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Lisa M Studzinski

from Shelby Township, MI
Age ~59
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Also known as:
Lisa Michelle Studzinski, Lisa M Steele, Lisa I
Phone and address:
14801 Sparrow Dr, Shelby Township, MI 48315
(586) 532-1836
Related to:
Hannah Elizabeth Stella, 38
Connected to:
Adam T Studzinski, 35Andrea D Studzinski, 63Jeffrey Studzinski, 54Lara M Studzinski, 54Paula J Studzinski, 72Robert W Studzinski, 89Thomas A Studzinski, 63Jarrett Stueart, 33Suzette M Stuebben, 53Isabel C Stuebe, 82

Lisa Studzinski Phones & Addresses

  • 14801 Sparrow Dr, Utica, MI 48315 (586) 532-1836
  • Shelby Township, MI
  • Collierville, TN
  • Wappingers Falls, NY
  • Warren, MI
  • Beacon, NY

Work

Position: Professional/Technical

Education

Degree: Associate degree or higher

Emails

c***[email protected]

Publications

Us Patents

Method For Controlling Of Certain Second Phases In Aluminum Nitride

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US Patent:
62003739, Mar 13, 2001
Filed:
May 13, 1999
Appl. No.:
9/311811
Inventors:
Richard A. Bates - Wappingers Falls NY
Carla N. Cordero - Essex Junction VT
Benjamin V. Fasano - New Windsor NY
David B. Goland - Sopot, PL
Robert Hannon - Wappingers Falls NY
Lester W. Herron - Hopewell Junction NY
Gregory M. Johnson - Poughkeepsie NY
Andrew Reitter - Poughkeepsie NY
Subhash L. Shinde - Cortland Manor NY
Lisa Studzinski - Wappingers Falls NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
B32B 1700
US Classification:
106 985
Abstract:
Electronic packages made with a high area percent coverage of blanket metal may be prone to certain kinds of ceramic defects. In aluminum nitride, these defects may be related to decomposition of the liquid sintering aid. In this experiment, unique additions to the metallization prevented the formation of certain ceramic defects. Our approach involves a unique composition used in an existing process.

Structure And Process For Making Substrate Packages For High Frequency Application

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US Patent:
62912720, Sep 18, 2001
Filed:
Dec 23, 1999
Appl. No.:
9/471563
Inventors:
Ajay P. Giri - Poughkeepsie NY
John U. Knickerbocker - Hopewell Junction NY
David C. Long - Wappingers Falls NY
Subhash L. Shinde - Cortlandt Manor NY
Lisa M. Studzinski - Collierville TN
Rao V. Vallabhaneni - Hopewell Junction NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 2144
H01L 2148
H01L 2150
US Classification:
438121
Abstract:
A process for fabricating a microelectronic structure. The process comprises processing a metal carrier having a top surface and a bottom surface, wherein the top surface and the bottom surface are processed to promote adhesion, forming a dielectric layer around the metal carrier, wherein the dielectric layer substantially covers the top surface and the bottom surface of the metal carrier, and applying a first patterned layer of conductive material to the microelectronic structure. In one preferred embodiment, the process further comprises comprising sintering the metal carrier, the dielectric layer, and the first patterned layer of conductive material. In one preferred embodiment, the process further comprises forming a via hole through the metal carrier before the forming of the dielectric layer around the metal carrier, wherein the forming of the dielectric layer comprises forming the dielectric layer inside the via hole.

Method For The Controlling Of Certain Second Phases In Aluminum Nitride

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US Patent:
63065282, Oct 23, 2001
Filed:
May 13, 1999
Appl. No.:
9/311812
Inventors:
Richard A. Bates - Wappingers Falls NY
Carla N. Cordero - Essex Junction VT
Benjamin V. Fasano - New Windsor NY
David B. Goland - Sopot, PL
Robert Hannon - Wappingers Falls NY
Lester W. Herron - Hopewell Junction NY
Gregory M. Johnson - Poughkeepsie NY
Andrew Reitter - Poughkeepsie NY
Subhash L. Shinde - Cortland Manor NY
Lisa Studzinski - Wappingers Falls NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
B32B 1800
C04B 35581
US Classification:
428701
Abstract:
Electronic packages made with a high area percent coverage of blanket metal may be prone to certain kinds of ceramic defects. In aluminum nitride, these defects may be related to decomposition of the liquid sintering aid. In this experiment, unique additions to the metallization prevented the formation of certain ceramic defects. Our approach involves a unique composition used in an existing process.

