Kimberly Rae Tschepen

6821347, Nov 23, 2004

Jul 8, 2002

10/191889

Craig M. Carpenter - Boise ID
Allen P. Mardian - Boise ID
Ross S. Dando - Nampa ID
Kimberly R. Tschepen - Boise ID
Garo J. Derderian - Boise ID

Micron Technology, Inc. - Boise ID

B05C 318

118696, 118715, 15634533, 15634534, 700121

Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one embodiment, a reactor for vapor deposition of a material comprises a reaction chamber and a gas distributor. The reaction chamber can include an inlet and an outlet. The gas distributor is positioned in the reaction chamber. The gas distributor has a compartment coupled to the inlet to receive a gas flow and a distributor plate including a first surface facing the compartment, a second surface facing the reaction chamber, and a plurality of passageways. The passageways extend through the distributor plate from the first surface to the second surface. Additionally, at least one of the passageways has at least a partially occluded flow path through the plate. For example, the occluded passageway can be canted at an oblique angle relative to the first surface of the distributor plate so that gas flowing through the canted passageway changes direction as it passes through the distributor plate.

7192487, Mar 20, 2007

Oct 28, 2003

10/695727

Craig M. Carpenter - Boise ID, US
Ross S. Dando - Nampa ID, US
Allen P. Mardian - Boise ID, US
Kevin T. Hamer - Meridian ID, US
Raynald B. Cantin - Boise ID, US
Philip H. Campbell - Meridain ID, US
Kimberly R. Tschepen - Corvallis OR, US
Randy W. Mercil - Boise ID, US

Micron Technology, Inc. - Boise ID

C23C 16/00
C23F 1/00
H01L 21/301

118715, 118719, 15634531, 15634532, 15634529

A semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material. An interfacial structure includes a body having a substrate passageway extending therethrough. The passageway includes walls at least a portion of which are substantially metallic. The body includes material peripheral of the walls which is substantially non-metallic and thermally insulative.

7387685, Jun 17, 2008

Sep 2, 2004

10/933604

Craig M. Carpenter - Boise ID, US
Allen P. Mardian - Boise ID, US
Ross S. Dando - Nampa ID, US
Kimberly R. Tschepen - Boise ID, US
Garo J. Derderian - Boise ID, US

Micron Technology, Inc. - Boise ID

C23C 16/455
C23C 16/00
H01L 21/3065

118715, 15634534, 15634533

Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one embodiment, a reactor for vapor deposition of a material comprises a reaction chamber and a gas distributor. The reaction chamber can include an inlet and an outlet. The gas distributor is positioned in the reaction chamber. The gas distributor has a compartment coupled to the inlet to receive a gas flow and a distributor plate including a first surface facing the compartment, a second surface facing the reaction chamber, and a plurality of passageways. The passageways extend through the distributor plate from the first surface to the second surface. Additionally, at least one of the passageways has at least a partially occluded flow path through the plate. For example, the occluded passageway can be canted at an oblique angle relative to the first surface of the distributor plate so that gas flowing through the canted passageway changes direction as it passes through the distributor plate.

20030159780, Aug 28, 2003

Feb 22, 2002

10/082599

Craig Carpenter - Boise ID, US
Ross Dando - Nampa ID, US
Allen Mardian - Boise ID, US
Kevin Hamer - Meridian ID, US
Raynald Cantin - Boise ID, US
Philip Campbell - Meridian ID, US
Kimberly Tschepen - Boise ID, US
Randy Mercil - Boise ID, US

C23F001/00
C23C016/00

156/345310, 118/719000

A semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material. An interfacial structure includes a body having a substrate passageway extending therethrough. The passageway includes walls at least a portion of which are substantially metallic. The body includes material peripheral of the walls which is substantially non-metallic and thermally insulative. The substantially non-metallic material has mounting openings extending at least partially therein.

20050022739, Feb 3, 2005

Sep 2, 2004

10/933605

Craig Carpenter - Boise ID, US
Allen Mardian - Boise IID, US
Ross Dando - Nampa ID, US
Kimberly Tschepen - Boise ID, US
Garo Derderian - Boise ID, US

C23C016/00

118715000, 427248100

Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one embodiment, a reactor for vapor deposition of a material comprises a reaction chamber and a gas distributor. The reaction chamber can include an inlet and an outlet. The gas distributor is positioned in the reaction chamber. The gas distributor has a compartment coupled to the inlet to receive a gas flow and a distributor plate including a first surface facing the compartment, a second surface facing the reaction chamber, and a plurality of passageways. The passageways extend through the distributor plate from the first surface to the second surface. Additionally, at least one of the passageways has at least a partially occluded flow path through the plate. For example, the occluded passageway can be canted at an oblique angle relative to the first surface of the distributor plate so that gas flowing through the canted passageway changes direction as it passes through the distributor plate.

20060027326, Feb 9, 2006

Aug 22, 2005

11/208964

Craig Carpenter - Boise ID, US
Ross Dando - Nampa ID, US
Allen Mardian - Boise ID, US
Kevin Hamer - Meridian ID, US
Raynald Cantin - Boise ID, US
Philip Campbell - Meridian ID, US
Kimberly Tschepen - Corvallis OR, US
Randy Mercil - Boise ID, US

C23F 1/00

156345310

A semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material. An interfacial structure includes a body having a substrate passageway extending therethrough. The passageway includes walls at least a portion of which are substantially metallic. The body includes material peripheral of the walls which is substantially non-metallic and thermally insulative. The substantially non-metallic material has mounting openings extending at least partially therein.