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Marcie R Black

from Lincoln, MA
Age ~52
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Also known as:
Marcie A Black, Marcie L Black, Marcie R Karty, Marcy Black, Marci R Karty
Phone and address:
173 Bedford Rd, Lincoln Center, MA 01773
(781) 257-5161
Related to:
Jacob Mcclaskie, 32
Connected to:
Ab Black, 85Abdur R Black, 40Aennika Black, 43Ahiezer A Black, 56Aimie K Black, 48Aleah W Black, 30Allida M Black, 72Altricia L Black, 57Alwin M Black, 41Amaya L Black, 46

Marcie Black Phones & Addresses

  • 173 Bedford Rd, Lincoln, MA 01773 (781) 257-5161 (781) 259-8182
  • 5 Gardner St, Newton, MA 02458 (617) 795-1796
  • Los Alamos, NM
  • Somerville, MA
  • Cambridge, MA
  • Reynoldsburg, OH
  • Austin, TX
  • Minier, IL
  • Salem, NH
  • 60 Vinal Ave #2, Somerville, MA 02143 (617) 593-9016

Work

Position: Administrative Support Occupations, Including Clerical Occupations

Education

Degree: Bachelor's degree or higher

Resumes

Resumes

Marcie Black Photo 1

Marcie Black

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Location:
Greater Boston Area
Industry:
Nanotechnology
Marcie Black Photo 2

Karty

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Location:
173 Bedford Rd, Lincoln, MA 01773
Work:

Karty
Marcie Black Photo 3

Marcie Black

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Marcie Black Photo 4

Marcie Black

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Business Records

Name / Title
Company / Classification
Phones & Addresses
Marcie Black
Principal
Band Gap Engineering
Engineering Services
6 Gill St, Woburn, MA 01801
Marcie R. Black
Principal
Advanced Silicon Group
Business Services, Nec, Nsk
173 Bedford Rd, Lincoln Center, MA 01773
Marcie Black
President, Owner
Bandgap Engineering, Inc.
Nanotechnology · Noncommercial Research Organization
6 Gill St UNIT H, Woburn, MA 01801
6 Gill St Suite H, Woburn, MA 01801
13 Garabedian Dr, Salem, NH 03079
5 Gardner St, Newton, MA 02458
(954) 471-1357

Publications

Us Patents

Optoelectronic Devices Utilizing Materials Having Enhanced Electronic Transitions

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US Patent:
7893512, Feb 22, 2011
Filed:
Feb 27, 2007
Appl. No.:
11/712128
Inventors:
Marcie R. Black - Newton MA, US
Assignee:
Los Alamos National Security, LLC - Los Alamos NM
International Classification:
H01L 27/14
US Classification:
257431, 257466, 977762, 438 57
Abstract:
An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

Designing The Host Of Nano-Structured Optoelectronic Devices To Improve Performance

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US Patent:
7973995, Jul 5, 2011
Filed:
Apr 3, 2009
Appl. No.:
12/418229
Inventors:
Marcie R. Black - Lincoln MA, US
Brent A. Buchine - Watertown MA, US
Assignee:
Bandgap Engineering Inc. - Woburn MA
International Classification:
G02F 1/03
US Classification:
359245
Abstract:
A nanostructured optoelectronic device is provided which comprises a nanostructured material and a host material intermingled with the nanostructured material. The host material may have a higher index of refraction than the nanostructured material. The host material's index of refraction may be chosen to maximize the effective active area of the device. In an alternative embodiment, the host material comprises scattering centers or absorption/luminescence centers which absorb light and reemit the light at a different energy or both.

Process For Fabricating Nanowire Arrays

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US Patent:
8143143, Mar 27, 2012
Filed:
Apr 14, 2009
Appl. No.:
12/423623
Inventors:
Brent A. Buchine - Watertown MA, US
Faris Modawar - Georgetown TX, US
Marcie R. Black - Lincoln MA, US
International Classification:
H01L 21/20
US Classification:
438478, 257E21219, 977762
Abstract:
A process is provided for etching a silicon-containing substrate to form nanowire arrays. In this process, one deposits nanoparticles and a metal film onto the substrate in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. One submerges the metallized substrate into an etchant aqueous solution comprising HF and an oxidizing agent. In this way arrays of nanowires with controlled diameter and length are produced.

