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Lee D Rockford

from Portland, OR
Age ~52
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Also known as:
Lee Dr Rockford, Lee P Rockford, Rockford D Lee
Phone and address:
12885 Foothill Dr, Portland, OR 97225
(503) 213-4311
Related to:
Everett G Maurer, 97Barbara Anderson, 78David SchantzMellisa Stapleton, 48Jerry Stapleton, 56
Connected to:
Joseph J Rockforte, 68Torrey J Rockhead, 46Andrew L Rockhill, 48Jaime L Rockhill, 42Jenna M Rockhill, 39Lee R Rockhill, 59Melissa Rockhill, 43Patricia E Rockhill, 89Peter J Rockhill, 41Shannon J Rockhill, 40

Lee Rockford Phones & Addresses

  • 12885 Foothill Dr, Portland, OR 97225 (503) 213-4311
  • 14688 NW Blackthorne Ln, Portland, OR 97229 (503) 502-2859
  • 1505 57Th Ave, Portland, OR 97221 (503) 224-6621
  • 1505 5Th Ave, Portland, OR 97201
  • 23 Schenck Ave APT 3AC, Great Neck, NY 11021 (516) 313-2309
  • Belchertown, MA
  • Amherst, MA
  • Hillsboro, OR
  • Boston, MA

Work

Company: Intel corporation Position: Senior process engineer

Education

Degree: High school graduate or higher

Industries

Semiconductors

Resumes

Resumes

Lee Rockford Photo 1

Senior Process Engineer

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Location:
Portland, OR
Industry:
Semiconductors
Work:
Intel Corporation
Senior Process Engineer

Publications

Us Patents

Selectively Converted Inter-Layer Dielectric

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US Patent:
6943121, Sep 13, 2005
Filed:
Nov 21, 2002
Appl. No.:
10/302073
Inventors:
Grant M. Kloster - Lake Oswego OR, US
David H. Gracias - Portland OR, US
Lee D. Rockford - Portland OR, US
Peter K. Moon - Portland OR, US
Chris E. Barns - Portland OR, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H01L021/302
H01L021/461
H01L021/31
H01L021/469
US Classification:
438725, 438780, 438781, 438783
Abstract:
An inter-layer dielectric structure and method of making such structure are disclosed. A composite dielectric layer, initially comprising a porous matrix and a porogen, is formed. Subsequent to other processing treatments, the porogen is decomposed and removed from at least a portion of the porous matrix, leaving voids defined by the porous matrix in areas previously occupied by the porogen. The resultant structure has a desirably low k value as a result of the porosity and materials comprising the porous matrix and porogen. The composite dielectric layer may be used in concert with other dielectric layers of varying porosity, dimensions, and material properties to provide varied mechanical and electrical performance profiles.

Low-K Dielectric Film With Good Mechanical Strength

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US Patent:
6964919, Nov 15, 2005
Filed:
Aug 12, 2002
Appl. No.:
10/217966
Inventors:
Grant Kloster - Lake Oswego OR, US
Lee Rockford - Portland OR, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H01L021/4763
H01L021/44
US Classification:
438626, 438627, 438637, 438645, 438648, 438687
Abstract:
The present invention discloses a method including providing a substrate; forming a dielectric over the substrate, the dielectric having a k value of about 2. 5 or lower, the dielectric having a Young's modulus of elasticity of about 15 GigaPascals or higher; forming an opening in the dielectric; and forming a conductor in the opening. The present invention further discloses a structure including a substrate; a dielectric located over the substrate, the dielectric having a k value of 2. 5 or lower, the dielectric having a Young's modulus of elasticity of about 15 GigaPascals or higher; an opening located in the dielectric; and a conductor located in the opening.

Method Of Forming A Selectively Converted Inter-Layer Dielectric Using A Porogen Material

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US Patent:
7018918, Mar 28, 2006
Filed:
Nov 3, 2003
Appl. No.:
10/701251
Inventors:
Grant M. Kloster - Lake Oswego OR, US
Kevin P. O'brien - Portland OR, US
Michael D. Goodner - Hillsboro OR, US
David H. Gracias - Portland OR, US
Lee D. Rockford - Portland OR, US
Peter K. Moon - Portland OR, US
Chris E. Barns - Portland OR, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H01L 21/302
H01L 21/461
H01L 21/469
H01L 21/4763
US Classification:
438623, 438725, 438780, 438781, 438783
Abstract:
An inter-layer dielectric structure and method of making such structure are disclosed. A composite dielectric layer, initially comprising a porous matrix and a porogen, is formed. Subsequent to other processing treatments, the porogen is decomposed and removed from at least a portion of the porous matrix, leaving voids defined by the porous matrix in areas previously occupied by the porogen. The resultant structure has a desirably low k value as a result of the porosity and materials comprising the porous matrix and porogen. The composite dielectric layer may be used in concert with other dielectric layers of varying porosity, dimensions, and material properties to provide varied mechanical and electrical performance profiles.

