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Lin Zhang

from Sunnyvale, CA
Age ~49
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Also known as:
Li N Zhang, Lin Zang, Zhang Lin
Phone and address:
1488 Falcon Ct, Sunnyvale, CA 94087
(510) 673-9656
Related to:
Xin LiYuming Ming Wu, 58Mengyun Zhang, 34Dongfeng Zhang, 65Jing Cao, 47Baomin Cao
Connected to:
Aaron N Zhang, 60Adelaide X Zhang, 48Aiai Zhang, 38Aijun Zhang, 70Airong Zhang, 72Alfred Zhang, 31Anderson Zhang, 34Angeline Zhang, 36Anli Zhang, 68Anming Zhang, 64

Lin Zhang Phones & Addresses

  • 1488 Falcon Ct, Sunnyvale, CA 94087 (510) 673-9656
  • 2640 Dole St, Honolulu, HI 96822
  • 2724 Kolo Pl, Honolulu, HI 96826
  • 1808 Waiola St, Honolulu, HI 96826
  • Fremont, CA
  • Alameda, CA

Professional Records

Medicine Doctors

Lin Zhang Photo 1

Lin Zhang

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Specialties:
Neurology, Neuromuscular Medicine
Work:
UC Davis Medical GroupUC Davis Medical Center Neurology Clinic
3160 Folsom Blvd STE 2100, Sacramento, CA 95816
(916) 734-7777 (phone), (916) 451-2010 (fax)
Education:
Medical School
West China Univ of Med Sci, Chengdu City, Sichuan, China
Graduated: 1983
Procedures:
Lumbar Puncture
Neurological Testing
Sleep and EEG Testing
Conditions:
Hemorrhagic stroke
Parkinson's Disease
Alzheimer's Disease
Dementia
Diabetic Peripheral Neuropathy
Languages:
Chinese
English
Description:
Dr. Zhang graduated from the West China Univ of Med Sci, Chengdu City, Sichuan, China in 1983. He works in Sacramento, CA and specializes in Neurology and Neuromuscular Medicine. Dr. Zhang is affiliated with UC Davis Medical Center.
Lin Zhang Photo 2

Lin Zhang

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Specialties:
Hematology/Oncology
Work:
Columbus VA Outpatient Clinic
420 N James Rd FL 2, Columbus, OH 43219
(614) 257-5200 (phone), (614) 257-5856 (fax)

Chalmers P Wylie VA Ambulatory Care
420 N James Rd, Columbus, OH 43219
(614) 257-5602 (phone), (614) 257-5644 (fax)
Education:
Medical School
West China Univ of Med Sci, Chengdu City, Sichuan, China
Graduated: 1988
Conditions:
Anemia
Arterial Thromboembolic Disease
Bipolar Disorder
Cardiac Arrhythmia
Carpel Tunnel Syndrome
Languages:
English
Description:
Dr. Zhang graduated from the West China Univ of Med Sci, Chengdu City, Sichuan, China in 1988. He works in Columbus, OH and 1 other location and specializes in Hematology/Oncology. Dr. Zhang is affiliated with Cincinnati VA Medical Center.
Lin Zhang Photo 3

Lin Zhang

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Specialties:
Internal Medicine
Hematology
Medical Oncology
Education:
West China University Of Medical Sciences (1988)
Montefiore Medical Center *Internal Medicine
Wake Forest University Baptist Medical Center *Hematology & Oncology

Lawyers & Attorneys

Lin Zhang Photo 4

Lin Zhang - Lawyer

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Licenses:
California - Active 2013
Education:
UC Berkeley SOL Boalt Hall
Foreign School

