Mark Allen Eyolfson

6369887, Apr 9, 2002

Apr 25, 2001

09/842513

Mark Eyolfson - Boise ID
Elton J. Hochhalter - Boise ID
Joe Lee Phillips - Nampa ID
David R. Johnson - Meridian ID
Peter S. Frank - Boise ID

Micron Technology, Inc. - Boise ID

G01N 2188

3562374, 356 72, 2504581, 2504611

A method and apparatus for detection of a particular material, such as photo-resist material, on a sample surface. A narrow beam of light is projected onto the sample surface and the fluoresced and/or reflected light intensity at a particular wavelength band is measured by a light detector. The light intensity is converted to a numerical value and transmitted electronically to a logic circuit which determines the proper disposition of the sample. The logic circuit controls a sample-handling robotic device which sequentially transfers samples to and from a stage for testing and subsequent disposition. The method is particularly useful for detecting photo-resist material on the surface of a semiconductor wafer.

6704107, Mar 9, 2004

Nov 4, 1997

08/964451

Mark Eyolfson - Boise ID
Elton J. Hochhalter - Boise ID
Joe Lee Phillips - Nampa ID
David R. Johnson - Meridian ID
Peter S. Frank - Boise ID

Micron Technology, Inc. - Boise ID

G01B 1100

356388, 356 71, 356389, 356390, 356394, 356433, 356434

A method and apparatus for detection of a particular material, such as photoresist material, on a sample surface. A narrow beam of light is projected onto the sample surface and the fluoresced and/or reflected light intensity at a particular wavelength band is measured by a light detector. The light intensity is converted to a numerical value and transmitted electronically to a logic circuit which determines the proper disposition of the sample. The logic circuit controls a sample-handling robotic device which sequentially transfers samples to and from a stage for testing and subsequent disposition. The method is particularly useful for detecting photo-resist material on the surface of a semiconductor wafer.

7102737, Sep 5, 2006

Jun 4, 2004

10/861738

Mark Eyolfson - Boise ID, US
Elton J. Hochhalter - Boise ID, US
Joe Lee Phillips - Nampa ID, US
David R. Johnson - Meridian ID, US
Peter S. Frank - Boise ID, US

Micron Technology, Inc. - Boise ID

G01N 21/64
G01N 21/88

356 72, 3562374, 356417, 2504581

A method and apparatus for detection of a particular material, such as photo-resist material, on a sample surface are disclosed. A narrow beam of light is projected onto the sample surface and the fluoresced and/or reflected light intensity at a particular wavelength band is measured by a light detector. The light intensity is converted to a numerical value and transmitted electronically to a logic circuit, which determines the proper disposition of the sample. The logic circuit controls a sample-handling robotic device which sequentially transfers samples to and from a stage for testing and subsequent disposition. The method is particularly useful for detecting photo-resist material on the surface of a semiconductor wafer.

7319935, Jan 15, 2008

Feb 12, 2003

10/365997

Xueqing Sun - Manassas VA, US
Mark Eyolfson - Boise ID, US
Chris Langworthy - Boise ID, US
Karl L. Major - Boise ID, US

Micron Technology, Inc. - Boise ID

G01R 31/00

702 59, 3562374

A system and method to perform analysis on test results of multiple integrated circuits. Based on the analysis, the system and method display a wafer map having map indicators representing statistical values of the test results.

20020093642, Jul 18, 2002

Mar 7, 2002

10/093350

Mark Eyolfson - Boise ID, US
Elton Hochhalter - Boise ID, US
Joe Phillips - Nampa ID, US
David Johnson - Meridian ID, US
Peter Frank - Boise ID, US

G01N021/88

356/072000, 356/237400, 250/458100, 250/461100

A method and apparatus for detection of a particular material, such as photo-resist material, on a sample surface. A narrow beam of light is projected onto the sample surface and the fluoresced and/or reflected light intensity at a particular wavelength band is measured by a light detector. The light intensity is converted to a numerical value and transmitted electronically to a logic circuit which determines the proper disposition of the sample. The logic circuit controls a sample-handling robotic device which sequentially transfers samples to and from a stage for testing and subsequent disposition. The method is particularly useful for detecting photo-resist material on the surface of a semiconductor wafer.

20060265156, Nov 23, 2006

Jul 26, 2006

11/493716

Xueqing Sun - Manassas VA, US
Mark Eyolfson - Boise ID, US
Chris Langworthy - Boise ID, US
Karl Major - Boise ID, US

G01R 31/00

702058000

Some embodiments of the invention include system and method for performing a calculation on the data associated with a group of wafers. The system and method display a wafer map having map indicators representing calculation results from the calculation. Other embodiments are described and claimed.

62560948, Jul 3, 2001

Dec 30, 1999

9/475439

Mark Eyolfson - Boise ID
Elton J. Hochhalter - Boise ID
Joe Lee Phillips - Nampa ID
David R. Johnson - Meridian ID
Peter S. Frank - Boise ID

Micron Technology, Inc. - Boise ID

G01N 2188

3562374

A method and apparatus for detection of a particular material, such as photo-resist material, on a sample surface. A narrow beam of light is projected onto the sample surface and the fluoresced and/or reflected light intensity at a particular wavelength band is measured by a light detector. The light intensity is converted to a numerical value and transmitted electronically to a logic circuit which determines the proper disposition of the sample. The logic circuit controls a sample-handling robotic device which sequentially transfers samples to and from a stage for testing and subsequent disposition. The method is particularly useful for detecting photo-resist material on the surface of a semiconductor wafer.

62879278, Sep 11, 2001

Jan 20, 2000

9/488974

Robert Burke - Boise ID
Mark Eyolfson - Boise ID

Micron Technology, Inc. - Boise ID

H01L 21336

438308

In one aspect, the invention includes a method of thermal processing comprising: a) providing a semiconductor substrate, the semiconductor substrate supporting a material that is to be thermally processed; b) forming a sacrificial mass over the material, the mass comprising an inner portion and an outer portion, the inner portion having a different composition than the outer portion and being nearer the material than the outer portion; c) exposing the mass to radiation to heat the mass, the exposing being for a period of time sufficient for the material to absorb heat from the mass and be thermally processed thereby; and d) removing the mass from over the material. In another aspect, the invention includes a method of thermal processing comprising: a) providing a semiconductor substrate, the substrate supporting a material that is to be thermally processed; b) forming a first sacrificial layer over the material; c) forming a second sacrificial layer over the first sacrificial layer, the second sacrificial layer comprising a different composition than the first sacrificial layer; d) exposing the second sacrificial layer to radiation to heat the second layer, the exposing being for a period of time sufficient for the material to absorb heat from the sacrificial layer and be thermally processed thereby; e) cooling the material and the sacrificial layers; and f) removing the sacrificial layers from over the material.