Kolagani Solomo Harshavardhan

6632282, Oct 14, 2003

Sep 24, 2001

09/961082

Kolagani S. Harshavardhan - Silver Spring MD
Jeonggoo Kim - Laurel MD

Neocera, Inc. - Beltsville MD

C23C 1400

118500, 118730, 20429827

A planetary multi-substrate holder system for material deposition includes a substrate holder having circumferentially shaped openings in which disk-like substrates of a smaller diameter than the diameter of the openings are maintained. Upon rotation of the substrate holder, either in a vertical plane, or in a horizontal plane, the substrates self-rotate within each opening due to either gravity force (for vertically rotated substrate holder), or due to centrifugal force (for horizontally rotated substrate holder) applied to the substrates. The planetary multi-substrate system obviates the need for mechanical individual gears to rotate substrates for material deposition, and, as a sequence, yields an extended service life of the system, as well as agreeability with high temperatures used in material deposition process, and reduced cost of a final product.

7190889, Mar 13, 2007

May 17, 2004

10/846602

Mikhail Strikovski - Rockville MD, US
Kolagani Solomon Harshavardhan - Ellicott City MD, US

Neocera, LLC - Beltsville MD

A21B 2/00
F27D 11/00
C23C 16/00

392416, 219405, 118725

A heater for the non-contact heating of an object, such as a substrate for material deposition, includes a housing defining a deposition cavity and a source of radiation outside the deposition cavity. A reflector is optically coupled to the source of radiation to collect the radiation and to focus it on the radiation path. The reflector may have different shapes. If, for example, the reflector is an ellipsoidal reflector, the source of radiation then is mounted in a first focus, the substrate is located in the other focus, and the radiation path is positioned on the main focal axis of the ellipsoidal reflector. The radiation from the source of radiation is delivered to the substrate inside the deposition cavity through a radiation path(s) formed in the housing wall to heat the substrate to the temperature T, so that T

60749903, Jun 13, 2000

Jan 31, 1997

8/791330

Alberto Pique - Bowie MD
Kolagani S. Harshavardhan - Greenbelt MD
Thirumalai Venkatesan - Washington DC

Neocera, Inc. - Beltsville MD

H01L 3902
B05D 512

505239

A superconducting garnet thin film system (10) is provided for high frequency microwave applications where a single crystal high temperature superconducting (HTSC) layer (18) is integrated with a garnet substrate (12). A first perovskite compound buffer layer (14) is epitaxially grown on an upper surface of the garnet substrate layer (12) and defines a lattice constant less than the lattice constant of the garnet substrate layer (12) with the first perovskite layer being aligned in a cube on cube parallel orientation with respect to the garnet substrate layer (12). A second perovskite layer (16) is epitaxially grown on an upper surface of the first perovskite layer (14) at an orientation of 45. degree. to first layer (14) and defines a lattice constant less than the lattice constant of the first perovskite layer. The HTSC layer (18) is epitaxially grown on an upper surface of the second perovskite layer (16) in parallel aligned orientation and is lattice matched to the second perovskite compound layer (16) for incorporation of passive components within the high temperature superconducting layer (18) having high frequency microwave applications.

56354533, Jun 3, 1997

Dec 23, 1994

8/362894

Alberto Pique - Bowie MD
Kolagani S. Harshavardhan - Greenbelt MD
Thirumalai Venkatesan - Washington DC

Neocera, Inc. - Beltsville MD

B32B 900

505239

A superconducting thin film system (10) is provided for high frequency microwave applications where a single crystal high temperature superconducting layer (18) is integrated with a garnet substrate (12). A first perovskite compound buffer layer (14) is epitaxially grown on an upper surface of the garnet substrate layer (12) and defines a lattice constant less than the lattice constant of the garnet substrate layer (12). A second perovskite layer (16) is epitaxially grown on an upper surface of the first perovskite layer (14) and defines a lattice constant less than the lattice constant of the first perovskite layer. A high temperature superconducting layer (18) is epitaxially grown on an upper surface of the second perovskite layer (16) and is lattice matched to the second perovskite compound layer (16) for incorporation of passive components within the high temperature superconducting layer (18) having high frequency microwave applications.

59935448, Nov 30, 1999

Mar 30, 1998

9/050049

Lee A. Knauss - Bowie MD
Kolagani S. Harshavardhan - Silver Spring MD

Neocera, Inc. - Beltsville MD

B23B 900

117 94

A non-linear optical thin film layer system (10) is provided for integrated optics applications where a non-linear optical thin film layer (18) is integrated with a gallium-arsenide substrate (12). A first encapsulating layer (20) is deposited on lower surface (26), peripheral sides (30), and an upper surface peripheral region (28) of said gallium-arsenide substrate (12). A second encapsulating and buffer layer (14) is epitaxially grown on an upper surface of said gallium-arsenide substrate (12) and on the encapsulated upper surface peripheral region (28) of said gallium-arsenide substrate (12). A perovskite layer (16) is epitaxially grown on an upper surface of the layer (14). A non-linear optical thin film layer (18) is epitaxially grown on an upper surface of the perovskite layer (16) and is lattice matched to this layer.

54201020, May 30, 1995

Aug 1, 1994

8/283719

Kolagani S. Harshavardhan - Greenbelt MD
Thirumalai Venkatesan - Washington DC

Neocera, Inc. - College Park MD

B32B 900

505237

A high frequency superconducting device structure is disclosed which comprises an alkaline earth fluoride substrate with a magnesium oxide lower buffer layer on the alkaline earth substrate and an upper buffer layer epitaxial template layer on the magnesium oxide layer for providing a template for epitaxial growth of a high temperature superconducting film on the upper buffer layer, providing reduced dielectric and conducting losses at high frequencies. The disclosed structure may be incorporated into a multi-chip module (MCM) for providing very high speed interconnections.

54725100, Dec 5, 1995

Jul 27, 1994

8/281273

Kolagani S. Harshavardhan - Greenbelt MD
Thirumalai Venkatesan - Washington DC
Steven Green - Greenbelt MD

Neocera, Inc. - College Park MD

C23C 1400

118730

A high frequency superconducting device structure is disclosed which comprises an alkaline earth fluoride substrate with a magnesium oxide lower buffer layer on the alkaline earth substrate and an upper buffer layer epitaxial template layer on the magnesium oxide layer for providing a template for epitaxial growth of a high temperature superconducting film on the upper buffer layer, providing reduced dielectric and conducting losses at high frequencies. The disclosed structure may be incorporated into a multi-chip module (MCM) for providing very high speed interconnections.