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Kourosh Nafisi

from San Jose, CA
Age ~54
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Also known as:
Kourosh Nafasi, Kourosh Nafissi, Kouroha Nasisi
Phone and address:
2881 Meridian Ave UNIT 158, San Jose, CA 95124
(408) 440-1308
Related to:
Ashraf A NafisiNader Nafissi, 57Ashraf A Nafisi, 82Abdolreza NafisiAdbolreza Nafisi, 84N Naissi
Connected to:
Bijan D Nafison, 34Ali M Nafissi, 99Mohammed Nafiu, 54Candace L Nafius, 52Sima G Nafiz, 75Pamela J Nafsinger, 64April Nafstad, 51Gary Nafstad, 75Barry L Naft, 66Rachel M Naft, 44

Kourosh Nafisi Phones & Addresses

  • 2881 Meridian Ave UNIT 158, San Jose, CA 95124 (408) 440-1308
  • Wappingers Falls, NY
  • 73 3Rd St, Los Altos, CA 94022
  • 2225 Sharon Rd, Menlo Park, CA 94025
  • Los Angeles, CA
  • Irvine, CA
  • Wappingers Fl, NY
  • Santa Clara, CA
  • Beverly Hills, CA

Work

Company: Asml Apr 2019 Position: Manager, product engineering group

Education

Degree: Doctorates, Doctor of Philosophy School / High School: Uc Irvine 1993 to 1999 Specialities: Chemistry

Skills

Semiconductors • Design of Experiments • Semiconductor Industry • Thin Films • Characterization • Failure Analysis • Ic • Lithography • R&D • Electronics • Process Integration • Cmos • Cross Functional Team Leadership • Nanotechnology • Simulations • Engineering Management • Spc • Product Lifecycle Management • Manufacturing • Physics • Materials Science • Process Simulation • Testing • Process Engineering • Eda • Labview • Systems Engineering • Image Processing • Analog • Statistical Process Control • Materials • Root Cause Analysis • Technical Leadership • Research and Development • Integrated Circuits

Industries

Semiconductors

Resumes

Resumes

Kourosh Nafisi Photo 1

Manager, Product Engineering Group

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Location:
San Francisco, CA
Industry:
Semiconductors
Work:
Asml
Manager, Product Engineering Group
Asml Jan 2019 - Apr 2019
Product Integration
Applied Materials Jan 2019 - Apr 2019
Process Metrology Engineer
Applied Materials Jan 2019 - Apr 2019
Ipc Application Manager, Ebeam
Applied Materials Jan 2019 - Apr 2019
Scla Strategic Application Engineer
Education:
Uc Irvine 1993 - 1999
Doctorates, Doctor of Philosophy, Chemistry University of California, Los Angeles 1990 - 1993
Bachelors, Bachelor of Science, Materials Science, Chemistry
Skills:
Semiconductors
Design of Experiments
Semiconductor Industry
Thin Films
Characterization
Failure Analysis
Ic
Lithography
R&D
Electronics
Process Integration
Cmos
Cross Functional Team Leadership
Nanotechnology
Simulations
Engineering Management
Spc
Product Lifecycle Management
Manufacturing
Physics
Materials Science
Process Simulation
Testing
Process Engineering
Eda
Labview
Systems Engineering
Image Processing
Analog
Statistical Process Control
Materials
Root Cause Analysis
Technical Leadership
Research and Development
Integrated Circuits

Publications

Us Patents

Computer-Implemented Methods For Detecting And/Or Sorting Defects In A Design Pattern Of A Reticle

