Inventors:
Ming Yang - Richardson TX
Masahiro Kaida - Plano TX
Tom Lassister - Garland TX
Fred D. Fishburn - Richardson TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 21306
H01L 213065
B44C 122
Abstract:
A method for etching a semiconductor device (10) having BARC layer (22) and nitride layer (20) includes etching BARC layer (22) until reaching a first set point in the fabrication reaction chamber and then etching nitride layer (20) in-situ the fabrication reaction chamber immediately following etching BARC layer (22).