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Lingyun Miao

from Fremont, CA
Age ~48
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Also known as:
Miao Lingyun
Phone and address:
2843 Sterne Pl, Fremont, CA 94555
Connected to:
Andrew Miao, 76Chao Miao, 39Darryl C Miao, 49Elliot T Miao, 49Graham G Miao, 60Kai Miao, 44Lee Miao, 79Lina Miao, 46Ling Miao, 50Linshi Miao, 52

Lingyun Miao Phones & Addresses

  • 2843 Sterne Pl, Fremont, CA 94555
  • Rochester, NY

Work

Company: Western digital Sep 2008 Position: Advanced process integration

Education

Degree: PhD School / High School: University of Rochester 2008 to 2011 Specialities: Optoelectronics - Electrical Engineering

Skills

Semiconductors • Silicon • Cmos • Thin Films • Process Integration • Failure Analysis • Yield • Optoelectronics • Design of Experiments • Jmp • Nanotechnology • R&D • Mems • Project Management • Product Launch • Cross Functional Team Leadership • Vendor Management

Languages

English • Mandarin

Interests

Social Services • Children • Education • Environment • Science and Technology • Health

Industries

Semiconductors

Resumes

Resumes

Lingyun Miao Photo 1

Senior Staff Engineer

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Location:
San Francisco, CA
Industry:
Semiconductors
Work:
Western Digital since Sep 2008
Advanced Process Integration
Systems on Silicon Manufacturing Company Sep 2005 - Jun 2006
Process Integration Senior Engineer, 0.25/0.18/0.13 CMOS
Chartered Semiconductor Dec 2004 - Jul 2005
Yield Enhancement Engineer, HV BJT
Institute of Materials Research and Engineering Oct 2001 - Oct 2004
Research Officer, Optoelectronics Cluster
Education:
University of Rochester 2008 - 2011
PhD, Optoelectronics - Electrical Engineering University of Rochester 2006 - 2008
Master of Science, Electrical and Computer Engineering Massachusetts Institute of Technology 1999 - 2001
Master of Engineering (Dual Degree), Materials Science and Engineering National University of Singapore 1999 - 2001
Master of Engineering (Dual Degree), Materials Science and Engineering Tsinghua University 1994 - 1999
Bachelor of Engineering, Thermal Engineering
Skills:
Semiconductors
Silicon
Cmos
Thin Films
Process Integration
Failure Analysis
Yield
Optoelectronics
Design of Experiments
Jmp
Nanotechnology
R&D
Mems
Project Management
Product Launch
Cross Functional Team Leadership
Vendor Management
Interests:
Social Services
Children
Education
Environment
Science and Technology
Health
Languages:
English
Mandarin

Publications

Us Patents

Method And System For Providing A Magnetic Recording Pole Having A Dual Sidewall Angle

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US Patent:
8563146, Oct 22, 2013
Filed:
Jun 27, 2011
Appl. No.:
13/169710
Inventors:
Jinqiu Zhang - Fremont CA, US
Ying Hong - Los Gatos CA, US
Hai Sun - Milpitas CA, US
Hongping Yuan - Fremont CA, US
Guanghong Luo - Fremont CA, US
Xiaoyu Yang - Union City CA, US
Hongmei Han - Fremont CA, US
Lingyun Miao - Fremont CA, US
Assignee:
Western Digital (Fremont), LLC - Fremont CA
International Classification:
G11B 5/33
US Classification:
428800, 428810, 428812, 428815
Abstract:
A method for fabricating a magnetic transducer having an air-bearing surface (ABS). An underlayer having a first and second regions and a bevel connecting these regions is provided. The first region is thicker and closer to the ABS than the second region. An intermediate layer conformal with the underlayer is provided. A hard mask layer having a top surface perpendicular to the ABS is formed on the intermediate layer. Part of the hard mask and intermediate layers are removed to provide a trench. The trench has a bottom surface and sidewalls having a first angle between the bottom surface and the intermediate layer and a second angle corresponding to the hard mask layer. A pole is provided in the trench. The pole has a pole tip, a yoke distal, and a bottom bevel. At least the yoke includes sidewalls having sidewall angles corresponding to the first and second angles.

Micromachined Ultrasound Transducer With Pedestal

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US Patent:
20220280972, Sep 8, 2022
Filed:
Mar 3, 2022
Appl. No.:
17/685991
Inventors:
Jianwei Liu - Fremont CA, US
Lingyun Miao - Fremont CA, US
Victor L. Pushparaj - Milpitas CA, US
Nikhil Apte - San Jose CA, US
International Classification:
B06B 1/02
B81B 3/00
Abstract:
An ultrasonic transducer is described. The ultrasonic transducer comprises a membrane and a substrate disposed opposite the membrane such that a cavity is formed therebetween. The substrate comprises an electrode region and pedestals protruding from a surface of the substrate and having a height greater than a height of the electrode region, the pedestals being electrically isolated from the electrode region.