Business Records

Name / Title
Company / Classification
Phones & Addresses
Lin Zhang
President
BRIGHT OCEANS INTERNATIONAL CORPORATION
Business Services at Non-Commercial Site
1555 Hilltop Ct, Milpitas, CA 95035
1555 Hilltop Dr, Milpitas, CA 95035
Lin Zhang
Manager
Parkview Heights LLC
Lin Zhang
Chief Engineer
NORTH VALLEY RESEARCH, INC
Engineering Services
1879 Lundy Ave SUITE 223, San Jose, CA 95131
1625 The Alameda, San Jose, CA 95126
1565 Deluca Dr, San Jose, CA 95131
Lin Zhang
President
TIANJIN ORIENTAL RUGS (U.S.A.), INC
432 N Canal St SUITE 7, South San Francisco, CA 94080
Lin Zhang
President
NANO FUNDS, LTD
330 Prt Royal Ave, San Mateo, CA 94404
Lin Zhang
President
TECHMASTER INTERNATIONAL INC
PO Box 6098, Moraga, CA 94570
Lin Zhang
President
SWIFT INTERNATIONAL GROUP, INC
347 Anderson Rd, Alameda, CA 94502
Lin Juan Zhang
President
SHANGHAI WINTER GARDEN, INC
Eating Place · Nonclassifiable Establishments
2025 Shattuck Ave, Berkeley, CA 94704
310 Broadway, Millbrae, CA 94030
2450 Trenton Dr, San Bruno, CA 94066
(650) 692-2288

Publications

Us Patents

Nitrogen Treatment Of Polished Halogen-Doped Silicon Glass

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US Patent:
6413871, Jul 2, 2002
Filed:
Jun 22, 1999
Appl. No.:
09/337983
Inventors:
Hichem MSaad - Santa Clara CA
Derek R. Witty - Fremont CA
Manoj Vellaikal - Santa Clara CA
Lin Zhang - San Jose CA
Yaxin Wang - Fremont CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 213105
US Classification:
438692, 117569, 117574, 117579, 438690, 438691, 438694, 438759, 438761, 438762, 438763, 438784
Abstract:
A film of fluorine-doped silicon glass (âFSGâ) is exposed to a nitrogen-containing plasma to nitride a portion of the FSG film. In one embodiment, the FSG film is chemically-mechanically polished prior to nitriding. The nitriding process is believed to scavenge moisture and free fluorine from the FSG film. The plasma can heat the FSG film to about 400Â C. for about one minute to incorporate about 0. 4 atomic percent nitrogen to a depth of nearly a micron. Thus, the nitriding process can passivate the FSG film deeper than a via depth.

Method Of Depositing A Nitrogen-Doped Fsg Layer

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US Patent:
6468927, Oct 22, 2002
Filed:
May 19, 2000
Appl. No.:
09/574271
Inventors:
Lin Zhang - San Jose CA
Wen Ma - Milpitas CA
Zhuang Li - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 2131
US Classification:
438779, 438763, 438778, 438783, 438795, 438958
Abstract:
Gap-fill and damascene methods are disclosed for depositing an insulating thin film of nitrofluorinated silicate glass on a substrate in a process chamber. A high-density plasma, generated from a gaseous mixture of silicon-, fluorine-, oxygen-, and nitrogen-containing gases, deposits a layer of nitrofluorinated silicate glass onto the substrate. For gap-fill applications, the substrate is biased with a bias power density between 4. 8 and 11. 2 W/cm and the ratio of flow rate for the oxygen-containing gas to the combined flow rate for all silicon-containing gases in the process chamber is between 1. 0 and 1. 8, preferably between 1. 2 and 1. 4. For damascene applications, the bias power density is less than 3. 2 W/cm , preferably 1. 6 W/cm , and the flow rate ratio is between 1. 2 and 3.

Hdp-Cvd Uniformity Control

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US Patent:
6890597, May 10, 2005
Filed:
May 9, 2003
Appl. No.:
10/435296
Inventors:
Padmanabhan Krishnaraj - San Francisco CA, US
Bruno Geoffrion - San Jose CA, US
Michael S. Cox - Davenport CA, US
Lin Zhang - San Jose CA, US
Bikram Kapoor - Santa Clara CA, US
Anchuan Wang - Fremont CA, US
Zhenjiang Cui - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C016/40
US Classification:
4272481, 42725537, 427355, 438692, 438697, 438788
Abstract:
A combination of deposition and polishing steps are used to permit improved uniformity of a film after the combination of steps. Both the deposition and polishing are performed with processes that vary across the substrate. The combination of the varying deposition and etching rates results in a film that is substantially planar after the film has been polished. In some instances, it may be easier to control the variation of one of the two processes than the other so that the more controllable process is tailored to accommodate nonuniformities introduced by the less controllable process.

