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Marc Christophersen

from Berwyn Heights, MD
Age ~52
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Also known as:
Christopher Markos
Phone and address:
8518 60Th Ave, College Park, MD 20740
Related to:
Roger G SageLyndsey Beth Markos, 42Carol Living Sage, 66Chris Markos, 75Patti M Markos, 70Christophe Markos, 75Patti MarkosChristopher Markos, 42Hansjurgen ChristophersenJennifer M Klooster, 39
Connected to:
Aaron L Christofferson, 65Aaron M Christoff, 62Abigail J Christman, 36Ad C ChristopherAdrian M Christofferson, 43Alanna Christopher, 52Alejandro A Christopher, 37Alex A Christoff, 96Alexa Christon, 44Alexandra Christova, 76

Marc Christophersen Phones & Addresses

  • 8518 60Th Ave, Berwyn Hts, MD 20740
  • Berwyn Heights, MD
  • Alexandria, VA
  • 8230 Gradington Dr, Westerville, OH 43081 (614) 781-9428
  • Rochester, NY
  • 1874 Crittenden Rd, Rochester, NY 14623 (585) 475-9451

Work

Position: Executive, Administrative, and Managerial Occupations

Education

Degree: Associate degree or higher

Resumes

Resumes

Marc Christophersen Photo 1

Phd, Physical Scientist

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Location:
Washington, DC
Industry:
Defense & Space
Work:
US Naval Research Laboratory since Sep 2009
Physical Scientist
US Naval Research Laboratory Dec 2006 - Sep 2009
NRC Post Doc
University of Maryland Nov 2004 - Dec 2006
Postdoc
Lake Shore Cryotronics Sep 2003 - Oct 2004
Scientist
University of Rochester Jun 2002 - Sep 2003
Postdoc
Education:
Christian-Albrechts-Universität zu Kiel 1998 - 2002
PhD, Material Science Christian-Albrechts-Universität zu Kiel 1993 - 1998
M.Sc., Material Science Graduate School
Skills:
Mems
Nanotechnology
Electrochemistry
Materials Science
Characterization
Chemistry
Sensors
Spectroscopy
Lithography
Thin Films
Physics
Tem
Afm
Powder X Ray Diffraction
Cvd
Science
Nanomaterials
R
Marc Christophersen Photo 2

Marc Christophersen

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Publications

Us Patents

Semiconductor Electrochemical Etching Processes Employing Closed Loop Control

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US Patent:
7560018, Jul 14, 2009
Filed:
Jan 21, 2005
Appl. No.:
11/038500
Inventors:
Vladimir Kochergin - Westerville OH, US
Marc Christophersen - Westerville OH, US
Assignee:
Lake Shore Cryotronics, Inc. - Westerville OH
International Classification:
B23H 3/02
US Classification:
205645, 205641, 205646
Abstract:
Methods and apparatus for providing closed-loop control over an electrochemical etching process during porous semiconductor fabrication enhance the quality of the porous semiconductor materials, especially those contained structural variations (such as porosity or morphology variations) along the thickness of said porous semiconductors. Such enhancement of the control over the electrochemical etching process is highly desired for many applications of porous semiconductor materials.

Methods And Systems Of Thick Semiconductor Drift Detector Fabrication

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US Patent:
7968959, Jun 28, 2011
Filed:
Oct 19, 2009
Appl. No.:
12/581710
Inventors:
Marc Christophersen - Alexandria VA, US
Bernard F. Phlips - Great Falls VA, US
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
H01L 31/115
H01L 21/00
US Classification:
257429, 257622, 257E21218, 257E31092, 25037001, 438 56
Abstract:
Gray-tone lithography technology is used in combination with a reactive plasma etching operation in the fabrication method and system of a thick semiconductor drift detector. The thick semiconductor drift detector is based on a trench array, where the trenches in the trench array penetrate the bulk with different depths. These trenches form an electrode. By applying different electric potentials to the trenches in the trench array, the silicon between neighboring trenches fully depletes. Furthermore, the applied potentials cause a drifting field for generated charge carriers, which are directed towards a collecting electrode.

Gray-Tone Lithography Using Optical Diffusers

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US Patent:
8372578, Feb 12, 2013
Filed:
Aug 21, 2008
Appl. No.:
12/195594
Inventors:
Marc Christophersen - Alexandria VA, US
Bernard Phlips - Great Falls VA, US
Assignee:
The United States of America, as represented by the Secretary of the Navy - Washington DC
International Classification:
G03F 7/20
US Classification:
430325, 430321
Abstract:
A method of: directing an exposing light through an optical diffuser; directing the diffused light though a photomask having transparent areas corresponding to a gray-tone pattern; directing the masked light onto a photoresist material on a substrate; developing the photoresist to produce a three dimensional structure in the photoresist.

