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Manuel P Rivera

from Salinas, CA
Age ~61
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Also known as:
Manuel Paul Rivera, Manue L Rivera, Manuel P Martinez, Manuel P Riviera
Phone and address:
18531 Moro Rd, Salinas, CA 93907
(831) 272-6337
Related to:
Gloria C Rivera, 43Victorino M Morga, 59Efren Martinez, 54Lorna Rivera, 69Maria Garcia, 56
Connected to:
Abigail Rivera, 78Abraham Rivera, 78Abreu K Rivera, 31Adel Rivera, 38Adi Rivera, 27Adilio Rivera, 62Adria E Rivera, 82Africa L Rivera, 49Agatha A Rivera, 97Agustin R Rivera, 53

Manuel Rivera Phones & Addresses

  • 18531 Moro Rd, Salinas, CA 93907 (831) 272-6337
  • Prunedale, CA
  • Watsonville, CA
  • Freedom, CA
  • San Jose, CA
  • Thermal, CA
  • Monterey, CA

Professional Records

Medicine Doctors

Manuel Rivera Photo 1

Manuel C. Rivera

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Specialties:
Family Medicine
Work:
Manuel C Rivera MD Medical Clinic
2983 Chino Ave STE A2, Chino Hills, CA 91709
(909) 465-6342 (phone), (909) 465-6345 (fax)
Education:
Medical School
Manila Central Univ, Coll of Med, Caloocan City, Rizal, Philippines
Graduated: 1966
Procedures:
Electrocardiogram (EKG or ECG)
Hearing Evaluation
Vaccine Administration
Conditions:
Acute Bronchitis
Acute Pharyngitis
Acute Upper Respiratory Tract Infections
Allergic Rhinitis
Benign Paroxysmal Positional Vertigo
Languages:
English
Spanish
Tagalog
Description:
Dr. Rivera graduated from the Manila Central Univ, Coll of Med, Caloocan City, Rizal, Philippines in 1966. He works in Chino Hills, CA and specializes in Family Medicine. Dr. Rivera is affiliated with Pomona Valley Hospital Medical Center.
Manuel Rivera Photo 2

Manuel R. De Aguirre Rivera

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Specialties:
Pulmonary Critical Care Medicine
Work:
Wentworth Health Partners
789 Central Ave, Dover, NH 03820
(603) 740-9713 (phone), (603) 740-2447 (fax)
Languages:
English
Description:
Dr. De Aguirre Rivera works in Dover, NH and specializes in Pulmonary Critical Care Medicine. Dr. De Aguirre Rivera is affiliated with Wentworth-Douglass Hospital.
Manuel Rivera Photo 3

Manuel C Rivera

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Specialties:
Family Medicine
Education:
Manila Central University-Filemon D. Tanchoco Foundation (1966)

Business Records

Name / Title
Company / Classification
Phones & Addresses
Manuel Rivera
Owner
Manuel P Rivera
Services-Misc
1054 Ofarrell Ct, Salinas, CA 93907
Manuel Rivera
CORPORACION FINANCIERA DE LA NUEVA GENERACION, INC

Publications

Isbn (Books And Publications)

Manuel Rivera

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Author

Manuel Rivera

ISBN #

8472328996

Manuel Rivera: Museo Pablo Serrano Noviembre 2002-Enero 2003

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Author

Manuel Rivera

ISBN #

8477538441

Manuel Rivera: Exposicion

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Author

Manuel Rivera

ISBN #

8480260858

La Prensa En Espana

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Author

Manuel Gomez Rivera

ISBN #

8450012295

Us Patents

Methods And Apparatuses For High Pressure Gas Annealing

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US Patent:
20070187386, Aug 16, 2007
Filed:
Feb 10, 2006
Appl. No.:
11/351816
Inventors:
Sang-Shin Kim - Glen Ivy CA, US
Manuel Rivera - San Jose CA, US
Suk-Dong Hong - Busan, KR
Assignee:
POONGSAN MICROTEC CORPORATION - BUSAN
International Classification:
H01L 21/00
F27D 11/00
US Classification:
219385000, 438038000
Abstract:
Novel methods and apparatuses for annealing semiconductor devices in a high pressure gas environment. According to an embodiment, the annealing vessel has a dual chamber structure, and potentially toxic, flammable, or otherwise reactive gas is confined in an inner chamber which is protected by pressures of inert gas contained in the outer chamber. The incoming gas delivery system and exhaust gas venting system are likewise protected by various methods. Embodiments of the present invention can be used, for example, for high-K gate dielectric anneal, post metallization sintering anneal, and forming gas anneal in the semiconductor manufacturing process.

Method And Apparatuses For High Pressure Gas Annealing

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US Patent:
20090148965, Jun 11, 2009
Filed:
Feb 4, 2009
Appl. No.:
12/322665
Inventors:
Sang-Shin Kim - Glen Ivy CA, US
Manuel Scott Rivera - San Jose CA, US
Suk-Dong Hong - Busan, KR
Assignee:
POONGSAN MICROTEC CORPORATION - BUSAN
International Classification:
H01L 21/66
H01L 21/30
US Classification:
438 14, 438795, 257E21525, 257E21211
Abstract:
Novel methods and apparatuses for annealing semiconductor devices in a high pressure gas environment. According to an embodiment, the annealing vessel has a dual chamber structure, and potentially toxic, flammable, or otherwise reactive gas is confined in an inner chamber which is protected by pressures of inert gas contained in the outer chamber. The incoming gas delivery system and exhaust gas venting system are likewise protected by various methods. Embodiments of the present invention can be used, for example, for high-K gate dielectric anneal, post metallization sintering anneal, and forming gas anneal in the semiconductor manufacturing process.

Methods And Apparatuses For High Pressure Gas Annealing

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US Patent:
20130302916, Nov 14, 2013
Filed:
Jul 3, 2013
Appl. No.:
13/935434
Inventors:
- Busan, KR
Manuel Scott Rivera - San Jose CA, US
Suk-Dong Hong - Busan, KR
International Classification:
H01L 21/66
US Classification:
438 5
Abstract:
Novel methods and apparatuses for annealing semiconductor devices in a high pressure gas environment. According to an embodiment, the annealing vessel has a dual chamber structure, and potentially toxic, flammable, or otherwise reactive gas is confined in an inner chamber which is protected by pressures of inert gas contained in the outer chamber. The incoming gas delivery system and exhaust gas venting system are likewise protected by various methods. Embodiments of the present invention can be used, for example, for high-K gate dielectric anneal, post metallization sintering anneal, and forming gas anneal in the semiconductor manufacturing process.
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Manuel P Rivera from Salinas, CA, age ~61 Get Report