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Leo J Haman

from Cedar Rapids, IA
Age ~63
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Also known as:
Leo James Haman
Phone and address:
757 Estroy Dr NE, Cedar Rapids, IA 52402
(319) 393-5626
Related to:
Joseph Anthony Haman, 53Lana J Haman, 71Mary L Haman, 90
Connected to:
Christine Haman, 76Dennis A Haman, 72Diane Haman, 55Faith A Haman, 53Gerald A Haman, 65Henry F Haman, 65Julia A Haman, 33Robbie E Haman, 61Roger L Haman, 89Tod R Haman, 72

Leo Haman Phones & Addresses

  • 757 Estroy Dr NE, Cedar Rapids, IA 52402 (319) 393-5626
  • Savannah, GA
  • Coralville, IA

Publications

Us Patents

Temperature Stabilized Cmos Oscillator Circuit

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US Patent:
6377130, Apr 23, 2002
Filed:
Sep 12, 2000
Appl. No.:
09/660014
Inventors:
Leo J. Haman - Cedar Rapids IA
Assignee:
Rockwell Collins, Inc. - Cedar Rapids IA
International Classification:
H03B 512
US Classification:
331176, 331186, 331 66, 331158, 331116 FE, 331116 R
Abstract:
A temperature stabilized CMOS oscillator circuit modifies the gain of a CMOS oscillator transistor to cancel the gain variation over temperature using a bias circuit. The bias circuit utilizes a combination of two current mirrors to establish a temperature compensating supply current to a CMOS oscillator transistor. A primary current mirror and a temperature variable resistor establish a current in the current mirror output to the CMOS oscillator transistor. A secondary current mirror and a temperature variable resistor divert current from the primary current mirror over temperature to vary the current mirror output to the CMOS oscillator transistor to compensate for its gain variation.

Rubidium Frequency Standard Control Method And System For Voltage-Controlled Oscillators

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US Patent:
6972631, Dec 6, 2005
Filed:
Dec 18, 2003
Appl. No.:
10/740018
Inventors:
Leo J. Haman - Cedar Rapids IA, US
Assignee:
Rockwell Collins - Cedar Rapids IA
International Classification:
H03L007/26
US Classification:
331 3, 331 14
Abstract:
A rubidium frequency standard control circuit which utilizes an initial sweep hand-off frequency locking process followed by a negative feedback loop for optimization of the stability of the voltage control oscillator employing the rubidium frequency standard.

Temperature Stable Oscillator Circuit Apparatus

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US Patent:
53411129, Aug 23, 1994
Filed:
Jun 9, 1993
Appl. No.:
8/074255
Inventors:
Leo J. Haman - Cedar Rapids IA
Assignee:
Rockwell International Corporation - Seal Beach CA
International Classification:
H03B 512
H03B 536
H03L 102
US Classification:
331116R
Abstract:
A stabilized oscillation circuit includes a bias circuit which controllably biases a bipolar-transistor-driven crystal oscillator circuit. The bipolar-transistor-driven crystal oscillator circuit is a modified version of a conventional transistor-driven oscillator, such as a Hartley, Pierce or Colpitts-type circuit. The bias circuit includes a first current providing a reference current through a Schottky diode and a pair of bipolar transistors. The bipolar-transistor-driven crystal oscillator circuit includes an input and an output, where the input of the bipolar-transistor-driven crystal oscillator circuit is coupled to the bias circuit. The bipolar-transistor-driven crystal oscillator circuit includes a second current through a second bipolar transistor. The second current tracks the reference current so that the output of the bipolar-transistor-driven oscillator circuit is substantially constant over variations in ambient temperature.
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Leo J Haman from Cedar Rapids, IA, age ~63 Get Report