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Larry L Keutzer

from Austin, TX
Age ~79
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Also known as:
Larry Lee Keutzer, Lawrence Keutzer, Laurence Keutzer
Phone and address:
7103 Twisted Oaks Dr, Austin, TX 78745
(512) 441-7160
Related to:
Karen M Mechura, 57Wheeler H Greenwood, 50Howard J Greenwood, 84Kimberly L Greenwood, 53Larry M Deuser, 84Carole L Deuser, 81Rocky GreenwoodMicha RichmondKevin Keutzer, 48Janet M Keutzer, 78
Connected to:
Malika M Keval, 67Brian C Kevan, 55Carl H Kevan, 80Charles L Kevan, 90Joshua W Kevan, 32David J Kevane, 55Sophie C Kevany, 58Kathryn B Keve, 84Paul W Keve, 47Rachel A Kevehazi, 39

Larry Keutzer Phones & Addresses

  • 7103 Twisted Oaks Dr, Austin, TX 78745 (512) 441-7160 (512) 462-2586
  • 7103 Twisted Oaks Dr, Austin, TX 78745 (512) 736-0625

Work

Position: Professional/Technical

Education

Degree: Associate degree or higher

Resumes

Resumes

Larry Keutzer Photo 1

Larry Keutzer

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Location:
Austin, TX

Publications

Us Patents

Ozone Generation Apparatus And Method

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US Patent:
40951154, Jun 13, 1978
Filed:
Dec 27, 1976
Appl. No.:
5/754615
Inventors:
F. D. Orr - Austin TX
L. F. Templeton - Austin TX
Larry L. Keutzer - Austin TX
Assignee:
Accelerators, Inc. - Austin TX
International Classification:
C01B 1300
US Classification:
250538
Abstract:
The invention provides a method and apparatus for generating large quantities of singlet oxygen and/or ozone at unexpectedly high efficiencies. An electron beam generated by a hollow cathode plasma discharge device (HCD) is spread by disclosed means over an electron-transmissive window past which is flowing an oxygen-containing atmosphere at a high velocity.

Ion Implantation Control System

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US Patent:
45174652, May 14, 1985
Filed:
Mar 29, 1983
Appl. No.:
6/480095
Inventors:
Roger B. Gault - Austin TX
Larry L. Keutzer - Austin TX
Assignee:
VEECO/ai, Inc. - Austin TX
International Classification:
A61K 2702
H01J 3700
US Classification:
2504922
Abstract:
A control system is disclosed for an ion implantation system of the type in which the wafers to be implanted are mounted around the periphery of a disk which rotates and also moves in a radial direction relative to an ion beam to expose successive sections of each wafer to the radiation. The control system senses beam current which passes through one or more apertures in the disk and is collected by a Faraday cup. This current is integrated to obtain a measure of charge which is compared with a calculated value based upon the desired ion dosage and other parameters. The resultant controls the number of incremental steps the rotating disk moves radially to expose the adjacent sections of each wafer. This process is continued usually with two or more traverses until the entire surface of each wafer has been implanted with the proper ion dosage.

Ozone Generation Apparatus And Method

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US Patent:
41674669, Sep 11, 1979
Filed:
Apr 28, 1978
Appl. No.:
5/900845
Inventors:
F. Donald Orr - Austin TX
Larry F. Templeton - Austin TX
Larry L. Keutzer - Austin TX
Assignee:
Accelerators, Inc. - Austin TX
International Classification:
B01K 100
C01B 1310
US Classification:
204176
Abstract:
The invention provides a method and apparatus for generating large quantities of singlet oxygen and/or ozone at unexpectedly high efficiencies. An electron beam generated by a hollow cathode plasma discharge device (HCD) is spread by disclosed means over an electron-transmissive window past which is flowing an oxygen-containing atmosphere at a high velocity.
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Larry L Keutzer from Austin, TX, age ~79 Get Report