Resumes
Resumes
Martin Mogaard Phones & Addresses
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12 Coopers Hawk Ct, Scotts Valley, CA 95066 (831) 439-1724
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600 Laurel Glen Rd, Soquel, CA 95073 (831) 475-3039
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12 Coopers Hawk Ct, Scotts Valley, CA 95066
Work
Position:
Protective Service Occupations
Education
Degree:
Associate degree or higher
Emails
Publications
Us Patents
Thermal Processing System With Cross-Flow Liner
View pageUS Patent:
20050098107, May 12, 2005
Filed:
Sep 21, 2004
Appl. No.:
10/947426
Inventors:
Dale Du Bois - Los Gatos CA, US
Cole Porter - San Jose CA, US
Martin Mogaard - Scotts Valley CA, US
Robert Bailey - Scotts Valley CA, US
Cole Porter - San Jose CA, US
Martin Mogaard - Scotts Valley CA, US
Robert Bailey - Scotts Valley CA, US
International Classification:
C23C016/00
US Classification:
118715000
Abstract:
An apparatus is provided for thermally processing substrates held in a carrier. The apparatus includes a cross-flow liner to improve gas flow uniformity across the surface of each substrate. The cross-flow liner of the present invention includes a longitudinal bulging section to accommodate a cross-flow injection system. The liner is patterned and sized so that it is conformal to the wafer carrier, and as a result, reduces the gap between the liner and the wafer carrier to reduce or eliminate vortices and stagnation in the gap areas between the wafer carrier and the liner inner wall.
Uniform Batch Film Deposition Process And Films So Produced
View pageUS Patent:
20070010072, Jan 11, 2007
Filed:
Jul 7, 2006
Appl. No.:
11/482887
Inventors:
Robert Bailey - Santa Cruz CA, US
Taiqing Qiu - Los Gatos CA, US
Cole Porter - San Jose CA, US
Olivier Laparra - San Jose CA, US
Robert Chatham - Scotts Valley CA, US
Martin Mogaard - Scotts Valley CA, US
Helmuth Treichel - Milpitas CA, US
Taiqing Qiu - Los Gatos CA, US
Cole Porter - San Jose CA, US
Olivier Laparra - San Jose CA, US
Robert Chatham - Scotts Valley CA, US
Martin Mogaard - Scotts Valley CA, US
Helmuth Treichel - Milpitas CA, US
Assignee:
Aviza Technology, Inc. - Scotts Valley CA
International Classification:
H01L 21/20
US Classification:
438478000
Abstract:
A batch of wafer substrates is provided with each wafer substrate having a surface. Each surface is coated with a layer of material applied simultaneously to the surface of each of the batch of wafer substrates. The layer of material is applied to a thickness that varies less than four thickness percent across the surface and exclusive of an edge boundary and having a wafer-to-wafer thickness variation of less than three percent. The layer of material so applied is a silicon oxide, silicon nitride or silicon oxynitride with the layer of material being devoid of carbon and chlorine. Formation of silicon oxide or a silicon oxynitride requires the inclusion of a co-reactant. Silicon nitride is also formed with the inclusion of a nitrification co-reactant. A process for forming such a batch of wafer substrates involves feeding the precursor into a reactor containing a batch of wafer substrates and reacting the precursor at a wafer substrate temperature, total pressure, and precursor flow rate sufficient to create such a layer of material. The delivery of a precursor and co-reactant as needed through vertical tube injectors having multiple orifices with at least one orifice in registry with each of the batch of wafer substrates and exit slits within the reactor to create flow across the surface of each of the wafer substrates in the batch provides the within-wafer and wafer-to-wafer uniformity.