Methods And Systems Of Isolating Segmented Radiation Detectors Using Alumina

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US Patent:
8481953, Jul 9, 2013
Filed:
Feb 29, 2012
Appl. No.:
13/408852
Inventors:
Marc Christophersen - Berwyn Heights MD, US
Bernard F. Phlips - Great Falls VA, US
Assignee:
The United States of America, as represented by the Secretary of the Navy - Washington DC
International Classification:
G01T 1/24
US Classification:
25037001
Abstract:
Radiation detectors can be made of n-type or p-type silicon. All segmented detectors on p-type silicon and double-sided detectors on n-type silicon require an “inter-segment isolation” to separate the n-type strips from each other; an alumina layer for isolating the strip detectors is applied, and forms negative charges at the silicon interface with appropriate densities. When alumina dielectric is deposited on silicon, the negative interface charge acts like an effective p-stop or p-spray barrier because electrons are “pushed” away from the interface due to the negative interface charge.

Device For Etching Semicnductors With A Large Surface Area

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US Patent:
20050239292, Oct 27, 2005
Filed:
Jul 24, 2003
Appl. No.:
10/520761
Inventors:
Marc Christophersen - Westerville OH, US
Jorg Bahr - Altenholz, DE
Jurgen Carstensen - Kiel, DE
Kay Steen - Bothell WA, US
Georgi Popkirov - Kiel, DE
Helmut Foll - Monkeberg, DE
International Classification:
H01L021/302
US Classification:
438752000, 438753000
Abstract:
The device etches semiconductors with a large surface area in a trough-shaped receptacle containing a liquid electrolyte. A sample head is mounted inside the etching trough, and is provided with a device for holding at least one semiconductor wafer. The device is tilted to promote turbulent electrolyte flow in a space between a bottom surface of the semiconductor wafer and top surface of the trough-shaped receptacle.

Mesoporous Silicon Infrared Filters And Methods Of Making Same

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US Patent:
20060027459, Feb 9, 2006
Filed:
May 27, 2005
Appl. No.:
11/138672
Inventors:
Marc Christophersen - Westerville OH, US
Vladimir Kochergin - Westerville OH, US
Philip Swinehart - Westerville OH, US
Assignee:
Lake Shore Cryotronics, Inc. - Westerville OH
International Classification:
B23H 3/00
US Classification:
205079000, 205674000
Abstract:
Mesoporous silicon optical filters can be used to filter light in the near infrared, mid infrared and/or far infrared spectral ranges. The special advantages of mesoporous filters in cold temperature applications include improved mechanical stability, absence of delamination problems, manufacturability, and transparency of the mesoporous silicon material throughout a wide spectral range. Techniques are disclosed for enhancing the transparency range and environmental and mechanical stabilities of the mesoporous silicon filters.

Macroporous Silicon Microcavity With Tunable Pore Size

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US Patent:
20060276047, Dec 7, 2006
Filed:
Mar 14, 2006
Appl. No.:
11/374729
Inventors:
Huimin Ouyang - Rochester NY, US
Philippe Fauchet - Pittsford NY, US
Marc Christophersen - Alexandria VA, US
Assignee:
University of Rochester - Rochester NY
International Classification:
H01L 21/00
US Classification:
438753000, 438781000, 438049000, 257414000
Abstract:
A biological sensor which includes: a macroporous semiconductor structure comprising a central layer interposed between upper and lower layers, each of the upper and lower layers including strata of alternating porosity; and one or more probes coupled to the porous semiconductor structure, the one or more probes binding to a target molecule, whereby a detectable change occurs in a refractive index of the biological sensor upon binding of the one or more probes to the target molecule. Methods of making the biological sensor and methods of using the same are disclosed, as is a detection device which includes such a biological sensor.

Methods And Systems Of Curved Radiation Detector Fabrication

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US Patent:
20100264502, Oct 21, 2010
Filed:
Oct 19, 2009
Appl. No.:
12/581469
Inventors:
Marc Christophersen - Alexandria VA, US
Bernard F. Phlips - Great Falls VA, US
Assignee:
US Gov't Represented by the Secretary of the Navy Office of Naval Research (ONR/NRL) code OOCCIP - Arlington VA
International Classification:
H01L 31/0352
H01L 31/18
US Classification:
257429, 257447, 438 56, 438 75, 257E31038
Abstract:
Gray tone lithography is used to form curved silicon topographies for semiconductor based solid-state imaging devices. The imagers are curved to a specific curvature and shaped directly for the specific application; such as curved focal planes. The curvature of the backside is independent from the front surface, which allows thinning of the detector using standard semiconductor processing.
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Marc Christophersen from Berwyn Heights, MD, age ~52 Get Report