Resumes
Resumes
Longcheng Wang Phones & Addresses
-
603 Causley Ave, Arlington, TX 76010 (817) 299-8892
Publications
Us Patents
Formation Of P-N Homogeneous Junctions
View pageUS Patent:
7768003, Aug 3, 2010
Filed:
Sep 14, 2007
Appl. No.:
11/855568
Inventors:
Meng Tao - Colleyville TX, US
Longcheng Wang - Arlington TX, US
Longcheng Wang - Arlington TX, US
Assignee:
Board of Regents, The University of Texas System - Austin TX
International Classification:
H01L 29/10
US Classification:
257 43, 257E21002, 257E29068, 438 85, 438104
Abstract:
Methods, structures and devices are described, in which structures and devices have one or more p-n homo-junctions fabricated in solution. The junctions are formed by a sequential deposition of an oxide of copper from solution. Conduction type of the oxide of copper is controlled by pH of the solution.