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US Patent:
7729529, Jun 1, 2010
Filed:
Dec 7, 2004
Appl. No.:
11/005658
Inventors:
Kenong Wu - Davis CA, US
David Randall - Sunnyvale CA, US
Kourosh Nafisi - Los Altos CA, US
Ramon Ynzunza - Milpitas CA, US
Ingrid B. Peterson - Menlo Park CA, US
Ariel Tribble - Fremont CA, US
Michal Kowalski - Santa Cruz CA, US
Lisheng Gao - Morgan Hill CA, US
Ashok Kulkarni - San Jose CA, US
Assignee:
KLA-Tencor Technologies Corp. - Milpitas CA
International Classification:
G06K 9/00
H01L 21/66
G06F 17/50
US Classification:
382149, 382144, 382145, 382147, 382148, 438 15, 716 1, 716 21
Abstract:
Various computer-implemented methods are provided. One method for sorting defects in a design pattern of a reticle includes searching for defects of interest in inspection data using priority information associated with individual defects in combination with one or more characteristics of a region proximate the individual defects. The priority information corresponds to modulation levels associated with the individual defects. The inspection data is generated by comparing images of the reticle generated for different values of a lithographic variable. The images include at least one reference image and at least one modulated image. A composite reference image can be generated from two or more reference images. The method also includes assigning one or more identifiers to the defects of interest. The identifier(s) may include, for example, a defect classification and/or an indicator identifying if the defects of interest are to be used for further processing.

Computer-Implemented Methods For Detecting And/Or Sorting Defects In A Design Pattern Of A Reticle

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US Patent:
8111900, Feb 7, 2012
Filed:
May 15, 2010
Appl. No.:
12/780864
Inventors:
Kenong Wu - Davis CA, US
David Randall - Sunnyvale CA, US
Kourosh Nafisi - Los Altos CA, US
Ramon Ynzunza - Milpitas CA, US
Ingrid B. Peterson - Menlo Park CA, US
Ariel Tribble - Fremont CA, US
Michal Kowalski - Santa Cruz CA, US
Lisheng Gao - Morgan Hill CA, US
Ashok Kulkarni - San Jose CA, US
Assignee:
KLA-Tencor Technologies Corp. - Milpitas CA
International Classification:
G06K 9/00
G01R 31/26
G21K 5/00
G06F 17/50
US Classification:
382144, 382145, 382147, 382148, 382149, 438 15, 378 34, 716 55
Abstract:
Various computer-implemented methods are provided. One method for sorting defects in a design pattern of a reticle includes searching for defects of interest in inspection data using priority information associated with individual defects in combination with one or more characteristics of a region proximate the individual defects. The priority information corresponds to modulation levels associated with the individual defects. The inspection data is generated by comparing images of the reticle generated for different values of a lithographic variable. The images include at least one reference image and at least one modulated image. A composite reference image can be generated from two or more reference images. The method also includes assigning one or more identifiers to the defects of interest. The identifier(s) may include, for example, a defect classification and/or an indicator identifying if the defects of interest are to be used for further processing.

Sem Repair For Sub-Optimal Features

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US Patent:
8450120, May 28, 2013
Filed:
Mar 30, 2012
Appl. No.:
13/435308
Inventors:
Stuart A. Sieg - Hopewell Junction NY, US
Kourosh Nafisi - Hopewell Junction NY, US
Eric Peter Solecky - Hopewell Junction NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21/00
US Classification:
438 4, 438 14, 700110
Abstract:
A method and system for repairing photomasks is disclosed. A scanning electron microscope (SEM) is used to identify, measure, and correct defects. The SEM is operated in multiple modes, including a measuring mode and a repair mode. The repair mode is of higher landing energy and exposure time than the measuring mode, and induces shrinkage in the photoresist to correct various features, such as vias that are too small.

Method, Apparatus, And Computer Program Product For Optimizing Inspection Recipes Using Programmed Defects

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US Patent:
20080100831, May 1, 2008
Filed:
Oct 31, 2006
Appl. No.:
11/554879
Inventors:
Oliver D. Patterson - Poughkeepsie NY, US
Maryjane Brodsky - Salt Point NY, US
Kourosh Nafisi - Wappingers Falls NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G01N 21/00
G01B 11/00
US Classification:
3562374, 356399
Abstract:
A method, apparatus, and computer program product for implementing inspection recipe services are provided. The apparatus includes a test structure including a semiconductor substrate and a number of arrays disposed on the semiconductor substrate. The arrays are linearly arranged and spaced equidistant. Each of the arrays corresponds to a reticle field and includes a number of cells. The test structure also includes a defect programmed into every third array. The defect is programmed in the same location on each third array. The test structure further includes an alignment site defined on the test structure for providing a point of reference upon inspection. The alignment site, in conjunction with a modified reticle pitch extending the distance of one reticle field plus a portion of an adjacent reticle field, are used to perform a random mode inspection of selected arrays in the test structure.

