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Leonid A Bendersky

from Silver Spring, MD
Age ~76
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Also known as:
Leo A Bendersky, Bendersky Leoni, Leonid Y
Related to:
Gabriel Bendersky
Connected to:
Alexander Bendersky, 50Boris Bendersky, 70Roderick D Benders, 45Shaun A Benderson, 43Suzanne S Benderski, 55Alan N Bendesky, 77Karen L Bendeson, 62Amy Bendeth, 52James G Bendetson, 32John T Bendetson, 73

Leonid Bendersky Phones & Addresses

  • Silver Spring, MD
  • 19137 Stedwick Rd, Montgomery Village, MD 20886 (301) 926-5287
  • 18700 Walkers Choice Rd, Montgomery Village, MD 20886
  • Gaithersburg, MD
  • Rockville, MD
  • 19137 Stedwick Dr, Montgomery Village, MD 20886 (301) 926-5287

Work

Company: National institute of standards and technology Nov 1987 Position: Metallurgist

Education

Degree: Doctorates, Doctor of Science School / High School: Technion - Israel Institute of Technology 1976 to 1982 Specialities: Materials Science

Skills

Materials Science • Electron Microscopy • Electrochemistry • Metallurgy • Characterization • Scanning Electron Microscopy • Powder X Ray Diffraction • Nanotechnology • Nanomaterials • Spectroscopy • Metallography • Experimentation • Chemical Engineering • Materials • Tem • Thin Films • Microscopy • R&D • Design of Experiments • Optical Microscopy • Chemistry • Science • Composites • Thermodynamics

Languages

English • Russian • Hebrew

Interests

Kids • Pottery • Exercise • Electronics • Outdoors • Home Improvement • Art • Painting • Music • Sports • Camping • Sculpture • Movies

Emails

l***[email protected]

Industries

Research

Public records

Vehicle Records

Leonid Bendersky

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Address:
19137 Stedwick Dr, Montgomry Vlg, MD 20886
Phone:
(301) 926-5287
VIN:
JM1CR293270141397
Make:
MAZDA
Model:
MAZDA5
Year:
2007

Resumes

Resumes

Leonid Bendersky Photo 1

Metallurgist

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Location:
19137 Stedwick Dr, Montgomery Village, MD 20886
Industry:
Research
Work:
National Institute of Standards and Technology
Metallurgist
Education:
Technion - Israel Institute of Technology 1976 - 1982
Doctorates, Doctor of Science, Materials Science School #2, Tiraspol, Moldova
Leningrad Polytechnique Institute
Skills:
Materials Science
Electron Microscopy
Electrochemistry
Metallurgy
Characterization
Scanning Electron Microscopy
Powder X Ray Diffraction
Nanotechnology
Nanomaterials
Spectroscopy
Metallography
Experimentation
Chemical Engineering
Materials
Tem
Thin Films
Microscopy
R&D
Design of Experiments
Optical Microscopy
Chemistry
Science
Composites
Thermodynamics
Interests:
Kids
Pottery
Exercise
Electronics
Outdoors
Home Improvement
Art
Painting
Music
Sports
Camping
Sculpture
Movies
Languages:
English
Russian
Hebrew

Publications

Us Patents

Intermetallic Titanium-Aluminum-Niobium-Chromium Alloys

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US Patent:
53761936, Dec 27, 1994
Filed:
Jun 23, 1993
Appl. No.:
8/081800
Inventors:
Leonid A. Bendersky - Gaithersburg MD
Assignee:
The United States of America as represented by the Secretary of Commerce - Washington DC
International Classification:
C22C 1400
US Classification:
148421
Abstract:
Novel Ti-Al-Nb-Cr alloys incorporating in their microstructure the hexagonal DO. sub. 19 phase, the omega-type B8. sub. 2 phase, the cubic B2 phase, and, optionally, the orthorhombic O phase. The intermetallic alloys consist essentially of, in atomic percent, about 48-62% Ti, about 28-32% Al, and about 10-20% Nb with Cr, wherein Cr is preferably present at about 4-16% of the total concentration.