Layer Transfer For Large Area Inorganic Foils
View pageUS Patent:
20090208725, Aug 20, 2009
Filed:
Jan 23, 2009
Appl. No.:
12/359019
Inventors:
Robert J. Bailey - Scotts Valley CA, US
William A. Sanders - Palo Alto CA, US
Ronald J. Mosso - Fremont CA, US
Henry Hieslmair - San Francisco CA, US
Julio E. Morris - Fremont CA, US
Martin E. Mogaard - Scotts Valley CA, US
Jacob A. Hernandez - Morgan Hill CA, US
William A. Sanders - Palo Alto CA, US
Ronald J. Mosso - Fremont CA, US
Henry Hieslmair - San Francisco CA, US
Julio E. Morris - Fremont CA, US
Martin E. Mogaard - Scotts Valley CA, US
Jacob A. Hernandez - Morgan Hill CA, US
International Classification:
B32B 5/18
B05D 1/12
C23C 16/00
B29C 65/78
B05D 1/12
C23C 16/00
B29C 65/78
US Classification:
4283122, 427203, 42725528, 156538, 156344
Abstract:
Layer transfer approaches are described to take advantage of large area, thin inorganic foils formed onto a porous release layer. In particular, since the inorganic foils can be formed from ceramics and/or crystalline materials that do not bend a large amount, approaches are described to provide for gradual pulling along an edge to separate the foil from a holding surface along a curved surface designed to not excessively bend the foil such that the foil is not substantially damaged in the transfer process. Apparatuses are described to perform the transfer with a rocking motion or with a rotating cylindrical surface. Furthermore, stabilization of porous release layers can improve the qualities of resulting inorganic foils formed on the release layer. In particular, flame treatments can provide improved release layer properties, and the deposition of an interpenetrating stabilization composition can be deposited using CVD to stabilize a porous layer.
Oxide-Containing Film Formed From Silicon
View pageUS Patent:
20100117203, May 13, 2010
Filed:
Jan 30, 2007
Appl. No.:
11/668626
Inventors:
Robert Jeffrey Bailey - Scotts Valley CA, US
Hood Chatham - Scotts Valley CA, US
Derrick Foster - Scottsdale AZ, US
Olivier Laparra - San Jose CA, US
Martin Mogaard - Scotts Valley CA, US
Cole Porter - San Jose CA, US
Helmuth Treichel - Milpitas CA, US
Hood Chatham - Scotts Valley CA, US
Derrick Foster - Scottsdale AZ, US
Olivier Laparra - San Jose CA, US
Martin Mogaard - Scotts Valley CA, US
Cole Porter - San Jose CA, US
Helmuth Treichel - Milpitas CA, US
Assignee:
Aviza Technology, Inc. - Scotts Valley CA
International Classification:
H01L 29/04
H01L 21/316
H01L 21/26
H01L 21/314
H01L 21/316
H01L 21/26
H01L 21/314
US Classification:
257627, 438770, 438771, 438762, 257E29004, 257E21283, 257E21328, 257E21267
Abstract:
A process for forming an oxide-containing film from silicon is provided that includes heating the silicon substrates to a process temperature of between 250 C. and 1100 C. with admission into the process chamber of diatomic reductant source gas Z-Z′ where Z and Z′ are each H, D and T and a stable source of oxide ion. Multiple exhaust ports exist along the vertical extent of the process chamber to create reactant across flow. A batch of silicon substrates is provided having multiple silicon base layers, each of the silicon base layers having exposed and planes and a film residual stress associated with the film being formed at a temperature of less than 600 C. and having a film thickness that exceeds a film thickness on the crystallographic plane by less than 20%, or a film characterized by thickness anisotropy less than 18% and an electrical breakdown field of greater than 10.5 MV/cm.
Oxide Structure Useable For Optical Waveguide And Method Of Forming The Oxide Structure
View pageUS Patent:
20030044154, Mar 6, 2003
Filed:
Aug 2, 2002
Appl. No.:
10/210978
Inventors:
Martin Mogaard - Scotts Valley CA, US
International Classification:
G02B006/10
C03B037/022
C03B037/022
US Classification:
385/129000, 065/386000, 385/132000
Abstract:
A method of forming an oxide structure and an oxide structure formed by the method. In one embodiment a lower cladding layer on a substrate is provided. At least one core layer is formed on lower cladding layer, the core layer includes boron at a concentration that produces substantially zero internal stress of said core layer. At least one upper cladding layer is formed on the core layer wherein at least one of the upper and lower cladding layers include germanium at a concentration level such that the upper and lower cladding layers exhibit substantially equivalent refractive indices.