Leonid Olga Tsybeskov

20050248003, Nov 10, 2005

Feb 14, 2005

11/058395

Leonid Tsybeskov - Rockaway NJ, US
Andrei Sirenko - Basking Ridge NJ, US

H01L029/06
H01L021/36

257623000, 257627000, 438763000, 438478000

Methods and devices are provided in which vertically integrated devices are grown in the form of semiconductor (e.g., Ge, GaAs, InGaAs, etc.) one-dimensional nanowires with typical diameter of from about 5 nm to about 50 nm and aspect ratio of about 1:10. In one embodiment a nanometer-scale diameter pillar extending from a silicon substrate is employed as a “seed” for fabricating vertical, one-dimensional hetero-structures (and/or hetero-devices) containing semiconductor materials with lattice and thermal expansion mismatches to silicon.

20140035104, Feb 6, 2014

Jul 31, 2012

13/563222

Alexandre M. BRATKOVSKI - Mountain View CA, US
Leonid Tsybeskov - Rockaway NJ, US

H01L 21/20
H01L 29/16

257616, 438480, 257E29083, 257E2109

In an implementation, a Germanium on insulator apparatus is fabricated by forming a patterned masking layer on a Silicon on insulator (SOI) layer that leaves a portion of the SOI layer exposed, implanting Germanium onto the exposed portion of the SOI layer to form a Silicon-Germanium island, depositing amorphous Germanium over the Silicon-Germanium island and the patterned masking layer, removing the patterned masking layer and the amorphous Germanium that was deposited onto the patterned masking layer to produce a Silicon-Germanium composite stripe, and annealing the Silicon-Germanium composite stripe to crystallize the amorphous Germanium in the Silicon-Germanium composite stripe.

6017773, Jan 25, 2000

Apr 3, 1998

9/054854

Philippe M. Fauchet - Pittsford NY
Leonid Tsybeskov - Rochester NY
Karl D. Hirschmann - Henrietta NY

University of Rochester - Rochester NY

H01L 2120
H01L 3300

438 22

A method of producing light-emitting porous silicon light-emitting diode including forming a porous silicon p+ layer in a p-type silicon wafer, annealing the wafer at 800-950. degree. C. in an atmosphere of inert gas and 1-25% oxygen, depositing a polycrystalline silicon film on the porous silicon layer, and n+ doping a portion of the polycrystalline silicon film.