Marc M Kollrack

6338874, Jan 15, 2002

Dec 14, 1995

08/572385

Kam S. Law - Union City CA
Robert Robertson - Palo Alto CA
Pamela Lou - San Francisco CA
Marc Michael Kollrack - Alameda CA
Angela Lee - Sunnyvale CA
Dan Maydan - Los Altos Hills CA

Applied Materials, Inc. - Santa Clara CA

C23C 1600

42725518, 42725519, 42725527, 42725537, 427255394

Multilayer deposition of thin films onto glass substrates to form thin film transistors can be carried out in the same chamber under similar reaction conditions at high deposition rates. We have found that sequential thin layers of silicon nitride and amorphous silicon can be deposited in the same chamber by chemical vapor deposition using pressure of at least 0. 5 Torr and substrate temperatures of about 250-370Â C. Subsequently deposited different thin films can also be deposited in separate chemical vapor deposition chambers which are part of a single multichamber vacuum system.

6444277, Sep 3, 2002

Sep 9, 1994

08/303566

Kam S. Law - Union City CA
Robert Robertson - Palo Alto CA
Pamela Lou - San Francisco CA
Marc Michael Kollrack - Alameda CA
Angela Lee - Sunnyvale CA
Dan Maydan - Los Altos Hills CA

Applied Materials, Inc. - Santa Clara CA

B05D 306

427574, 427535, 42725518, 42725528, 4272557, 427573

Amorphous silicon thin films can be deposited onto large area glass substrates at high deposition rates by chemical vapor deposition using pressure of at least 0. 8 Torr and temperatures of about 270-350Â C. and fairly high gas flow rates of silane in a hydrogen carrier gas. The spacing between the inlet gas manifold and the substrate in the CVD chamber is maintained so as to maximize the deposition rate. Improved transistor characteristics are observed when the substrate is either exposed to a hydrogen plasma for a few seconds prior to high rate deposition of the amorphous silicon, or when a first layer of amorphous silicon is deposited using a slow deposition rate process prior to deposition of the high deposition rate amorphous silicon.

62256017, May 1, 2001

Jul 13, 1998

9/115112

Emanuel Beer - San Jose CA
Duoyan Shen - San Jose CA
Eitan Zohar - Cupertino CA
Marc M. Kollrack - San Francisco CA

Applied Komatsu Technology, Inc. - Tokyo

F27B 514

219390

A technique for heating a substrate support, such as a susceptor, includes establishing respective final temperature setpoints for first and second heating elements in the susceptor. The temperatures of the heating elements are raised to their respective final temperature setpoints based on a predetermined heating rate. The temperatures of the first and second heating elements are controlled so that the difference between the temperatures of the first and second heating elements does not exceed the predetermined value while the temperatures of the heating elements are raised to their respective final temperature setpoints. Controlling the temperatures includes setting interim setpoints for the first and second heating elements, where the interim setpoint for the heating element having the greater heating capacity depends on the current value of the interim setpoint of the other heating element and the predetermined value. The temperatures of the first and second heating elements are raised toward their respective interim temperature setpoints for a predetermined delay period. At the end of the delay period, new interim setpoints can be established and the process repeated until the temperature of at least one of the first and second heating elements is close to its respective final setpoint.

53805666, Jan 10, 1995

Jun 21, 1993

8/080018

Robert Robertson - Palo Alto CA
Marc M. Kollrack - Alameda CA
Angela T. Lee - Sunnyvale CA
Kam Law - Union City CA
Dan Maydan - Los Altos Hills CA

Applied Materials, Inc. - Santa Clara CA

B05D 306

427534

A method of limiting sticking of a body (substrate) to a susceptor after the body has been coated with a layer in a deposition chamber by plasma chemical vapor deposition includes subjecting the coated body to a plasma of an inactive gas, e. g. , hydrogen, nitrogen, argon or ammonia, which does not adversely affect the coating and does not add additional layers to the body. After the coated body is subjected to the plasma of the inactive gas, the body is separated from the susceptor.

53993870, Mar 21, 1995

Apr 13, 1994

8/227479

Kam S. Law - Union City CA
Robert Robertson - Palo Alto CA
Pamela Lou - San Francisco CA
Marc M. Kollrack - Alameda CA
Angela Lee - Sunnyvale CA
Dan Maydan - Los Altos Hills CA

Applied Materials, Inc. - Santa Clara CA

B05D 306

427574

High quality silicon nitride thin films can be deposited by plasma CVD onto large area glass substrates at high deposition rates by adjusting the spacing between the gas inlet manifold and substrate, maintaining the temperature at about 300. degree. -350. degree. C. , and a pressure of at least 0. 8 Torr. Subsequently deposited different thin films can also be deposited in separate chemical vapor deposition chambers which are part of a single vacuum system.