Albert A. Burk - Murrysville PA Linard M. Thomas - Saltsburg PA
Assignee:
Northrop Grumman Corporation - Los Angeles CA
International Classification:
C23C 1600
US Classification:
118715
Abstract:
A ceiling arrangement for a high temperature epitaxial growth reactor in which silicon carbide epitaxial layers may be grown. The ceiling includes an upper layer of carbon foam and a lower layer of graphite bonded thereto. A support structure for the ceiling is coupled to a nozzle assembly, holding a gas delivering nozzle. The support structure has a lower flange portion which includes an upwardly extending projection defining a knife edge upon which the ceiling rests. The arrangement minimizes unwanted heat transfer from the ceiling to the nozzle assembly and nozzle.