Long Duy Nguyen

6566315, May 20, 2003

Dec 5, 2001

10/007490

William A. Wojtczak - Austin TX
Ma. Fatima Seijo - Hayward CT
Dave Bernhard - Newtown CT
Long Nguyen - San Jose CA

Advanced Technology Materials, Inc. - Danbury CT

B08B 600

510175, 510176, 510177, 510178, 510506, 134 2, 134 3

A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0. 1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0. 1-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

6527819, Mar 4, 2003

Dec 18, 2001

10/022308

William A. Wojtczak - Austin TX
Thomas H. Baum - New Fairfield CT
Long Nguyen - San Jose CA
Cary Regulski - Sugarhill GA

Advanced Technology Materials, Inc. - Danbury CT

C09G 102

51308, 51307, 51309, 106 3, 438692, 438693, 252 791, 252 792, 252 795, 216 89, 216 99, 216101, 216105, 216106

A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.

6896826, May 24, 2005

Oct 23, 2001

10/047554

William A. Wojtczak - Austin TX, US
Ma. Fatima Seijo - Hayward CA, US
David Bernhard - Newtown CT, US
Long Nguyen - San Jose CA, US

Advanced Technology Materials, Inc. - Danbury CT

C09K013/00
C09K013/04
C09K013/08
C09K013/06
H01L021/302

252 791, 252 792, 252 793, 252 794, 438706, 438745, 134 12, 134 13

A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0. 1-40% wt. nitrogenous component, e. g. , a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

7605113, Oct 20, 2009

May 24, 2005

11/135892

William A. Wojtczak - Austin TX, US
Ma. Fatima Seijo - Hayward CA, US
David Bernhard - Newtown CT, US
Long Nguyen - San Jose CA, US

Advanced Technology Materials Inc. - Danbury CT

H01L 21/306

510175, 134 13, 510176

A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0. 1-40% wt. nitrogenous component, e. g. , a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

8150028, Apr 3, 2012

Dec 17, 2008

12/336835

Long Nguyen - Pflugerville TX, US

Silicon Laboratories, Inc. - Austin TX

H04M 1/00
H01C 7/12

379412, 361119

In a particular embodiment, a circuit device includes a first circuit having a first plurality of serial terminals including a first data receive terminal and a first data transmit terminal. The first plurality of serial terminals is communicatively coupled to a particular circuit via isolation circuitry to communicate first serial data. The circuit device further includes a second circuit having a second plurality of serial terminals including a second data receive terminal coupled to the first data transmit terminal and including a second data transmit terminal coupled to the first data receive terminal to communicate second serial data to the particular circuit via the first data receive and transmit terminals.

8293694, Oct 23, 2012

Oct 19, 2009

12/581843

William A. Wojtczak - Austin TX, US
Ma. Fatimo Seijo - Hayward CA, US
David Bernhard - Kooskia ID, US
Long Nguyen - San Jose CA, US

Advanced Technology Materials, Inc. - Danbury CT

C11D 7/50
G03F 7/42

510175, 134 13, 252 791

A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0. 1-40% wt. nitrogenous component, e. g. , a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

20020147018, Oct 10, 2002

Feb 21, 2001

09/790438

Elie Jreij - Pflugerville TX, US
James Umstetter - Taylor TX, US
Long Nguyen - Pflugerville TX, US

SIEMENS INFORMATION AND COMMUNICATION PRODUCTS, LLC

H04Q007/20

455/452000, 455/453000, 455/464000, 455/463000

An improved RF channel management scheme is described. In accordance with this scheme, decisions regarding whether to reserve or release a channel in a hold state are based upon system usage and configuration information. By this approach, the communication capacity of a wireless telephone system may be optimized for individual wireless communication environments. In one embodiment, whether an RF channel in a hold state is released or reserved is determined based, at least in part, upon a count of unused RF channels available to the wireless telephone system. In another embodiment, whether an RF channel in a hold state is released or reserved is determined based, at least in part, upon a class of service identifier assigned to a wireless telephone holding an RF channel in a hold state.

20060171527, Aug 3, 2006

Dec 30, 2004

11/027704

Michael Mills - Austin TX, US
Long Nguyen - Austin TX, US

H04M 1/00

379395010

A driver is operated to drive signals from an integrated circuit. Operating the driver generates interference at substantially a first frequency that may interfere with circuitry sharing a power supply with the driver. A supply node is repeatedly coupled to and decoupled from the driver at substantially a second frequency higher than the first frequency to help supply power to the driver and to help prevent interference from propagating to circuitry sharing the power supply.