Mark P Levendorf

20140037944, Feb 6, 2014

Sep 13, 2011

13/821136

William R. Dichtel - Ithaca NY, US
Jiwoong Park - Ithaca NY, US
Arnab Mukherjee - West Bengal, IN
Mark Philip Levendorf - Mansfield OH, US
Arthur Woll - Ithaca NY, US
Eric Spitler - Monroeville PA, US
John Colson - Ithaca NY, US

CORNELL UNIVERSITY - Ithaca NY

C09D 5/00

428336, 4284111, 428457, 428446, 427402

Multilayer structures comprising a covalent organic framework (COF) film in contact with a polyaromatic carbon (PAC) film. The multilayer structures can be made by combining precursor compounds in the presence of a PAC film. The PAC film can be for example, a single layer graphene film. The multilayer structures can be used in a variety of applications such as solar cells, flexible displays, lighting devices, RFID tags, sensors, photoreceptors, batteries, capacitors, gas-storage devices, and gas-separation devices.

20120168724, Jul 5, 2012

Jul 21, 2010

13/384663

Jiwoong Park - Ithaca NY, US
Carlos Ruiz-Vargas - Ithaca NY, US
Mark Philip Levendorf - Chesterland OH, US
Lola Brown - Ithaca NY, US

CORNELL UNIVERSITY - Ithaca NY

H01L 29/775
H01L 21/20

257 29, 438509, 257E29245, 257E2109

A method of manufacturing one or more graphene devices is disclosed. A thin film growth substrate is formed directly on a device substrate. Graphene is formed on the thin film growth substrate. A transistor is also disclosed, having a device substrate and a source supported by the device substrate. The transistor also has a drain separated from the source and supported by the device substrate. The transistor further has a single layer graphene (SLG) channel grown partially on and coupling the source and the drain. The transistor also has a gate aligned with the SLG channel, and a gate insulator between the gate and the SLG channel. Integrated circuits and other apparati having a device substrate, a thin film growth substrate formed directly on at least a portion of the device substrate, and graphene formed directly on at least a portion of the thin film growth substrate are also disclosed.

20150140335, May 21, 2015

Nov 13, 2014

14/540423

- Ithaca NY, US
Mark Levendorf - Mansfield OH, US
Lola Brown - Ithaca NY, US

H01L 29/16
H01L 29/267
H01L 29/06
H01L 29/20

428408

Certain embodiments of the present invention include a versatile and scalable process, “patterned regrowth,” that allows for the spatially controlled synthesis of lateral junctions between electrically conductive graphene and insulating h-BN, as well as between intrinsic and substitutionally doped graphene. The resulting films form mechanically continuous sheets across these heterojunctions. These embodiments represent an element of developing atomically thin integrated circuitry and enable the fabrication of electrically isolated active and passive elements embedded in continuous, one atom thick sheets, which may be manipulated and stacked to form complex devices at the ultimate thickness limit.

20140097537, Apr 10, 2014

Oct 5, 2013

14/046947

- Ithaca NY, US
Mark Levendorf - Mansfield OH, US
Lola Brown - Ithaca NY, US

H05K 1/09
H05K 3/06
H05K 3/36
H05K 3/02

257741, 438478, 427 984, 216 13, 295921, 428408

Certain embodiments of the present invention include a versatile and scalable process, “patterned regrowth,” that allows for the spatially controlled synthesis of lateral junctions between electrically conductive graphene and insulating h-BN, as well as between intrinsic and substitutionally doped graphene. The resulting films form mechanically continuous sheets across these heterojunctions. These embodiments represent an element of developing atomically thin integrated circuitry and enable the fabrication of electrically isolated active and passive elements embedded in continuous, one atom thick sheets, which may be manipulated and stacked to form complex devices at the ultimate thickness limit.