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Lisa Shapovalov

from North Potomac, MD
Age ~63
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Also known as:
Yelyzaveta Shapovalova, A Shapovalov
Phone and address:
15535 Owens Glen Ter, Gaithersburg, MD 20878
(240) 731-3310
Related to:
Oleksandr ShapovalovOleksandr Shapovalov, 52Sergiy Shapovalov, 60Valentyna Shapovalova, 31Sergiy Shapovalov, 62Alex Shapovalov, 37
Connected to:
Angelina Shapoval, 49Kristen E Shapovalov, 46Larisa T Shapovalova, 76Mikhail A Shapovalov, 33Nikolay N Shapoval, 77Victoria Y Shapovalova, 49Angela M Shapow, 47David S Shapp, 67Richard A Shapp, 68Brian D Shappee, 55

Lisa Shapovalov Phones & Addresses

  • 15535 Owens Glen Ter, Gaithersburg, MD 20878 (240) 731-3310
  • North Potomac, MD

Work

Company: Target labs, inc. Dec 2015 Position: Software test engineer

Education

Degree: Master of Science, Masters School / High School: State University of Technology Specialities: Engineering

Skills

Testing

Industries

Information Technology And Services

Resumes

Resumes

Lisa Shapovalov Photo 1

Systems Analyst - Westat

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Location:
Washington, DC
Industry:
Information Technology And Services
Work:
Target Labs, Inc.
Software Test Engineer
Ostendo Technologies Mar 2012 - Nov 2015
Senior Electronics Engineer
Oxford Instruments Plasma Technology Limited Apr 2008 - Mar 2012
Electronics Engineer
Technologies and Devices International Inc. Dec 2000 - Apr 2008
Electronics Engineer
Dec 2000 - Apr 2008
Systems Analyst - Westat
Education:
State University of Technology
Master of Science, Masters, Engineering
Skills:
Testing

Publications

Us Patents

Method For Substrate Pretreatment To Achieve High-Quality Iii-Nitride Epitaxy

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US Patent:
20130337639, Dec 19, 2013
Filed:
Jun 26, 2012
Appl. No.:
13/533812
Inventors:
Vladimir Ivantsov - Adelphi MD, US
Anna Volkova - Gaithersburg MD, US
Lisa Shapovalov - Gaithersburg MD, US
Alexander Syrkin - Montgomery Village MD, US
Philippe Spiberg - Laguna Beach CA, US
Hussein S. El-Ghoroury - Carlsbad CA, US
Assignee:
OSTENDO TECHNOLOGIES, INC. - Carlsbad CA
International Classification:
H01L 21/205
US Classification:
438479, 438478, 257E21101
Abstract:
The present invention relates to a method for producing a modified surface of a substrate that stimulates the growth of epitaxial layers of group-III nitride semiconductors with substantially improved structural perfection and surface flatness. The modification is conducted outside or inside a growth reactor by exposing the substrate to a gas-product of the reaction between hydrogen chloride (HCl) and aluminum metal (Al). As a single-step or an essential part of the multi-step pretreatment procedure, the modification gains in coherent coordination between the substrate and group-III nitride epitaxial structure to be deposited. Along with epilayer, total epitaxial structure may include buffer inter-layer to accomplish precise substrate-epilayer coordination. While this modification is a powerful tool to make high-quality group-III nitride epitaxial layers attainable even on foreign substrates having polar, semipolar and nonpolar orientation, it remains gentle enough to keep the surface of the epilayer extremely smooth. Various embodiments are disclosed.

Hvpe Apparatus And Methods For Growth Of P-Type Single Crystal Group Iii Nitride Materials

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US Patent:
8647435, Feb 11, 2014
Filed:
Oct 11, 2007
Appl. No.:
11/871099
Inventors:
Vladimir A. Dmitriev - Gaithersburg MD, US
Oleg V. Kovalenkov - Montgomery Village MD, US
Vladimir Ivantsov - Beltsville MD, US
Lisa Shapovalov - Gaithersburg MD, US
Alexander L. Syrkin - Montgomery Village MD, US
Anna Volkova - Gaithersburg MD, US
Vladimir Sizov - Gaithersburg MD, US
Alexander Usikov - Gaithersburg MD, US
Vitali A. Soukhoveev - Gaithersburg MD, US
Assignee:
Ostendo Technologies, Inc. - Carlsbad CA
International Classification:
C30B 21/02
US Classification:
117106, 117 89, 117105, 117109
Abstract:
HVPE reactors and methods for growth of p-type group III nitride materials including p-GaN. A reaction product such as gallium chloride is delivered to a growth zone inside of a HVPE reactor by a carrier gas such as Argon. The gallium chloride reacts with a reactive gas such as ammonia in the growth zone in the presence of a magnesium-containing gas to grow p-type group III nitride materials. The source of magnesium is an external, non-metallic compound source such as Cp2Mg.
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Lisa Shapovalov from North Potomac, MD, age ~63 Get Report