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Kien Nai Chuc

from San Jose, CA
Age ~70
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Also known as:
Kien N Chuc, Kien Nal Chuc, Kien Te Chuc
Phone and address:
1170 Arbol Way, San Jose, CA 95126
Related to:
Trang Thi Pham, 40Jacqueline N Duong, 65Jeffrey W Chuc, 33
Connected to:
Barbara Chuc, 49Eduard A Chuc, 51Ngoc N Chuc, 84Oscar Chuc, 41Teresa Chuc, 48Art C Chucales, 61Nicholas D Chucales, 83Tamela D Chucci, 64Geraldine S Chuchian, 82Thaddeus Chuchla, 27

Kien Chuc Phones & Addresses

  • 1170 Arbol Way, San Jose, CA 95126
  • San Francisco, CA
  • 11247 Terra Bella Dr, Cupertino, CA 95014
  • Sunnyvale, CA

Publications

Us Patents

Plasma Reactor Inductive Coil Antenna With Flat Surface Facing The Plasma

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US Patent:
6401652, Jun 11, 2002
Filed:
May 4, 2000
Appl. No.:
09/565568
Inventors:
Jonathan D. Mohn - Saratoga CA
Arthur H. Sato - San Jose CA
Kien Nai Chuc - Cupertino CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1600
US Classification:
118723AN, 118723 I, 118723 IR, 15634548, 438710
Abstract:
The present invention is embodied in a plasma reactor with an inductive coil antenna facing the reactor chamber in which the windings of the coil antenna have a flattened cross-sectional shape, the flat portion of the winding facing toward the plasma within the reactor. Preferably, the coil antenna is located outside the reactor and faces a ceiling or wall of the reactor chamber. The coil antenna may be a single helical coil winding or multiple concentric spiral windings.

Process Chamber For Dielectric Gapfill

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US Patent:
20070277734, Dec 6, 2007
Filed:
May 29, 2007
Appl. No.:
11/754916
Inventors:
Dmitry Lubomirsky - Cupertino CA, US
Qiwei Liang - Fremont CA, US
Soonam Park - Mountain View CA, US
Kien Chuc - San Jose CA, US
Ellie Yieh - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 16/00
US Classification:
118715000
Abstract:
A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system comprising a dual-channel showerhead positioned above the substrate stage. The showerhead may have a faceplate with a first set of openings through which the reactive radical precursor enters the deposition chamber, and a second set of openings through which a second dielectric precursor enters the deposition chamber. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.

Process Chamber For Dielectric Gapfill

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US Patent:
20070281106, Dec 6, 2007
Filed:
May 29, 2007
Appl. No.:
11/754924
Inventors:
Dmitry Lubomirsky - Cupertino CA, US
Qiwei Liang - Fremont CA, US
Soonam Park - Mountain View CA, US
Kien Chuc - San Jose CA, US
Ellie Yieh - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H05H 1/24
US Classification:
427569000
Abstract:
A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.

Process Chamber For Dielectric Gapfill

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US Patent:
20070289534, Dec 20, 2007
Filed:
May 29, 2007
Appl. No.:
11/754858
Inventors:
Dmitry Lubomirsky - Cupertino CA, US
Qiwei Liang - Fremont CA, US
Soonam Park - Mountain View CA, US
Kien Chuc - San Jose CA, US
Ellie Yieh - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 16/452
US Classification:
11872300R
Abstract:
A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a radiative heating system to heat the substrate that includes at least one light source, where at least some of the light emitted from the light source travels through the top side of the deposition chamber before reaching the substrate. The system may also include a precursor distribution system to introduce the reactive radical precursor and additional dielectric precursors to the deposition chamber. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.

Flow Control Features Of Cvd Chambers

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US Patent:
20110011338, Jan 20, 2011
Filed:
Jul 15, 2010
Appl. No.:
12/836726
Inventors:
Kien N. Chuc - Cupertino CA, US
Qiwei Liang - Fremont CA, US
Hanh D. Nguyen - San Jose CA, US
Xinglong Chen - San Jose CA, US
Matthew Miller - Newark CA, US
Soonam Park - Mountain View CA, US
Toan Q. Tran - San Jose CA, US
Adib Khan - Santa Clara CA, US
Dmitry Lubomirsky - Cupertino CA, US
Shankar Venkataraman - Santa Clara CA, US
Assignee:
APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:
C23C 16/00
US Classification:
118715
Abstract:
Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

Plasma Source Design

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US Patent:
20110114601, May 19, 2011
Filed:
Nov 18, 2010
Appl. No.:
12/949661
Inventors:
Dmitry LUBOMIRSKY - Cupertino CA, US
Matthew MILLER - Newark CA, US
Jay PINSON - San Jose CA, US
Kien CHUC - Cupertino CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23F 1/08
C23C 16/44
C23C 16/505
H05H 1/24
C23F 1/00
US Classification:
216 68, 1563451, 118723 R, 15634538, 15634537, 15634548, 15634524, 118723 MP, 118723 I, 427569
Abstract:
Embodiments of the present invention generally provide a plasma source apparatus, and method of using the same, that is able to generate radicals and/or gas ions in a plasma generation region that is symmetrically positioned around a magnetic core element by use of an electromagnetic energy source. In general, the orientation and shape of the plasma generation region and magnetic core allows for the effective and uniform coupling of the delivered electromagnetic energy to a gas disposed in the plasma generation region. In general, the improved characteristics of the plasma formed in the plasma generation region is able to improve deposition, etching and/or cleaning processes performed on a substrate or a portion of a processing chamber that is disposed downstream of the plasma generation region.

Plasma Source Design

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US Patent:
20110115378, May 19, 2011
Filed:
Oct 15, 2010
Appl. No.:
12/905940
Inventors:
Dmitry Lubomirsky - Cupertino CA, US
Matthew Miller - Fremont CA, US
Jay Pinson - San Jose CA, US
Kien Chuc - Cupertino CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H05B 31/26
US Classification:
31511121
Abstract:
Embodiments of the present invention generally provide a plasma source apparatus, and method of using the same, that is able to generate radicals and/or gas ions in a plasma generation region that is symmetrically positioned around a magnetic core element by use of an electromagnetic energy source. In general, the orientation and shape of the plasma generation region and magnetic core allows for the effective and uniform coupling of the delivered electromagnetic energy to a gas disposed in the plasma generation region. In general, the improved characteristics of the plasma formed in the plasma generation region is able to improve deposition, etching and/or cleaning processes performed on a substrate or a portion of a processing chamber that is disposed downstream of the plasma generation region.

Process Chamber For Dielectric Gapfill

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US Patent:
20120073501, Mar 29, 2012
Filed:
Sep 29, 2011
Appl. No.:
13/248567
Inventors:
Dmitry Lubomirsky - Cupertino CA, US
Qiwei Liang - Fremont CA, US
Soonam Park - Mountain View CA, US
Kien N. Chuc - San Jose CA, US
Ellie Yieh - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 16/50
C23C 16/455
US Classification:
118723 E, 118723 R
Abstract:
A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.
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Kien Nai Chuc from San Jose, CA, age ~70 Get Report