Inventors:
Janos Farkas - Austin TX
Rahul Jairath - Austin TX
Matt Stell - Folsom CA
Assignee:
Sematech, Inc. - Austin TX
Intel Corporation - Santa Clara CA
National Semiconductor Corp. - Santa Clara CA
Digital Equipment Corp. - Maynard MA
International Classification:
H01L 21302
Abstract:
A method of using additives with silica-based slurries to enhance metal selectivity in polishing metallic materials utilizing a chemical-mechanical polishing (CMP) process. Additives are used with silica-based slurries to passivate a dielectric surface, such as a silicon dioxide (SiO. sub. 2) surface, of a semiconductor wafer so that dielectric removal rate is reduced when CMP is applied. The additive is comprised of at least a polar component and an apolar component. The additive interacts with the surface silanol group of the SiO. sub. 2 surface to inhibit particles of the silica-based slurry from interacting with hydroxyl molecules of the surface silanol group. By applying a surface passivation layer on the SiO. sub. 2 surface, erosion of the SiO. sub. 2 surface is reduced.