Hdp-Cvd Dep/Etch/Dep Process For Improved Deposition Into High Aspect Ratio Features

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US Patent:
6908862, Jun 21, 2005
Filed:
May 3, 2002
Appl. No.:
10/138189
Inventors:
Dongqing Li - Santa Clara CA, US
Xiaolin C. Chen - San Jose CA, US
Lin Zhang - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L021/311
US Classification:
438700, 438666, 438667, 438668, 438672, 438673, 438978, 216 39
Abstract:
A method of depositing a film on a substrate disposed in a substrate processing chamber. The method includes depositing a first portion of the film by forming a high density plasma from a first gaseous mixture flown into the process chamber. The deposition processes is then stopped and part of the deposited first portion of the film is etched by flowing a halogen etchant into the processing chamber. Next, the surface of the etched film is passivated by flowing a passivation gas into the processing chamber, and then a second portion of the film is deposited over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber. In one embodiment the passivation gas consists of an oxygen source with our without an inert gas.

Small Form-Factor Pluggable Bail Latch

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US Patent:
6929403, Aug 16, 2005
Filed:
Feb 10, 2003
Appl. No.:
10/364685
Inventors:
German Arciniegas - Fremont CA, US
Lin Zhang - Fremont CA, US
Assignee:
Opnext, Inc. - Fremont CA
International Classification:
G02B006/38
H01R013/627
US Classification:
385 55, 439352
Abstract:
An optical module having a latching mechanism to allow the module to be latched to a cage of a host system is disclosed. The latching mechanism includes a latch boss that can be engaged by a latch attached to the host cage to capture the module. The latching mechanism also includes a latch key that slides towards the latch boss to disengage the latch from the latch boss. The latch key is moved by a bail that rotates and exerts a force on the latch key by a cam surface.

Deposition-Selective Etch-Deposition Process For Dielectric Film Gapfill

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US Patent:
7081414, Jul 25, 2006
Filed:
May 23, 2003
Appl. No.:
10/445240
Inventors:
Lin Zhang - San Jose CA, US
Xiaolin Chen - San Jose CA, US
DongQing Li - Santa Clara CA, US
Thanh N Pham - San Jose CA, US
Farhad K Moghadam - Saratoga CA, US
Zhuang Li - San Jose CA, US
Padmanabhan Krishnaraj - San Francisco CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/302
US Classification:
438710, 438221, 438706, 438723
Abstract:
A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.

Low Stress Sti Films And Methods

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US Patent:
7244658, Jul 17, 2007
Filed:
Oct 17, 2005
Appl. No.:
11/252400
Inventors:
Ellie Y Yieh - San Jose CA, US
Anchuan Wang - Fremont CA, US
Lin Zhang - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/76
US Classification:
438424, 257374, 257E21545, 257E21546
Abstract:
The present invention generally relates to low compressive stress doped silicate glass films for STI applications. By way of non-limited example, the stress-lowering dopant may be a fluorine dopant, a germanium dopant, or a phosphorous dopant. The low compressive stress STI films will generally exhibit a compressive stress of less than 180 MPa, and preferably less than about 170 MPa. In certain embodiment, the STI films of the invention will exhibit a compressive stress less than about 100 MPa. Further, in certain embodiments, the low compressive stress STI films of the invention will comprise between about 0. 1 and 25 atomic % of the stress-lowering dopant.

Three Cam Bail Latch Device And Method

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US Patent:
7306473, Dec 11, 2007
Filed:
May 31, 2005
Appl. No.:
11/142016
Inventors:
Frank David Yashar - Sunnyvale CA, US
John P. Wai - Los Altos CA, US
Lin Zhang - Fremont CA, US
Assignee:
Opnext, Inc. - Eatontown NJ
International Classification:
H01R 13/627
US Classification:
439352, 439372
Abstract:
The present invention provides a three cam bail latch system and a method for disconnecting an electronic component from a port using the three cam bail latch system.

Isbn (Books And Publications)

Ju Guo Ti Zhi

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Author

Lin Zhang

ISBN #

7500929323

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Lin Zhang from Sunnyvale, CA, age ~49 Get Report