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Ling F Chen

from San Bruno, CA
Age ~36
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Also known as:
Ling Feng Chen, Ling Si Chen, Lingfeng Chen, Feng Chen Ling, Chen Lingfeng
Related to:
John Chen, 47Alexandra Chou, 42Si Y Chen, 63Ching L Chou, 71Fo Y Zhang, 59Mary Yang Chou, 71Josephine Chou, 39S I ChenDanny Chou, 71
Connected to:
Abre G Chen, 65Adele Chen, 52Adeline K Chen, 39Ai M Chen, 60Ai C Chen, 79Aiping Chen, 63Alen Y Chen, 68Alma Chen, 29Amanda Chen, 44Amanda T Chen, 63

Ling Chen Phones & Addresses

  • San Bruno, CA
  • Fremont, CA
  • San Jose, CA
  • Hayward, CA
  • Millbrae, CA

Professional Records

Medicine Doctors

Ling Chen Photo 1

Dr. Ling P Chen - MD (Doctor of Medicine)

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Procedures:
Urinary Tract Infection
Hysteroscopy
Hysterectomy
Pelvic Surgery
Tubal Ligation
Prenatal Care & Counseling
Gynecological Surgery
Diagnosis & Treatment Of Sexually Transmitted Diseases (Std's or Sti's)
Pregnancy or Ob (Obstetric) Care
Woman's Health & Wellness
Hospitals:
Ling P Chen MD
2505 Samaritan Dr Suite 107, San Jose, CA 95124

Good Samaritan Hospital
2425 Samaritan Drive, San Jose, CA 95124
Education:
Medical Schools
Case Western Reserve University School Of Medicine
Ling Chen Photo 2

Ling P. Chen

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Specialties:
Obstetrics & Gynecology
Work:
Ling P Chen MD
2505 Samaritan Dr STE 107, San Jose, CA 95124
(408) 358-8852 (phone), (408) 358-8303 (fax)
Education:
Medical School
Case Western Reserve University School of Medicine
Graduated: 1992
Procedures:
Cesarean Section (C-Section)
Cystoscopy
D & C Dilation and Curettage
Delivery After Previous Caesarean Section
Hysterectomy
Myomectomy
Oophorectomy
Ovarian Surgery
Tubal Surgery
Vaccine Administration
Vaginal Delivery
Vaginal Repair
Conditions:
Abnormal Vaginal Bleeding
Breast Disorders
Conditions of Pregnancy and Delivery
Endometriosis
Female Infertility
Languages:
Chinese
English
Description:
Dr. Chen graduated from the Case Western Reserve University School of Medicine in 1992. She works in San Jose, CA and specializes in Obstetrics & Gynecology. Dr. Chen is affiliated with El Camino Hospital Of Los Gatos and Good Samaritan Hospital.
Ling Chen Photo 3

Ling L. Chen

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Specialties:
Dermatopathology
Work:
Dermatology Associates Of Georgia LLCDermatology Associates Of Georgia
2665 N Decatur Rd STE 650, Decatur, GA 30033
(404) 508-0566 (phone), (404) 508-0567 (fax)
Education:
Medical School
Lanzhou Med Coll, Lanzhou City, Gansu, China
Graduated: 1982
Languages:
English
Description:
Dr. Chen graduated from the Lanzhou Med Coll, Lanzhou City, Gansu, China in 1982. She works in Decatur, GA and specializes in Dermatopathology.
Ling Chen Photo 4

Ling Ping Chen

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Specialties:
Obstetrics & Gynecology
Gynecology
Obstetrics
Education:
Case Western Reserve University(1992)
Ling Chen Photo 5

Ling P Chen, San Jose CA

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Specialties:
OB-GYN
Address:
2505 Samaritan Dr, San Jose, CA 95124
Education:
Case Western Reserve University, School of Medicine - Doctor of Medicine
University of California-Davis Medical Center - Internship - Obstetrics and Gynecology
Board certifications:
American Board of Obstetrics and Gynecology Certification in Obstetrics & Gynecology