Low-K Dielectric Film With Good Mechanical Strength That Varies In Local Porosity Depending On Location On Substrate—Therein

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US Patent:
7145245, Dec 5, 2006
Filed:
Sep 2, 2005
Appl. No.:
11/218748
Inventors:
Grant Kloster - Lake Oswego OR, US
Lee Rockford - Portland OR, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H01L 23/48
H01L 23/58
US Classification:
257762, 257644, 257751, 257752, 257761, 257763
Abstract:
The present invention discloses a method including providing a substrate; forming a dielectric over the substrate, the dielectric having a k value of about 2. 5 or lower, the dielectric having a Young's modulus of elasticity of about 15 GigaPascals or higher; forming an opening in the dielectric; and forming a conductor in the opening. The present invention further discloses a structure including a substrate; a dielectric located over the substrate, the dielectric having a k value of 2. 5 or lower, the dielectric having a Young's modulus of elasticity of about 15 GigaPascals or higher; an opening located in the dielectric; and a conductor located in the opening.

Selectively Converted Inter-Layer Dielectric

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US Patent:
7239019, Jul 3, 2007
Filed:
Jun 28, 2005
Appl. No.:
11/170322
Inventors:
Grant M. Kloster - Lake Oswego OR, US
David H. Gracias - Portland OR, US
Lee D. Rockford - Portland OR, US
Peter K. Moon - Portland OR, US
Chris E. Barns - Portland OR, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H01L 23/48
H01L 23/52
H01L 29/40
US Classification:
257758, 257750, 257759, 257760, 257774, 257E23041, 257E23022
Abstract:
An inter-layer dielectric structure and method of making such structure are disclosed. A composite dielectric layer, initially comprising a porous matrix and a porogen, is formed. Subsequent to other processing treatments, the porogen is decomposed and removed from at least a portion of the porous matrix, leaving voids defined by the porous matrix in areas previously occupied by the porogen. The resultant structure has a desirably low k value as a result of the porosity and materials comprising the porous matrix and porogen. The composite dielectric layer may be used in concert with other dielectric layers of varying porosity, dimensions, and material properties to provide varied mechanical and electrical performance profiles.

Multiple Layer Deposition For Improving Adhesion

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US Patent:
7579070, Aug 25, 2009
Filed:
Aug 30, 2005
Appl. No.:
11/216829
Inventors:
Lee Rockford - Portland OR, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
B32B 3/26
US Classification:
4283166, 4283191, 4283193, 4283197, 428901
Abstract:
Methods to improve adhesion of a first material to a second material and electronics devices fabricated using such methods are described. A porous polymer layer is formed on a conductive layer. Forming the porous polymer layer leaves portions of the conductive layer exposed. A porous conductive layer is formed over the porous polymer layer and the exposed portions of the conductive layer. A continuous polymer layer is formed over the porous conductive layer. In one embodiment, the polymer layer includes a ferroelectric polymer, and the conductive layer includes a noble metal, e. g. , gold.

Ferroelectric Polymer Memory Module

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US Patent:
7808024, Oct 5, 2010
Filed:
Sep 27, 2004
Appl. No.:
10/951017
Inventors:
Lee D. Rockford - Portland OR, US
Ebrahim Andideh - Portland OR, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H01L 29/76
US Classification:
257295, 257E21663, 257E21664, 257E27104, 438 3
Abstract:
A ferroelectric polymer memory module includes a first set of layers including: a first ILD layer defining trenches therein; a first electrode layer disposed in the trenches of the first ILD layer; a first conductive polymer layer disposed on the first electrode layer and in the trenches of the first ILD layer; and a ferroelectric polymer layer disposed on the first conductive polymer layer and in the trenches of the first ILD layer; and a second set of layers disposed on the first set of layers to define memory cells therewith, the second set of layers including: a second ILD layer defining trenches therein; a second conductive polymer layer disposed in the trenches of the second ILD layer; and a second electrode layer disposed on the second conductive polymer layer.

Ferroelectric Polymer Memory Module

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US Patent:
8129767, Mar 6, 2012
Filed:
Sep 1, 2010
Appl. No.:
12/874124
Inventors:
Lee D. Rockford - Portland OR, US
Ebrahim Andideh - Portland OR, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H01L 29/76
US Classification:
257295, 257E27104, 257E21663, 257E21664, 438 3
Abstract:
Ferroelectric polymer memory modules are described. In an example, a module has a first set of layers including a first ILD layer defining trenches therein, a first electrode layer disposed in the trenches of the first ILD layer, a first conductive polymer layer disposed on the first electrode layer and in the trenches of the first ILD layer, and a ferroelectric polymer layer disposed on the first conductive polymer layer, in and extending beyond the trenches of the first ILD layer. The module also has a second set of layers disposed on the first set of layers to define memory cells therewith. The second set of layers includes a second ILD layer defining trenches therein, a second conductive polymer layer disposed in the trenches of the second ILD layer, and a second electrode layer disposed on the second conductive polymer layer.
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Lee D Rockford from Portland, OR, age ~52 Get Report