Capacitive Micromachined Ultrasonic Transducers (Cmuts) Having Non-Uniform Pedestals

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US Patent:
20220283121, Sep 8, 2022
Filed:
Mar 3, 2022
Appl. No.:
17/686045
Inventors:
Lingyun Miao - Fremont CA, US
Sarp Satir - San Francisco CA, US
International Classification:
G01N 29/24
B06B 1/02
Abstract:
An ultrasound device is described. The ultrasound device comprises a capacitive micromachined ultrasonic transducer (CMUT). The CMUT comprises a membrane, a substrate, a cavity disposed between the membrane and the substrate, wherein the cavity comprises a bottom surface adjacent to the substrate, and non-uniform pedestals protruding from the bottom surface of the cavity into the cavity and towards the membrane.

Ultrasonic Transducer Array Having Varying Cavity Diameter Profile

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US Patent:
20210361260, Nov 25, 2021
Filed:
May 21, 2021
Appl. No.:
17/326938
Inventors:
Lingyun Miao - Fremont CA, US
Sarp Satir - San Francisco CA, US
Assignee:
Butterfly Network, Inc. - Guilford CT
International Classification:
A61B 8/00
B06B 1/02
A61B 8/08
Abstract:
An ultrasonic transducer array includes a plurality of functional micromachined ultrasonic transducers (MUTs), each having a cavity of a first diameter. One or more groups of non-functional MUTs are disposed about a perimeter of the functional MUTs, the one or more groups of non-functional MUTs having a cavity of a second diameter that is smaller than the first diameter.

Bottom Electrode Material Stack For Micromachined Ultrasonic Transducer Devices

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US Patent:
20210285917, Sep 16, 2021
Filed:
Mar 10, 2021
Appl. No.:
17/198174
Inventors:
Jianwei Liu - Fremont CA, US
Lingyun Miao - Fremont CA, US
Victor L. Pushparaj - Milpitas CA, US
Assignee:
Butterfly Network, Inc. - Guilford CT
International Classification:
G01N 29/24
A61B 8/00
B06B 1/02
B81B 7/00
B81C 1/00
Abstract:
An ultrasonic transducer device includes a bottom electrode layer of a transducer cavity disposed over a substrate. The bottom electrode layer includes a bottom layer of a first type metal; a top layer of the first type metal; a second type metal disposed between the bottom layer and the top layer; and at least one intermediate layer of the first type metal disposed between the bottom layer and the top layer, the at least one intermediate layer configured so as to define at least two discrete layers of the second type metal.

Micromachined Ultrasonic Transducer Devices Having Truncated Circle Shaped Cavities

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US Patent:
20210038193, Feb 11, 2021
Filed:
Aug 7, 2020
Appl. No.:
16/988125
Inventors:
- Guilford CT, US
Lingyun Miao - Fremont CA, US
Sarp Satir - San Francisco CA, US
International Classification:
A61B 8/00
B06B 1/06
H04R 31/00
Abstract:
An ultrasonic transducer device is provided. In some embodiments, the ultrasonic transducer device includes a substrate having a membrane support layer formed on a bottom cavity layer, and an opening in the membrane support layer so as to form a transducer cavity. In some embodiments, the opening comprises a truncated circle shape.

Segmented Getter Openings For Micromachined Ultrasound Transducer Devices

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US Patent:
20200324318, Oct 15, 2020
Filed:
Apr 9, 2020
Appl. No.:
16/844837
Inventors:
Jianwei Liu - Fremont CA, US
Lingyun Miao - Fremont CA, US
Assignee:
Butterfly Network, Inc. - Guilford CT
International Classification:
B06B 1/02
B81B 7/00
B81C 1/00
G01N 29/24
Abstract:
An ultrasonic transducer device includes a bottom electrode layer of a transducer cavity disposed over a substrate, and a plurality of vias that electrically connect the bottom electrode layer with the substrate. A bottom cavity layer is disposed over the bottom electrode layer, and one or more openings are formed in the bottom cavity layer so as to expose a region of the bottom electrode layer, wherein locations of the one or more openings are segments that are disposed proximate an outer perimeter of the transducer cavity and substantially correspond to locations where the plurality of vias are not disposed directly beneath.

Bottom Electrode Via Structures For Micromachined Ultrasonic Transducer Devices

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US Patent:
20200324319, Oct 15, 2020
Filed:
Apr 9, 2020
Appl. No.:
16/844857
Inventors:
Lingyun Miao - Fremont CA, US
Jianwei Liu - Fremont CA, US
Assignee:
Butterfly Network, Inc. - Guilford CT
International Classification:
B06B 1/02
B81B 3/00
B81C 1/00
Abstract:
A ultrasonic transducer device includes a transducer bottom electrode layer disposed over a substrate, and a plurality of vias that electrically connect the bottom electrode layer with the substrate, wherein substantially an entirety of the plurality of vias are disposed directly below a footprint of a transducer cavity. Alternatively, the transducer bottom electrode layer includes a first metal layer in contact with the plurality of vias and a second metal layer formed on the first metal layer, the first metal layer including a same material as the plurality of vias.
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Lingyun Miao from Fremont, CA, age ~48 Get Report