US Patent:
20110261605, Oct 27, 2011
Inventors:
Nicholas G. Kioussis - Northridge CA, US
Luis A. Agapito - Northridge CA, US
International Classification:
G11C 11/00
H01L 29/66
C01B 31/04
US Classification:
365129, 423448, 257 9, 977700, 977762, 257E29168
Abstract:
The use of diamond-shaped graphene nano-patches as novel non-volatile switching elements exhibiting transitions between high and low conductance states based on changes of magnetic ordering of these states. Non-magnetic reconstructed graphene nano-ribbons are used as non-invasive leads to implement the switching elements as carbon-nanoflake based memories and transistors. Switching of the elements may be implemented by electric-field-induced altering of the magnetic state. Graphene nano-patch shapes of certain geometries provide passive electric-field sources such as to establish initial bits of information saved in graphene-based memories.