may be deposited on the silicon oxide layer. Alternatively, the metal-oxide layer may be deposited on the silicon substrate, and the silicon oxide layer grows between the metal-oxide layer and the silicon substrate. The metal-based oxide is preferably an Yttrium-based oxide.