Business Records

Name / Title
Company / Classification
Phones & Addresses
Ling P. Chen
President
LING P. CHEN, M.D. MEDICAL CORPORATION, INC
Medical Doctor's Office
2505 Samaritan Dr STE 107, San Jose, CA 95124
(408) 358-8852
Ling S. Chen
President
LTC DESIGN GROUP
Architect
100 Bush St STE 410, San Francisco, CA 94104
(415) 348-1220, (415) 348-8780
Ling Shen Chen
General Partner
Ling Yuen Limited A California Limited
Business Services at Non-Commercial Site
364 Dolphin Isle, San Mateo, CA 94404
Ling Chen
Shih Chen 979 Ponderosa, LLC
Eating Place
1300 Clay St, Oakland, CA 94612
10069 Oakleaf Pl, Cupertino, CA 95014
Ling Shen Chen
Yuen-Ling IV Limited A California Limited Partnership
520 S El Camino, San Mateo, CA 94402
Ling Shen Chen
Ling-Yuen Limited, A California Limited Partnership
364 Dolphin Isle, San Mateo, CA 94404
Ling Shen Chen
Yuen - Ling No. III, Limited, A California Limited Partnership
364 Dolphin Isle, San Mateo, CA 94404
Ling Ping Chen
Ling Chen MD
Obgyn
2505 Samaritan Dr, San Jose, CA 95124
(408) 358-8852

Publications

Us Patents

Deposition Of Copper With Increased Adhesion

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US Patent:
6355106, Mar 12, 2002
Filed:
Nov 3, 2000
Appl. No.:
09/706321
Inventors:
Bo Zheng - San Jose CA
Ling Chen - Sunnyvale CA
Alfred Mak - Union City CA
Mei Chang - Saratoga CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1600
US Classification:
118697, 118696, 118715, 700 1, 700 90, 700 95, 427535, 427533, 427534, 427252, 427253
Abstract:
A method and apparatus for improving the adhesion of a copper layer to an underlying layer on a wafer. The layer of copper is formed over a layer of material on a wafer and the copper layer impacted with ions to improve its adhesion to the underlying layer.

Method And Apparatus For Improved Control Of Process And Purge Material In A Substrate Processing System

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US Patent:
6358323, Mar 19, 2002
Filed:
Jul 21, 1998
Appl. No.:
09/120004
Inventors:
John Schmitt - Sunnyvale CA
Frank P. Chang - San Jose CA
Xin Shen Guo - Los Altos Hills CA
Ling Chen - Sunnyvale CA
Christophe Marcadal - Santa Clara CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1600
US Classification:
118726, 118715
Abstract:
A deposition system for performing chemical vapor deposition comprising deposition chamber having a lid and a vaporizer attached to the lid is provided. Additionally, one or more valves disposed between the lid and the vaporizer to limit the flow of precursor material to the chamber and to improve purging of a precursor material delivery system attached to the vaporizer. The precursor delivery system has one or more conduction lines. One of the conduction lines is a flexible conduction line in the form of a multiple turn coil having a torsional elasticity suitable for allowing detachment of the lid from the chamber without having to break or disassemble a conduction line. Preferably, the flexible conduction line is a thirty (30) turn coil having a diameter of approximately three (3) inches fabricated from stainless steel tubing. Alternately, the flexible conduction line is made from a permeable membrane material such as a fluorocarbon compound such as TEFLONÂ, a fluorocarbon containing compound or PFA 440-HP which is then encased in a sheath. The sheath is connected to a pressure control unit to allow degassing of the conduction lines and space between the conduction lines and sheath.

Method For Unreacted Precursor Conversion And Effluent Removal

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US Patent:
6402806, Jun 11, 2002
Filed:
Jun 30, 2000
Appl. No.:
09/608659
Inventors:
John Vincent Schmitt - Sunnyvale CA
Ling Chen - Sunnyvale CA
George Michael Bleyle - Fremont CA
Yu Cong - Sunnyvale CA
Alfred Mak - Union City CA
Mei Chang - Saratoga CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C22B 1500
US Classification:
75414, 75639, 4232453, 423240 R, 427253
Abstract:
A hot trap converts unreacted organic metal-film precursor from the exhaust stream of a CVD process. The converted precursor forms a metal film on the surface of the hot trap, thereby protecting hot vacuum pump surfaces from metal build up. A cold trap downstream from the hot trap freezes effluents from the exhaust stream. The metal captured by the hot trap and the effluents captured by the cold trap may then be recycled, rather than being released as environmental emissions.

