Mark S Hybertsen

6560262, May 6, 2003

Aug 9, 1999

09/370667

Muhammad Ashrafal Alam - Scotch Plains NJ
Mark S. Hybertsen - West Orange NJ

Triquint Technology Holding Co. - Hillsboro OR

H01S 5183

372 50, 372 23, 372 96

An array of VCSEL devices and a process for fabricating the VCSEL array is disclosed. The VCSEL array emits light at n different wavelengths, wherein n is at least two. A first portion of the VCSEL devices in the array emits light at a first wavelength and a second portion of the VCSEL devices emits light at a second wavelength. Each VCSEL device has an active region consisting of alternating bands of quantum wells and boundary layers bounded by top and bottom separate confinement layers. The active region is bounded by top and bottom mirrors. The length of the active region of the VCSEL devices that emit light at the first wavelength, , is different from the length of the active region of the VCSEL devices that emit light at a second wavelength. The array is fabricated by forming successive layers of material on a III-V semiconductor substrate. The composition and dimensions of the individual devices are first determined from the desired emission wavelength, , of the devices in the array.

6664605, Dec 16, 2003

Mar 31, 2000

09/539882

Yuliya A. Akulova - Allentown PA
Michael Geva - Allentown PA
Mark S. Hybertsen - West Orange NJ
Charles W. Lentz - Sinking Spring PA
Abdallah Ougazzaden - Breinigsville PA

TriQuint Technology Holding Co. - Hillsboro OR

H01L 310232

257432, 257436, 257461

A method for decreasing the diffusion of dopant atoms in the active region, as well as the interdiffuision of different types of dopant atoms among adjacent doped regions, of optoelectronic devices is disclosed. The method of the present invention employs a plurality of InAlAs and/or InGaAlAs layers to avoid the direct contact between the dopant atoms and the active region, and between the dopant atoms in adjacent blocking structures of optoelectronic devices. A semi-insulating buried ridge structure, as well as a ridge structure, in which the interdiffusion of different types of dopant atoms is suppressed are also disclosed.

6771869, Aug 3, 2004

Apr 18, 2002

10/125169

Yuliya A. Akulova - Goleta CA
Kenneth G. Glogovsky - Kempton PA
Mark S. Hybertsen - West Orange NJ
Charles W. Lentz - Reading PA
Abdallah Ougazzaden - Breinigsville PA

TriQuint Technology Holding Co. - Hillsboro OR

G02B 626

385131, 385 31, 385129

The present invention provides an optoelectronic device, a method of manufacture thereof, and an optical communication system including the same. The optoelectronic device may include, in one particular embodiment, an active device located over a substrate and a passive device located proximate the active device and over the substrate. The optoelectronic device may further include a doped cladding layer located over the active and passive devices and a barrier layer located over the doped cladding layer and the passive device.

20020175325, Nov 28, 2002

Apr 28, 2000

09/561148

Muhammad Alam - Residence, XP
Julie Eng - Upper Macungie Township PA, US
Mark Hybertsen - West Orange NJ, US
John Johnson - New Providence NJ, US
Leonard Ketelsen - Clinton NJ, US
Roosevlet People - Plainfield NJ, US
Janice People - Plainfield NJ, US
Dennis Romero - Macungie PA, US

H01L029/06

257/025000

The invention is a semiconductor optical device and a method of manufacture. The device includes a first waveguide having an edge, and a second waveguide adjacent to at least a portion of the first waveguide including the edge so that light is coupled from the first to the second waveguide. The second waveguide has a modal index which is essentially constant at least at the edge of the first waveguide. The method includes forming at least the second waveguide by Selective Area Growth (SAG) using oxide pads of a particular geometry to achieve the essentially constant modal index. In one embodiment, the device is an expanded beam laser with an expander portion which is less than 300 microns.

20030209771, Nov 13, 2003

Jun 12, 2003

10/459439

Yuliya Akulova - Allentown PA, US
Michael Geva - Allentown PA, US
Mark Hybertsen - West Orange NJ, US
Charles Lentz - Sinking Spring PA, US
Abdallah Ougazzaden - Breinigsville PA, US

H01L031/0232

257/432000

A method for decreasing the diffusion of dopant atoms in the active region, as well as the interdiffusion of different types of dopant atoms among adjacent doped regions, of optoelectronic devices is disclosed. The method of the present invention employs a plurality of InAlAs and/or InGaAlAs layers to avoid the direct contact between the dopant atoms and the active region, and between the dopant atoms in adjacent blocking structures of optoelectronic devices. A semi-insulating buried ridge structure, as well as a ridge structure, in which the interdiffusion of different types of dopant atoms is suppressed are also disclosed.

20040213313, Oct 28, 2004

May 19, 2004

10/848353

Yuliya Akulova - Allentown PA, US
Michael Geva - Allentown PA, US
Mark Hybertsen - West Orange NJ, US
Charles Lentz - Sinking Spring PA, US
Abdallah Ougazzaden - Breinigsville PA, US

H01S005/00

372/046000, 372/045000

A method for decreasing the diffusion of dopant atoms in the active region, as well as the interdiffusion of different types of dopant atoms among adjacent doped regions, of optoelectronic devices is disclosed. The method of the present invention employs a plurality of InAlAs and/or InGaAlAs layers to avoid the direct contact between the dopant atoms and the active region, and between the dopant atoms in adjacent blocking structures of optoelectronic devices. A semi-insulating buried ridge structure, as well as a ridge structure, in which the interdiffusion of different types of dopant atoms is suppressed are also disclosed.

62618571, Jul 17, 2001

Jun 17, 1998

9/097924

Muhammad Ashrafal Alam - Scotch Plains NJ
Mark S. Hybertsen - West Orange NJ
Roosevelt People - Plainfield NJ

Agere Systems Optoelectronics Guardian Corp. - Miami Lakes FL

H01L 2100

438 31

A process for fabricating a waveguide with a desired tapered profile is disclosed. The waveguide has a first section with a first height and a second section with a second height. The first height is greater than the second height. The waveguide height tapers from the first height to the second height. The waveguide is a compound semiconductor material and is formed using selective area growth. In selective area growth, a dielectric mask is formed on a substrate. The dimensions of the dielectric mask are selected to provide a waveguide with the desired dimensions. The compound semiconductor material is deposited on the substrate using chemical vapor deposition. The dielectric mask affects the rate at which the compound material is deposited in areas of the substrate proximate to the mask. Therefore, the profile of the waveguide formed using the selected mask dimensions is modeled and compared with the desired profile. If modeled profile is not acceptably similar to the desired profile, the dimensions of the mask are modified.

61951668, Feb 27, 2001

May 5, 1999

9/305712

Mary L. Gray - Wyomissing PA
Harald F. Hess - San Diego CA
Mark S. Hybertsen - West Orange NJ
Leonard Jan-Peter Ketelsen - Clinton NJ

Lucent Technologies, Inc. - Murray Hill NJ

G01N 2155

356447

A micro-photoreflectance technique has been developed for performing non-destructive analysis of III-V optoelectronic devices. By using a significantly reduced spot size (for example, 10 micrometers), various compositional features of the device may be analyzed and the Franz-Keldysh oscillations appearing in the micro-photoreflectance wavelength spectra (such as those beyond the barrier/SCL wavelength in an EML structure) may be analyzed to provide information regarding the physical characteristics of the device, such as the electric field and p-i junction placement within an exemplary EML device structure.