Inventors:
Kurt Jacques Sonneborn - Lebanon NJ
Assignee:
RCA Corporation - New York NY
International Classification:
C23F 104
Abstract:
An improved method of defining a pattern in a layer of organic material includes depositing a relatively thin layer of silicon dioxide on the layer of organic material, applying to the silicon dioxide layer a film of primer solution comprising a silane derivative, and then forming a photoresist etch mask on the film. By utilizing an ultrasonic etch bath, a uniform and well-defined pattern is etched in the layer of organic material.