Chemical Vapor Deposition Of Copper Using Profiled Distribution Of Showerhead Apertures

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US Patent:
6410089, Jun 25, 2002
Filed:
Feb 24, 2000
Appl. No.:
09/513723
Inventors:
Xin Sheng Guo - Los Altos Hills CA
Keith Koai - Los Gatos CA
Ling Chen - Sunnyvale CA
Mohan K. Bhan - Cupertino CA
Bo Zheng - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1680
US Classification:
427250, 427252, 118715
Abstract:
A showerhead used for dispensing gas over a wafer in chemical vapor deposition (CVD), especially for CVD of copper in a thermal process using a precursor such as HFAC-Cu-TMVS. The patterns of holes is tailored to compensate for thermal and other effects, in particular by increasing the density of holes toward the periphery of the wafer in three or more zones. Such a variable pattern is particularly useful for liquid precursors that are atomized in a carrier gas, in which case a second perforated plate in back of the showerhead face can be eliminated, thereby reducing the flow impedance and the required pressure of the liquid-entrained gas, which tends to deposit out at higher pressures. The reduced flow impedance is particularly useful for CVD of copper.

Metaserver For A Multimedia Distribution Network

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US Patent:
6412004, Jun 25, 2002
Filed:
Mar 27, 1997
Appl. No.:
08/826480
Inventors:
Ling Tony Chen - Cupertino CA
Dawson Frank Dean - Piedmont CA
Assignee:
Microsoft Corporation - Redmond WA
International Classification:
G06F 1516
US Classification:
709226, 709203, 709219, 709231
Abstract:
A metaserver for managing the delivery of multimedia streams from, a plurality of multimedia servers to multiple clients over a diverse network is disclosed. The metaserver allows one to eliminate the bottleneck problem associated with the limited speed of a single multimedia server, reduce the network congestion and increase the fault tolerance of the whole system.

Apparatus For Aligning A Wafer

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US Patent:
6436192, Aug 20, 2002
Filed:
Jan 11, 2000
Appl. No.:
09/481055
Inventors:
Ling Chen - Sunnyvale CA
Joseph Yudovsky - Palo Alto CA
Ying Yu - Cupertino CA
Lawrence C. Lei - Milpitas CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1600
US Classification:
118696, 118728, 118500
Abstract:
A method for aligning a wafer on a support member within a vacuum chamber includes increasing the pressure within the vacuum chamber to at least about 1 Torr before aligning the wafer. The wafer is introduced into the vacuum chamber on the support member, the pressure is increased to at least about one Torr, and the support member is lifted into a shadow ring that has a frustoconical inner cavity constructed to funnel the wafer to a centered, aligned position.

Method Of Using A Barrier Sputter Reactor To Remove An Underlying Barrier Layer

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US Patent:
6498091, Dec 24, 2002
Filed:
Nov 1, 2000
Appl. No.:
09/704161
Inventors:
Ling Chen - Sunnyvale CA
Seshadri Ganguli - Sunnyvale CA
Wei Cao - Milpitas CA
Christophe Marcadal - Santa Clara CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 214763
US Classification:
438627, 438643, 438653, 438685, 438687, 438694, 438695, 438696, 438707, 438763
Abstract:
A method and resultant structure of forming barrier layers in a via hole extending through an inter-level dielectric layer. A first barrier layer of TiSiN is conformally coated by chemical vapor deposition onto the bottom and sidewalls of the via holes and in the field area on top of the dielectric layer. A single plasma sputter reactor is used to perform two steps. In the first step, the wafer rather than the target is sputtered with high energy ions to remove the barrier layer from the bottom of the via but not from the sidewalls. In the second step, a second barrier layer, for example of Ta/TaN, is sputter deposited onto the via bottom and sidewalls. The two steps may be differentiated by power applied to the target, by chamber pressure, or by wafer bias. The second step may include the simultaneous removal of the first barrier layer from the via bottom and sputter deposition of the second barrier layer onto the via sidewalls. Chamber conditions in the first step, including balancing neutrals and ions, may be controlled to remove the first barrier layer from the via bottom while leaving it on the more exposed the field area.

Barrier Layer Structure For Copper Metallization And Method Of Forming The Structure

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US Patent:
6562715, May 13, 2003
Filed:
Aug 9, 2000
Appl. No.:
09/635738
Inventors:
Ling Chen - Sunnyvale CA
Christophe Marcadal - Santa Clara CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1418
US Classification:
438643, 438653, 438679, 438680, 438685, 438687, 427 97, 427250, 427255394, 427255395, 4272557, 427305, 20419217, 205157, 205184, 205186, 205187
Abstract:
A barrier layer structure and a method of forming the structure. The barrier layer structure comprises a bilayer, with a first layer formed by chemical vapor deposition and a second layer formed by physical vapor deposition. The first barrier layer comprises a metal or a metal nitride and the second barrier layer comprises a metal or a metal nitride. The barrier bilayer is applicable to copper metallization.
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Ling F Chen from San Bruno, CA, age ~36 Get Report