Kim Lee

6376985, Apr 23, 2002

Mar 31, 1998

09/052903

Kim Y. Lee - Fremont CA
Marian Mankos - San Francisco CA
C. Neil Berglund - Oregon City OR

Applied Materials, Inc. - Santa Clara CA

H01J 4006

313542, 313544, 313523, 313531, 313530, 313540

A photocathode having a gate electrode so that modulation of the resulting electron beam is accomplished independently of the laser beam. The photocathode includes a transparent substrate, a photoemitter, and an electrically separate gate electrode surrounding an emission region of the photoemitter. The electron beam emission from the emission region is modulated by voltages supplied to the gate electrode. In addition, the gate electrode may have multiple segments that are capable of shaping the electron beam in response to voltages supplied individually to each of the multiple segments.

6538256, Mar 25, 2003

Aug 17, 2000

09/641099

Marian Mankos - San Francisco CA
Vidhya Krishnamurthi - Los Altos CA
Kim Y. Lee - Fremont CA

Applied Materials, Inc. - Santa Clara CA

H01J 3708

25049224, 2504922, 250396 R, 315366

A method and system for electron beam lithography at high throughput with shorter electron beam column length, reduced electron-electron interactions, and higher beam current. The system includes a photocathode having a pattern composed of a periodic array of apertures with a specific geometry. The spacing of the apertures is chosen so as to maximize the transmission of the laser beam through apertures significantly smaller than the photon wavelength. The patterned photocathode is illuminated by an array of laser beams to allow blanking and gray-beam modulation of the individual beams at the source level by the switching of the individual laser beams in the array. Potential applications for this invention include electron beam direct write on wafers and mask patterning.

6555830, Apr 29, 2003

Aug 15, 2000

09/638376

Marian Mankos - San Francisco CA
Kim Y. Lee - Fremont CA
Ming Yu - Fremont CA

Applied Materials, Inc. - Santa Clara CA

G21G 500

2504922, 250250, 250310, 250311, 25049221

The microcolumn configuration of the present invention provides for emission noise reduction through the use of a screened beam-limiting aperture for monitoring the electron beam current. This novel approach utilizes a screening aperture located between the emitter and the beam-limiting aperture, which screening aperture collects most of the current transmitted by the first lens of the electron beam column. In order to achieve good noise suppression, the screening aperture should let through only the portion of the beam where the electrons are correlated. The current collected by the beam-limiting aperture is then used as a reference signal in the image processing. The elimination of this noise increases the detection sensitivity of an inspection tool. This reduces the total number of required pixels and therefore increases the throughput of the tool.

7086139, Aug 8, 2006

Apr 30, 2004

10/836136

Kim Y. Lee - Fremont CA, US
Jyh-Shuey Jerry Lo - San Jose CA, US

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

G11B 5/127
G11B 5/187

2960307, 2960312, 2960313, 2960315, 2960318, 360122

A pedestal is formed over a first pole piece layer and insulator materials are formed to surround it. A gap layer made of a non-magnetic insulator or metal is then formed over the pedestal and the insulator, followed by the optional formation of a seed layer. A second pole piece is formed over the gap layer with or without the seed layer by forming a patterned resist using E-beam lithography and electroplating second pole piece materials within the patterned resist. After milling to remove side portions of the gap layer and the optional seed layer, a chemical etch is performed to remove a top portion of the insulator materials. The pedestal is then notched and trimmed by ion milling using the second pole piece as a mask to form a central notched structure. Since the second pole piece is precisely centered over the pedestal prior to notching, the pedestal is notched symmetrically to form a notched structure having side walls with angled slopes.

7183224, Feb 27, 2007

Jul 30, 2003

10/631579

Kim Y. Lee - Fremont CA, US
Chun-Ming Wang - Fremont CA, US

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

H01L 21/302
H01L 21/461

438736, 438719, 257E21025

A method is invented for processing a thin-film head/semiconductor wafer. A layer of polymer is applied onto a wafer. A layer of dielectric material is added above the polymer layer. A layer of photoresist is added above the dielectric layer. The photoresist layer is patterned using a photolithography process. Exposed portions of the dielectric layer are removed. Exposed portions of the polymer layer are removed. Exposed portions of the wafer are removed. The polymer layer and any material thereabove is removed after hard bias/leads deposition.

7194796, Mar 27, 2007

Jul 10, 2003

10/617908

Kim Y. Lee - Fremont CA, US

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

G11B 5/127
G11B 5/33
B44C 1/22

2960312, 2960314, 2960315, 2960316, 2960318, 36032411, 216 22

A magnetic head and method for forming the same. Leads are added to a wafer stack having a free layer, a bias layer, and a spacer layer between the free layer and bias layer. A gap is formed between the leads. A protective layer is added to the wafer stack such that the gap is covered, as well as facing ends of the leads. Material is removed from at least one side area of the wafer stack using the protective layer as a mask. The protective layer is removed. A portion of the bias layer below the gap is processed for reducing a magnetic moment of the bias layer in the portion of the bias layer below the gap for forming a sensor in which magnetic moments of end portions of the free layer are pinned by magnetic moments of end portions of the bias layer, and preferably antiparallel thereto.

7324311, Jan 29, 2008

May 28, 2004

10/857095

Kim Y. Lee - Fremont CA, US
Tsann Lin - Saratoga CA, US

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

G11B 5/33
G11B 5/127

36032412, 3603241

A magnetoresistive sensor having a trackwidth defined by AFM biasing layers disposed beneath a free layer of the sensor. The present invention provides a current in plane magnetoresistive sensor that includes a non-magnetic, electrically conductive layer in a trackwidth region. The non-magnetic, electrically conductive layer can be for example Ta, but could be some other material. This non-magnetic, electrically conductive layer has first and second laterally opposed sides and a planar upper surface. First and second insulating layers are formed at each of the sides of the non-magnetic, electrically conductive layer, and bias layers extend laterally outward from the insulation layers. The bias layers can be constructed of either an antiferromagnetic (AFM) material or could be constructed of a hard magnetic material such as CoPtCr. The bias layers have planar upper surfaces that are coplanar with the upper surface of the non-magnetic, electrically conductive layer.

7343666, Mar 18, 2008

Jun 30, 2004

10/881782

Kim Y. Lee - Fremont CA, US
Jyh-Shuey Jerry Lo - San Jose CA, US
Dennis Richard McKean - Milpitas CA, US

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

G11B 5/127
H04R 31/00

2960316, 2960313, 2960315, 2960318, 75414, 216 62, 216 66, 216 67, 360122, 360126, 360317, 451 5, 451 41

In one illustrative example, a method for use in making a magnetic write head includes the steps of forming a first pole piece layer of a first pole piece; forming a patterned resist over the first pole piece layer; electroplating a pedestal over the first pole piece layer within a channel of the patterned resist; electroplating a metal gap layer over the pedestal within the channel of the patterned resist; forming a resist channel shrinking film over the patterned resist; baking the resist channel shrinking film over the patterned to thereby reduce a width of the channel; removing the resist channel shrinking film; electroplating a second pole piece within the reduced-width channel of the patterned resist; removing the patterned resist; and milling the pedestal, using the second pole piece as a mask, to form a central notched pedestal having side walls with angled slopes.