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Kyle M Whitten

from Hamden, CT
Age ~67
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Also known as:
Katherine Whitten, Karen Whitten
Related to:
Eric Whitten
Connected to:
Alayna M Whitten, 27Alyssa A Whittenberger, 61Archie K Whittemore, 79Ashley Whittenburg, 30Attakia Whittenburg, 60Audrey R Whitten, 78Austin Whittemore, 34Barbara Whittenburg, 63Beverly A Whitten, 73Billy G Whitten, 49

Kyle Whitten Phones & Addresses

  • Hamden, CT
  • Lake Mary, FL
  • Shreveport, LA
  • Yonkers, NY
  • 54 Somerset Dr, Windsor, CT 06095
  • Quincy, MA
  • Cheshire, CT

Business Records

Name / Title
Company / Classification
Phones & Addresses
Kyle L. Whitten
Manager
Whitten Investment Group LLC
5004 Savannah Riv Way, Orlando, FL 32839

Publications

Us Patents

Cobalt Filling Of Interconnects

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US Patent:
20210332491, Oct 28, 2021
Filed:
Apr 5, 2021
Appl. No.:
17/222058
Inventors:
- Waterbury CT, US
Kyle Whitten - Hamden CT, US
Vincent Paneccasio, JR. - Madison CT, US
Shaopeng Sun - Orange CT, US
Eric Yakobson - Cheshire CT, US
Jianwen Han - Southbury CT, US
Elie Najjar - Norwood MA, US
International Classification:
C25D 3/16
H01L 21/768
C25D 5/02
C25D 7/12
H01L 21/288
C25D 3/18
C25D 7/00
Abstract:
Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.

Leveler Compositions For Use In Copper Deposition In Manufacture Of Microelectronics

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US Patent:
20210310141, Oct 7, 2021
Filed:
Jun 15, 2021
Appl. No.:
17/347934
Inventors:
- Waterbury CT, US
Kyle Whitten - Waterbury CT, US
Thomas B. Richardson - Waterbury CT, US
Ivan Li - Waterbury CT, US
International Classification:
C25D 3/38
C08G 65/333
H05K 3/18
H05K 3/42
C25D 7/12
C08G 65/24
C08L 71/03
Abstract:
An aqueous electrolytic composition and a process for electrodeposition of copper on a dielectric or semiconductor base structure using the aqueous electrolytic compostion. The process includes (i) contacting a metalizing substrate comprising a seminal conductive layer on the base structure with an aqueous electrolytic deposition composition; and (ii) supplying electrical current to the electrolytic deposition composition to deposit copper on the substrate. The aqueous electrolytic composition comprises: (a) copper ions; (b) an acid; (c) a suppressor; and (d) a quaternized poly(epihalohydrin) comprising n repeating units corresponding to structure 1N and p repeating units corresponding to structure 1P:

Cobalt Filling Of Interconnects In Microelectronics

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US Patent:
20210222314, Jul 22, 2021
Filed:
Apr 1, 2021
Appl. No.:
17/220540
Inventors:
- Waterbury CT, US
Vincent Paneccasio, JR. - Madison CT, US
Eric Rouya - Oakland CA, US
Kyle Whitten - Hamden CT, US
Shaopeng Sun - Orange CT, US
Jianwen Han - Southbury CT, US
International Classification:
C25D 7/12
C25D 3/16
C25D 3/56
Abstract:
Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising sub-micron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.

Leveler Compositions For Use In Copper Deposition In Manufacture Of Microelectronics

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US Patent:
20200063280, Feb 27, 2020
Filed:
Nov 4, 2019
Appl. No.:
16/672720
Inventors:
- Waterbury CT, US
Kyle Whitten - Waterbury CT, US
Thomas B. Richardson - Waterbury CT, US
Ivan Li - Waterbury CT, US
International Classification:
C25D 3/38
C08G 65/333
H05K 3/18
H05K 3/42
C25D 7/12
C08G 65/24
C08L 71/03
Abstract:
An aqueous electrolytic composition and a process for electrodeposition of copper on a dielectric or semiconductor base structure using the aqueous electrolytic composition. The process includes (i) contacting a metalizing substrate comprising a seminal conductive layer on the base structure with an aqueous electrolytic deposition composition; and (ii) supplying electrical current to the electrolytic deposition composition to deposit copper on the substrate. The aqueous electrolytic composition comprises: (a) copper ions; (b) an acid; (c) a suppressor; and (d) a quaternized poly(epihalohydrin) comprising n repeating units corresponding to structure 1N and p repeating units corresponding to structure 1P:

Cobalt Filling Of Interconnects In Microelectronics

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US Patent:
20200040478, Feb 6, 2020
Filed:
Jun 30, 2016
Appl. No.:
15/739314
Inventors:
- Waterbury CT, US
Vincent Paneccasio, Jr. - Madison CT, US
Eric Rouya - Oakland CA, US
Kyle Whitten - Hamden CT, US
Shaopeng Sun - Orange CT, US
International Classification:
C25D 7/12
C25D 3/56
C25D 3/16
Abstract:
Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising submicron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.

Copper Electrodeposition In Microelectronics

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US Patent:
20190390356, Dec 26, 2019
Filed:
Sep 21, 2017
Appl. No.:
16/334168
Inventors:
- Waterbury CT, US
Kyle Whitten - Hamden CT, US
Richard Hurtubise - Clinton CT, US
John Commander - Old Saybrook CT, US
Eric Rouya - Oakland CA, US
International Classification:
C25D 3/38
C25D 7/12
C25D 17/00
Abstract:
An electrolytic plating composition for superfilling submicron features in a semiconductor integrated circuit device and a method of using the same. The composition comprises (a) a source of copper ions to electrolytically deposit copper onto the substrate and into the electrical interconnect features, and (b) a suppressor comprising at least three amine sites, said polyether comprising a block copolymer substituent comprising propylene oxide (PO) repeat units and ethylene oxide (EO) repeat units, wherein the number average molecular weight of the suppressor compound is between about 1,000 and about 20,000.

Copper Deposition In Wafer Level Packaging Of Integrated Circuits

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US Patent:
20190368064, Dec 5, 2019
Filed:
Sep 20, 2017
Appl. No.:
16/334098
Inventors:
- Waterbury CT, US
Kyle Whitten - Hamden CT, US
Vincent Paneccasio, Jr. - Madison CT, US
John Commander - Old Saybrook CT, US
Richard Hurtubise - Clinton CT, US
International Classification:
C25D 3/38
H01L 23/00
C08G 73/06
C08G 65/24
C08G 65/333
Abstract:
An electrodeposition composition comprising: (a) a source of copper ions; (b) an acid; (c) a suppressor, and (d) a leveler, wherein the leveler comprises a quaternized dipyridyl compound prepared by reacting a dipyridyl compound with a difunctional alkylating agent or a quaternized poly(epihalohydrin). The electrodeposition composition can be used in a process for forming a copper feature over a semiconductor substrate in wafer level packaging to electrodeposit a copper bump or pillar on an underbump structure of a semiconductor assembly.

Cobalt Filling Of Interconnects

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US Patent:
20190010624, Jan 10, 2019
Filed:
Jul 5, 2017
Appl. No.:
15/641756
Inventors:
- Waterbury CT, US
Kyle Whitten - Hamden CT, US
Vincent Paneccasio, JR. - Madison CT, US
Shaopeng Sun - Orange CT, US
Eric Yakobson - Cheshire CT, US
International Classification:
C25D 3/16
H01L 21/768
C25D 5/02
C25D 7/12
Abstract:
Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.
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Kyle M Whitten from Hamden, CT, age ~67 Get Report