Method Of Fabricating Metal- And Ceramic- Matrix Composites And Functionalized Textiles

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US Patent:
8157948, Apr 17, 2012
Filed:
Apr 8, 2008
Appl. No.:
12/099601
Inventors:
James L. Maxwell - Jemez Springs NM, US
Craig A. Chavez - Los Alamos NM, US
Marcie R. Black - Lincoln MA, US
Assignee:
Los Alamos National Security, LLC - Los Alamos NM
International Classification:
B29C 35/08
US Classification:
1562722, 156267
Abstract:
A method of manufacturing an article comprises providing a first sheet, wetting the first sheet with a liquid precursor to provide a first wet sheet, and irradiating the first wet sheet in a pattern corresponding to a first cross section of the article such that the liquid precursor is at least partially converted to a solid in the first cross section. A second sheet is disposed adjacent to the first sheet. The method further comprises wetting the second sheet with the liquid precursor to provide a second wet sheet, and irradiating the second wet sheet in a pattern corresponding to a second cross section of the article such that the liquid precursor is at least partially converted to a solid in the second cross section. In particular the liquid precursor may be converted to a metal, ceramic, semiconductor, semimetal, or a combination of these materials.

Optoelectronic Devices Utilizing Materials Having Enhanced Electronic Transitions

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US Patent:
8415758, Apr 9, 2013
Filed:
Feb 22, 2011
Appl. No.:
13/032076
Inventors:
Marcie R. Black - Lincoln MA, US
Assignee:
Los Alamos National Security, LLC - Los Alamos NM
International Classification:
H01L 27/14
US Classification:
257431, 257466, 977762, 438 57
Abstract:
An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

Designing The Host Of Nano-Structured Optoelectronic Devices To Improve Performance

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US Patent:
8416485, Apr 9, 2013
Filed:
Jun 6, 2011
Appl. No.:
13/154107
Inventors:
Marcie R. Black - Lincoln MA, US
Brent A. Buchine - Watertown MA, US
Assignee:
Bandgap Engineering, Inc. - Woburn MA
International Classification:
G02F 1/03
US Classification:
359241, 359245
Abstract:
A nanostructured optoelectronic device is provided which comprises a nanostructured material and a host material intermingled with the nanostructured material. The host material may have a higher index of refraction than the nanostructured material. The host material's index of refraction may be chosen to maximize the effective active area of the device. In an alternative embodiment, the host material comprises scattering centers or absorption/luminescence centers which absorb light and reemit the light at a different energy or both.

Nanostructured Devices

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US Patent:
8450599, May 28, 2013
Filed:
Nov 16, 2009
Appl. No.:
12/619092
Inventors:
Brent A. Buchine - Watertown MA, US
Faris Modawar - Georgetown TX, US
Marcie R. Black - Lincoln MA, US
Assignee:
Bandgap Engineering, Inc. - Woburn MA
International Classification:
H01L 31/00
H01L 21/00
US Classification:
136255, 136256, 136261, 438 57, 977948
Abstract:
A photovoltaic device is provided. It comprises at least two electrical contacts, p type dopants and n type dopants. It also comprises a bulk region and nanowires in an aligned array which contact the bulk region. All nanowires in the array have one predominant type of dopant, n or p, and at least a portion of the bulk region also comprises that predominant type of dopant. The portion of the bulk region comprising the predominant type of dopant typically contacts the nanowire array. The photovoltaic devices' p-n junction would then be found in the bulk region. The photovoltaic devices would commonly comprise silicon.

Process For Structuring Silicon

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US Patent:
20100092888, Apr 15, 2010
Filed:
Oct 9, 2009
Appl. No.:
12/576490
Inventors:
Brent A. Buchine - Watertown MA, US
Faris Modawar - Georgetown TX, US
Marcie R. Black - Lincoln MA, US
International Classification:
G03F 7/20
B32B 3/10
B32B 15/00
C23F 1/00
H01L 33/00
H01L 31/0216
US Classification:
430296, 428156, 428173, 216 95, 216 49, 216 40, 438 42, 216 24, 216 17, 438 98, 257E33066, 257E31119, 977762
Abstract:
A process for etching a silicon-containing substrate to form structures is provided. In the process, a metal is deposited and patterned onto a silicon-containing substrate (commonly one with a resistivity above 1-10 ohm-cm) in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. The metallized substrate is submerged into an etchant aqueous solution comprising about 4 to about 49 weight percent HF and an oxidizing agent such as about 0.5 to about 30 weight percent HO, thus producing a metallized substrate with one or more trenches. A second silicon etch is optionally employed to remove nanowires inside the one or more trenches.
Control profile
Marcie R Black from Lincoln, MA, age ~52 Get Report