Lindley T Specht

48046388, Feb 14, 1989

Mar 28, 1988

7/175637

William E. Hoke - Wayland MA
Lindley T. Specht - Waltham MA

Raytheon Company - Lexington MA

H01L 2120

437 81

A method for growing a Group II-IV epitaxial layer over a substrate is described. The method includes the steps of directing a plurality of vapor flows towards the substrate, including a Group II organic vapor, a Group VI organic vapor, and a Group II elemental mercury vapor. At least one of the Group II organic vapor and Group VI organic vapor has organic groups which sterically repulse the second one of the Group II and Group VI organic vapors or which provide electron transfer to the Group II atom or electron withdrawal from the Group VI atom. With the particular arrangements described, it is believed that substantially independent pyrolsis of the Group II organic vapor is provided over the growth region of the substrate, and accordingly, Group II depletions such as cadmium depletion in the epitaxial films provided over the substrate is substantially reduced.

48866830, Dec 12, 1989

Jun 20, 1986

6/876608

William E. Hoke - Wayland MA
Lindley T. Specht - Waltham MA
Ralph Korenstein - Framingham MA

Raytheon Company - Lexington MA

C22C 1600

427252

A method for growing a Group II-VI epitaxial layer on a substrate is described. The method includes the steps of directing a plurality of vapor flows toward the substrate including a Group II metalorganic vapor, a Group VI organic vapor, with said Group VI organic having an organic group bonded to the Group VI element selected from the group consisting of a secondary alkyl, a tertiary alkyl, an allyl, a cycloallyl, and a benzyl, and a Group II elemental metal vapor. The directed flows of Group II metalorganic vapor, Group VI organic vapor and Group II metal vapor are chemically reacted to provide the epitaxial layer.