High Intermetallic Ti-Al-V-Cr Alloys Combining High Temperature Strength With Excellent Room Temperature Ductility

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US Patent:
53585844, Oct 25, 1994
Filed:
Jul 20, 1993
Appl. No.:
8/093645
Inventors:
Leonid A. Bendersky - Gaithersburg MD
Assignee:
The United States of America as represented by the Secretary of Commerce - Washington DC
International Classification:
C22C 1400
US Classification:
148421
Abstract:
A Ti--Al--V--Cr intermetallic alloy having an atomic percent composition of 5-35 Al, 10-15 (V+Cr), the balance being Ti. The alloy is partially of DO. sub. 19 type and partially of B2 type and has high temperature strength and excellent room temperature ductility. The alloy is produced by arc melting the metallic components Ti, Al and at least one of V and Cr; followed by homogenizing the melted components; solidifying the melted components to form an alloy; hot working the solidified alloy by isothermal forming to form a beta-phase polycrystalline microstructure; transforming the metastable. beta. -phase into a two-phase microstructure; and equilibrating the two-phase microstructure by prolonged annealing.

Heterophase Titanium Aluminides Having Orthorhombic And Omega-Type Microstructures

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US Patent:
51906023, Mar 2, 1993
Filed:
Dec 17, 1991
Appl. No.:
7/808819
Inventors:
Leonid Bendersky - Gaithersburg MD
William J. Boettinger - Monrovia MD
Francis S. Biancaniello - Gaithersburg MD
Assignee:
The United States of America as represented by the Secretary of Commerce - Washington DC
International Classification:
C22C 1400
US Classification:
148669
Abstract:
An alloy comprising titanium, aluminum and niobium has a heterophase micrructure of an orthorhombic, Ti. sub. 2 AlNb, phase and an omega-type, B8. sub. 2, phase. An alloy is annealed to form the heterophase alloy with the orthorhombic and omega-type phases in thermodynamic equilibrium, and then cooled.

Phase Transition Based Resistive Random-Access Memory

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US Patent:
20200388754, Dec 10, 2020
Filed:
Aug 25, 2020
Appl. No.:
17/002583
Inventors:
- West Lafayette IN, US
- Gaithersburg MD, US
Yuqi Zhu - West Lafayette IN, US
Albert V. Davydov - North Potomac MD, US
Sergiy Krylyuk - Montgomery Village MD, US
Leonid A. Bendersky - Montgomery Village MD, US
Assignee:
Purdue Research Foundation - West Lafayette IN
Government of the U.S. as Represented by Secretary of Commerce - Gaithersburg MD
International Classification:
H01L 45/00
G11C 13/00
Abstract:
A method of switching a phase-change device (Device), including changing phase of the Device from a semiconducting 2H phase to a new 2Hphase with a higher conductivity, the Device having an active material with a thickness including a phase transition material to thereby transition the Device from a high resistive state (HRS) to a low resistive state (LRS) by application of a set voltage and further to return the Device from the LRS back to the HRS by application of a reset voltage.

Phase Transition Based Resistive Random-Access Memory

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US Patent:
20190363250, Nov 28, 2019
Filed:
Aug 23, 2018
Appl. No.:
16/110376
Inventors:
- West Lafayette IN, US
- Gaithersburg MD, US
Yuqi Zhu - West Lafayette IN, US
Albert V. Davydov - North Potomac MD, US
Sergiy Krylyuk - Montgomery Village MD, US
Leonid A. Bendersky - Montgomery Village MD, US
Assignee:
Purdue Research Foundation - West Lafayette IN
National Institute of Standards and Technology - Gaithersburg MD
International Classification:
H01L 45/00
G11C 13/00
Abstract:
A method of switching a phase-change device (Device), including changing phase of the Device from a semiconducting 2H phase to a new 2Hd phase with a higher conductivity, the Device having an active material with a thickness including a phase transition material to thereby transition the Device from a high resistive state (HRS) to a low resistive state (LRS) by application of a set voltage and further to return the Device from the LRS back to the HRS by application of a reset voltage.
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Leonid A Bendersky from Silver Spring, MD, age ~76 Get Report