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Marcus L Getkin

from Reading, PA
Age ~49
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Related to:
Alisha S Gaskins, 45Nicole B Getkin, 45Todd M Baessler, 47Robert C Baessler, 78Susan K Getkin, 68Daryl L Hendricks, 54
Connected to:
Megan E Getkin, 40Dorothy A Getler, 92Michael J Getler, 97George M Getlik, 61Meryl Getline, 71Alexander Getman, 72Christina M Getman, 40Crystal D Getman, 42Damon K Getman, 65Elaine B Getman, 79

Marcus Getkin Phones & Addresses

  • Reading, PA
  • 81 Clarence Ave, Shoemakersvle, PA 19555 (610) 562-3588
  • Shoemakersville, PA
  • 216 N Apple St APT 1, Hamburg, PA 19526 (862) 219-3297
  • Flanders, NJ
  • North Branch, NJ
  • Branchburg, NJ
  • Morris Plains, NJ
  • Pine Brook, NJ
  • Swiftwater, PA
  • 81 Clarence Ave, Shoemakersvle, PA 19555

Work

Company: Ii-vi inc. - Pine Brook, NJ Feb 2003 Position: Senior process technician

Education

School / High School: Morristown High School- Morristown, NJ 1991

Skills

Inventory Management

Resumes

Resumes

Marcus Getkin Photo 1

Marcus Getkin Shoemakersville, PA

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Work:
II-VI Inc.
Pine Brook, NJ
Feb 2003 to Jul 2013
Senior Process Technician
Skills:
Inventory Management

Publications

Us Patents

Sic Single Crystal Sublimation Growth Method And Apparatus

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US Patent:
20120103249, May 3, 2012
Filed:
Mar 25, 2010
Appl. No.:
13/255151
Inventors:
Avinash K. Gupta - Basking Ridge NJ, US
Ilya Zwieback - Washington Township NJ, US
Edward Semenas - Allentown PA, US
Marcus L. Getkin - Flanders NJ, US
Patrick D. Flynn - Morris Plains NJ, US
Assignee:
II-VI INCORPORATED - Saxonburg PA
International Classification:
C30B 23/02
C30B 25/20
C30B 25/02
US Classification:
117 89, 118715
Abstract:
A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.

Sublimation Growth Of Sic Single Crystals

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US Patent:
20120285370, Nov 15, 2012
Filed:
Sep 14, 2010
Appl. No.:
13/394982
Inventors:
Avinash K. Gupta - Basking Ridge NJ, US
Ilya Zwieback - Washington Township NJ, US
Edward Semenas - Allentown PA, US
Varatharajan Rengarajan - Pine Brook NJ, US
Marcus L. Getkin - Flanders NJ, US
Assignee:
II-VI INCORPORATED - Saxonburg PA
International Classification:
C30B 23/02
US Classification:
117 84, 118726
Abstract:
In SiC sublimation crystal growth, a crucible is charged with SiC source material and SiC seed crystal in spaced relation and a baffle is disposed in the growth crucible around the seed crystal. A first side of the baffle in the growth crucible defines a growth zone where a SiC single crystal grows on the SiC seed crystal. A second side of the baffle in the growth crucible defines a vapor-capture trap around the SiC seed crystal. The growth crucible is heated to a SiC growth temperature whereupon the SiC source material sublimates and forms a vapor which is transported to the growth zone where the SiC crystal grows by precipitation of the vapor on the SiC seed crystal. A fraction of this vapor enters the vapor-capture trap where it is removed from the growth zone during growth of the SiC crystal.

Method Of Annealing A Sublimation Grown Crystal

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US Patent:
7767022, Aug 3, 2010
Filed:
Apr 19, 2007
Appl. No.:
11/788384
Inventors:
Avinash K. Gupta - Basking Ridge NJ, US
Ilya Zwieback - Washington Township NJ, US
Jihong Chen - Cincinnati OH, US
Marcus Getkin - Flanders NJ, US
Walter R. M. Stepko - Clover SC, US
Edward Semenas - Allentown PA, US
Assignee:
II-VI Incorporated - Saxonburg PA
International Classification:
C30B 23/00
US Classification:
117105, 117108, 117109
Abstract:
A crystal is sublimation grown in a crucible by way of a temperature gradient in the presence of between 1 and 200 Torr of inert gas. The pressure of the inert gas is then increased to between 300 and 600 Torr, while the temperature gradient is maintained substantially constant. The temperature gradient is then reduced and the temperature in the crucible is increased sufficiently to anneal the crystal. Following cooling and removal from the crucible, the crystal is heated in the presence of oxygen in an enclosure to a temperature sufficient to remove unwanted material from the crystal. Following cooling and removal from the enclosure, the crystal surrounded by another instance of the source material is heated in a crucible in the presence 200 and 600 Torr of inert gas to a temperature sufficient to anneal the crystal.

Sic Single Crystal Sublimation Growth Apparatus

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US Patent:
20190249332, Aug 15, 2019
Filed:
Mar 29, 2019
Appl. No.:
16/368977
Inventors:
- Saxonburg PA, US
Ilya Zwieback - Washington Township NJ, US
Edward Semenas - Allentown PA, US
Marcus L. Getkin - Flanders NJ, US
Patrick D. Flynn - Morris Plains NJ, US
International Classification:
C30B 29/36
C30B 23/00
Abstract:
A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.
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Marcus L Getkin from Reading, PA, age ~49 Get Report