Method, Apparatus, And Computer Program Product For Optimizing Inspection Recipes Using Programmed Defects

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US Patent:
20080225284, Sep 18, 2008
Filed:
May 28, 2008
Appl. No.:
12/127951
Inventors:
Oliver D. Patterson - Poughkeepsie NY, US
Maryjane Brodsky - Salt Point NY, US
Kourosh Nafisi - Wappingers Falls NY, US
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
International Classification:
G01N 21/00
US Classification:
3562375
Abstract:
A method and computer program product for implementing inspection recipe services are provided. The method includes defining a modified reticle pitch for use in inspecting programmed defects on a test structure, the modified reticle pitch extending the distance of one reticle field plus a portion of an adjacent reticle field on the test structure. The test structure includes a number of arrays linearly arranged on the test structure and spaced equidistant, and each of the arrays corresponds to a reticle field and includes a number of cells. The method also includes using the modified reticle field pitch and an alignment site on the test structure to perform a random mode inspection of the test structure.

Sem Repair For Sub-Optimal Features

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US Patent:
20120190134, Jul 26, 2012
Filed:
Jan 26, 2011
Appl. No.:
13/013947
Inventors:
Stuart A. Sieg - Hopewell Junction NY, US
Kourosh Nafisi - Hopewell Junction NY, US
Eric Peter Solecky - Hopewell Junction NY, US
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
International Classification:
H01L 21/66
B23Q 15/00
G06F 17/30
US Classification:
438 4, 707769, 29705, 707E17014, 257E21525
Abstract:
A method and system for repairing photomasks is disclosed. A scanning electron microscope (SEM) is used to identify, measure, and correct defects. The SEM is operated in multiple modes, including a measuring mode and a repair mode. The repair mode is of higher landing energy and exposure time than the measuring mode, and induces shrinkage in the photoresist to correct various features, such as vias that are too small.

Enhanced Cross Sectional Features Measurement Methodology

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US Patent:
20220214165, Jul 7, 2022
Filed:
May 21, 2020
Appl. No.:
17/607846
Inventors:
- Santa Clara CA, US
Jorge Pablo Fernandez - Saratoga CA, US
Kourosh Nafisi - San Jose CA, US
International Classification:
G01B 15/04
G06T 7/00
G03F 7/20
Abstract:
Disclosed herein are methods and systems for analyzing a cross-sectional feature of a structural element on a semiconductor wafer to determine whether an isolated or a systemic failure to reach preselected parameters occurred.

Imaging Of Crystalline Defects

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US Patent:
20190180975, Jun 13, 2019
Filed:
Apr 17, 2018
Appl. No.:
15/955467
Inventors:
- Rehovot, IL
Uri Lev - Mazkeret Batya, IL
Benjamin Colombeau - San Jose CA, US
Amir Wachs - Caesarea, IL
Kourosh Nafisi - San Jose CA, US
International Classification:
H01J 37/22
H01J 37/28
H01J 37/244
Abstract:
A method for detecting crystal defects includes scanning a first FOV on a first sample using a charged particle beam with a plurality of different tilt angles. BSE emitted from the first sample are detected and a first image of the first FOV is created. A first area within the first image is identified where signals from the BSE are lower than other areas of the first image. A second FOV on a second sample is scanned using approximately the same tilt angles or deflections as those used to scan the first area. The BSE emitted from the second sample are detected and a second image of the second FOV is created. Crystal defects within the second sample are identified by identifying areas within the second image where signals from the BSE are different than other areas of the second image.
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Kourosh Nafisi from San Jose, CA, age ~54 Get Report