James Chingwei Li - Simi Valley CA,
Marko Sokolich - Los Angeles CA,
Tahir Hussain - Calabasas CA,
David H. Chow - Newbury Park CA,
HRL Laboratories, LLC - Malibu CA
257 79, 257 94, 257103, 257194, 257198, 257201, 257E21125, 257E21127, 257E21603, 257E27012, 257E27128, 257E29022, 257E29066, 257E29114, 257E29189, 257E31073, 438207, 438268, 438302, 438309, 438319
A bipolar junction transistor having an emitter, a base, and a collector includes a stack of one or more layer sets adjacent the collector. Each layer set includes a first material having a first band gap, wherein the first material is highly doped, and a second material having a second band gap narrower than the first band gap, wherein the second material is at most lightly doped.