Method For Flat Firing Aluminum Nitride/Tungsten Electronic Modules

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US Patent:
59320435, Aug 3, 1999
Filed:
Mar 18, 1997
Appl. No.:
8/819928
Inventors:
Richard Allen Bates - Wappingers Falls NY
Carla Natalia Cordero - Colchester VT
Benjamin Vito Fasano - New Windsor NY
David Brian Goland - Sopot, PL
Robert Hannon - Wappingers Falls NY
Lester Wynn Herron - Hopewell Junction NY
Gregory Marvin Johnson - Poughkeepsie NY
Andrew Michael Reitter - Poughkeepsie NY
Subhash Laxman Shinde - Ossining NY
Lisa Michelle Studzinski - Wappingers Falls NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
B32B 3120
B32B 1504
US Classification:
156 8915
Abstract:
A method and apparatus for flattening a ceramic body comprised primarily of an aluminum nitride system having a liquid phase additive necessary for low temperature sintering during a firing thereof is disclosed. The ceramic body is referred to as an aluminum nitride multilayer ceramic (AlN MLC). The method and apparatus include a support tile having a first coating on a contact surface thereof, the AlN MLC for being placed upon the contact surface of the support tile. A load flattening tile having a second coating on a contact surface thereof is provided, the load flattening tile for being placed with its coated surface upon and in contact with the AlN MLC. Lastly, a furnace is provided for heating the support tile, AlN MLC, and load flattening tile at temperatures greater than 1500. degree. C. for an amount of time necessary to flatten the ceramic body to a desired degree of flatness, wherein the first coating and the second coating of the support tile and the load flattening tile, respectively, react with the AlN MLC for quenching the liquid phase of the ceramic body to prevent a sticking of the support tile and the load flattening tile to the AlN MLC during a flattening process.

Method For The Controlling Of Certain Second Phases In Aluminum Nitride

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US Patent:
60046244, Dec 21, 1999
Filed:
Jul 2, 1997
Appl. No.:
8/887375
Inventors:
Richard A. Bates - Wappingers Falls NY
Carla N. Cordero - Essex Junction VT
Benjamin V. Fasano - New Windsor NY
David B. Goland - Sopot, PL
Robert Hannon - Wappingers Falls NY
Lester W. Herron - Hopewell Junction NY
Gregory M. Johnson - Poughkeepsie NY
Andrew Reitter - Poughkeepsie NY
Subhash L. Shinde - Ossining NY
Lisa Studzinski - Wappingers Falls NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
B05D 302
B05D 136
US Classification:
4273761
Abstract:
Electronic packages made with a high area percent coverage of blanket metal may be prone to certain kinds of ceramic defects. In aluminum nitride, these defects may be related to decomposition of the liquid sintering aid. In this experiment, unique additions to the metallization prevented the formation of certain ceramic defects. Our approach involves a unique composition used in an existing process.

Direct Deposit Thin Film Single/Multi Chip Module

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US Patent:
62614673, Jul 17, 2001
Filed:
Oct 27, 1999
Appl. No.:
9/427753
Inventors:
Ajay P. Giri - Poughkeepsie NY
Sundar M. Kamath - Hyde Park NY
Daniel P. O'Connor - Poughkeepsie NY
Rajesh B. Patel - Fremont CA
Herbert I. Stoller - Wappingers Falls NY
Lisa M. Studzinski - Wappingers Falls NY
Paul R. Walling - Lagrangeville NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H05K 302
US Classification:
216 13
Abstract:
A high performance TF-ceramic module for mounting integrated circuit chips thereto and a method of fabricating the module at reduced cost. The substrate includes thin film (TF) layers formed directly on a layered ceramic base. A first thick film wiring layer is formed on or embedded in a top surface of the thick film layered ceramic base using thick film techniques. A first dielectric layer of a polyimide or other organic material, or an insulating material different than the ceramic material is formed on top of the first wiring layer. The dielectric layer may be spun on or sprayed on and baked; vapor deposited; laminated to the ceramic base; or an inorganic layer may be deposited using plasma enhanced chemical vapor deposition (PECVD). Vias are formed through the first dielectric layer. A second wiring layer is formed on the first dielectric layer.

Multi-Layer Ceramic Substrate Having High Tc Superconductor Circuitry

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US Patent:
6002951, Dec 14, 1999
Filed:
Nov 12, 1997
Appl. No.:
8/968191
Inventors:
David B. Goland - Croton-On-Hudson NY
Richard A. Shelleman - Poughkeepsie NY
Subhash L. Shinde - Cortlandt Manor NY
Lisa M. Studzinski - Wappingers Falls NY
Rao V. Vallabhaneni - Wappingers Falls NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 3900
US Classification:
505220
Abstract:
A multilayer ceramic substrate electronic component is provided having high temperature superconductor material circuitry. The high temperature superconductor material is preferably yttrium-barium-copper-oxide and is encased within a noble metal such as silver or gold when forming the surface circuitry or filling of the vias. The noble metal layers preferably have through-openings to enable direct connection of circuitry to the encased superconductor layer. A method is also provided for fabricating such multilayer ceramic substrate electronic components.

Multi-Layer Glass Ceramic Module With Superconductor Wiring

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US Patent:
60965657, Aug 1, 2000
Filed:
Mar 9, 1999
Appl. No.:
9/265438
Inventors:
David B. Goland - Croton-On-Hudson NY
Richard A. Shelleman - Poughkeepsie NY
Subhash L. Shinde - Cortlandt Manor NY
Lisa M. Studzinski - Wappingers Falls NY
Rao V. Vallabhaneni - Wappingers Falls NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 2100
US Classification:
438 2
Abstract:
A multilayer ceramic substrate electronic component is provided having high temperature superconductor material circuitry. The high temperature superconductor material is preferably yttrium-barium-copper-oxide and is encased within a noble metal such as silver or gold when forming the surface circuitry or filling of the vias. The noble metal layers preferably have through-openings to enable direct connection of circuitry to the encased superconductor layer. A method is also provided for fabricating such multilayer ceramic substrate electronic components.
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Lisa M Studzinski from Shelby Township, MI, age ~59 Get Report