Martin D Feldman

50182366, May 28, 1991

Apr 19, 1990

7/511258

Martin Feldman - Long Beach NY

B05C 1702

1523011

A roller-type paint applicator includes a housing that is held in the palm of a user's hand and has wings that protect the hands and fingers of the user from paint. A roller is supported in the housing.

42207541, Sep 2, 1980

May 25, 1976

5/690202

Martin L. Feldman - East Brunswick NJ

Tenneco Chemicals, Inc. - Saddle Brook NJ

C08F 624
C08F 614
C08F 806

528483

The discoloration of polyvinyl chloride that usually occurs when a slurry containing this polymer is heated at a temperature above 70. degree. C. to reduce its monomer content to less than 10 ppm is minimized or prevented by carrying out the heating step in the presence of an oxidizing agent.

42631980, Apr 21, 1981

Jun 1, 1979

6/044725

Martin L. Feldman - East Brunswick NJ
James T. De Groff - Oldwick NJ

Tenneco Chemicals, Inc. - Saddle Brook NJ

C09K 320
C09L 6706

260 40R

A thickening agent for unsaturated polyester resin compositions comprises (a) 25% to 70% by weight of a Group II-A metal oxide or hydroxide and (b) 30% to 75% by weight of an unsaturated polyester vehicle comprising (1) 50% to 100% by weight of an unsaturated polyester that is the product of the reaction of a dicarboxylic acid component that contains at least one unsaturated aliphatic dicarboxylic acid and at least one saturated aromatic dicarboxylic acid with an alcohol component that contains at least one glycol and at least one monohydric alcohol and (2) 0-50% by weight of an unsaturated monomer capable of reacting with the unsaturated polymer to form cross-linkages.

46144331, Sep 30, 1986

Jul 9, 1984

6/629056

Martin Feldman - Berkeley Heights NJ
Peter A. Heimann - Clifton NJ
William A. Johnson - Fanwood NJ
Theodore F. Retajczyk - Clinton NJ
Donald L. White - Bernardsville NJ

AT&T Bell Laboratories - Murray Hill NJ

G01B 1127

356401

Mask-to-wafer alignment in X-ray lithography is advantageously carried out utilizing zone plate marks formed on the mask and wafer. In practice, it has been observed that the intensity and in some cases even the location of the centroid of the light spot formed by a zone plate mask can vary during alignment as the mask-to-wafer spacing is changed. The present invention is based on the discovery and analysis of the causes of such variations. Based thereon, applicants have devised a modified mask structure which, when used with a wafer in a zone plate alignment system, enables mask-to-wafer alignment to be made more easily and more reliably than was possible heretofore. The modified mask structure includes a localized blocking layer over each zone plate on the mask. This layer allows only a negligible portion of the light employed to illuminate the zone plates on the mask to propagate into the mask-to-wafer space. Also, the modified mask structure includes an antireflection layer that reduces interference effects between light spots imaged by the wafer zone plates and light reflected from the mask.

50251651, Jun 18, 1991

Mar 26, 1990

7/499153

Chin-Chin Chen - Scotch Plains NJ
Martin Feldman - Baton Rouge LA
Herbert A. Waggener - Pottersville NJ

AT&T Bell Laboratories - Murray Hill NJ

H01J 3720

2504911

Conventional alignment procedures in electron beam (e-beam) direct write systems typically use an e-beam exposure tool as a scanning electron microscope (SEM) to imagine wafer alignment marks. However, electrical charging of the wafer surface by the electron beam can typically result in image distortions which generally can lead to alignment inaccuracies. The inventive method and apparatus advantageously overcome the alignment inaccuracies associated with the charging effects, by optically aligning the wafer to a reference axis of the electron beam. In a preferred embodiment of this invention, light is focused on a diffraction grating on the wafer, used as an alignment mark, and the diffracted light is spatially filtered and detected. Spatially filtering the diffracted light, eliminating the 0th order of the diffracted light, provides increased depth of focus. Also in this particular embodiment, travel of the wafer stage for optical alignment remains below the electron lens column by mounting an optical head (used for directing light onto the wafer, for spatially filtering the diffracted light, and for directing the spatially filtered light to the detection means) to the pole tip of the electron lens column.

43268056, Apr 27, 1982

Apr 11, 1980

6/139544

Martin Feldman - New Providence NJ
Alan D. White - Berkeley Heights NJ
Donald L. White - Bernardsville NJ

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

G01B 1127

356399

Zone plate patterns (12,20,61,62) formed on spaced-apart mask and wafer members (10,60) are utilized for alignment purposes in the fabrication of integrated circuits. By providing off-axis illumination of the patterns, a significant mask-to-wafer alignment capability is provided in an X-ray lithographic system. This capability includes being able to correct for so-called magnification errors that arise from physical distortions in the mask and/or wafer or in other components of the system. These errors are compensated for by utilizing the zone plate patterns to form alignment marks that serve as a basis for adjusting the mask-to-wafer separation.

40379698, Jul 26, 1977

Apr 2, 1976

5/673126

Martin Feldman - Murray Hill NJ
Alan David White - Berkeley Heights NJ

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

G01B 1126

356172

Certain classes of patterns, for example so-called zone plates, are utilized as alignment marks in the fabrication of integrated circuits. Such a plate, which functions as a lens, provides a high-brightness image that is relatively insensitive to any degradation of the pattern.

39986390, Dec 21, 1976

Nov 19, 1974

5/525210

Martin Feldman - Murray Hill NJ
Donald Lawrence White - Bernardsville NJ

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

G03C 500

96 362

In IC fabrication, feature size accuracy is monitored by making a test pattern composed of grating lines in proximity to two reference patterns. With the proper feature size, the test pattern will visually appear to have a shade of grey intermediate that of the two reference patterns. Too small a feature size will make the test pattern lighter, while too large a feature size will make it appear darker.