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Kezia Cheng

from Lowell, MA
Age ~65
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Related to:
Kezhan Cheng, 72Cheng KezhanSean J Cheng, 40Linhan Ma
Connected to:
Abigail K Cheng, 27Ada Cheng, 40Adele L Cheng, 48Akimi C Cheng, 83Algine C Cheng, 51Amanda Cheng, 43Angelia Cheng, 37Angus Cheng, 28Anny Cheng, 44Arnold X Cheng, 43

Kezia Cheng Phones & Addresses

  • Lowell, MA
  • Woburn, MA
  • Reading, MA

Publications

Us Patents

Electron Radiation Monitoring System To Prevent Gold Spitting And Resist Cross-Linking During Evaporation

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US Patent:
20110193576, Aug 11, 2011
Filed:
Jul 7, 2010
Appl. No.:
12/831855
Inventors:
Kezia Cheng - Lowell MA, US
International Classification:
G01R 27/08
US Classification:
324693
Abstract:
Disclosed herein are systems and methods for in-situ measurement of impurities on metal slugs utilized in electron-beam metal evaporation/deposition systems, and for increasing the production yield of a semiconductor manufacturing processes utilizing electron-beam metal evaporation/deposition systems. A voltage and/or a current level on an electrode disposed in a deposition chamber of an electron-beam metal evaporation/deposition system is monitored and used to measure contamination of the metal slug. Should the voltage or current reach a certain level, to the deposition is completed and the system is inspected for contamination.

Electron Radiation Monitoring System To Prevent Gold Spitting And Resist Cross-Linking During Evaporation

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US Patent:
20130069622, Mar 21, 2013
Filed:
Nov 16, 2012
Appl. No.:
13/678765
Inventors:
Kezia Cheng - Lowell MA, US
Assignee:
SKYWORKS SOLUTIONS, INC. - Woburn MA
International Classification:
G01N 27/00
H01L 21/02
US Classification:
324 711, 29 2501
Abstract:
Disclosed herein are systems and methods for in-situ measurement of impurities on metal slugs utilized in electron-beam metal evaporation/deposition systems, and for increasing the production yield of a semiconductor manufacturing processes utilizing electron-beam metal evaporation/deposition systems. A voltage and/or a current level on an electrode disposed in a deposition chamber of an electron-beam metal evaporation/deposition system is monitored and used to measure contamination of the metal slug. Should the voltage or current reach a certain level, to the deposition is completed and the system is inspected for contamination.

Systems And Methods For Improving Front-Side Process Uniformity By Back-Side Metallization

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US Patent:
20130143411, Jun 6, 2013
Filed:
Nov 15, 2012
Appl. No.:
13/678243
Inventors:
Kezia Cheng - Lowell MA, US
Assignee:
SKYWORKS SOLUTIONS, INC. - Woburn MA
International Classification:
H01L 21/3065
H01L 21/30
H01L 21/67
US Classification:
438710, 1563451, 118723 R, 438758
Abstract:
Disclosed are systems and methods for improving front-side process uniformity by back-side metallization. In some implementations, a metal layer can be formed on the back side of a semiconductor wafer prior to certain process steps such as plasma-based processes. Presence of such a back-side metal layer reduces variations in, for example, thickness of a deposited and/or etched layer resulting from the plasma-based processes. Such reduction in thickness variations can result from reduced variation in radio-frequency (RF) coupling during the plasma-based processes. Various examples of wafer types, back-side metal layer configurations, and plasma-based processes are disclosed.

Devices And Methods Related To A Sputtered Titanium Tungsten Layer Formed Over A Copper Interconnect Stack Structure

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US Patent:
20130221528, Aug 29, 2013
Filed:
Feb 22, 2013
Appl. No.:
13/774988
Inventors:
Kezia Cheng - Lowell MA, US
Assignee:
Skyworks Solutions, Inc. - Woburn MA
International Classification:
H01L 23/532
H01L 21/768
US Classification:
257751, 438643
Abstract:
Disclosed are devices and methods related to metallization of semiconductors. A metalized structure can include a stack disposed over a compound semiconductor, with the stack including a barrier, a copper (Cu) layer disposed over the barrier, and a first titanium (Ti) layer disposed over the Cu layer. The metalized structure can further include a sputtered titanium tungsten (TiW) layer disposed over the first Ti layer. The barrier can include an assembly of titanium nitride (TiN) and Ti layers. The metalized structure can further include a second Ti layer disposed over the sputtered TiW layer.

Copper Interconnects Having A Titanium-Platinum-Titanium Assembly Between Copper And Compound Semiconductor

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US Patent:
20130228924, Sep 5, 2013
Filed:
Feb 22, 2013
Appl. No.:
13/774228
Inventors:
Kezia Cheng - Lowell MA, US
Assignee:
SKYWORKS SOLUTIONS, INC. - Woburn MA
International Classification:
H01L 23/532
H01L 21/768
US Classification:
257751, 438643
Abstract:
Disclosed are devices and methods related to metallization of semiconductors. A metalized structure can include a first titanium (Ti) layer disposed over a compound semiconductor, a first barrier layer disposed over the first Ti layer, a second Ti layer disposed over the first barrier layer, and a copper (Cu) layer disposed over the second Ti layer. The second Ti layer can be configured to inhibit or reduce alloying of the Cu layer and the first barrier layer. The first Ti layer, the first barrier layer, and the second Ti layer can be configured to yield a barrier between the Cu layer and an ohmic metal layer formed on the compound semiconductor. The metalized structure can further include a third Ti layer disposed over the Cu layer and a second barrier layer disposed over the third Ti layer. The first and second barrier layers can include platinum (Pt) and/or palladium (Pd).

Copper Interconnects Having A Titanium-Titanium Nitride Assembly Between Copper And Compound Semiconductor

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US Patent:
20130234333, Sep 12, 2013
Filed:
Feb 22, 2013
Appl. No.:
13/774421
Inventors:
Kezia Cheng - Lowell MA, US
Assignee:
SKYWORKS SOLUTIONS, INC. - Woburn MA
International Classification:
H01L 23/532
H01L 21/768
US Classification:
257751, 438622, 257758
Abstract:
Disclosed are devices and methods related to metallization of semiconductors. A metalized structure can include a first titanium (Ti) layer disposed over a compound semiconductor, a first titanium nitride (TiN) layer disposed over the first Ti layer, and a copper (Cu) layer disposed over the first TiN layer. The first Ti layer and the first TiN layer can be configured as a barrier between the Cu layer and the compound semiconductor. The metalized structure can further include a second TiN layer disposed over the Cu layer and a first platinum (Pt) layer disposed over the second TiN layer.

Bulk Acoustic Wave Device With Piezoelectric Layer Formed By Atomic Layer Deposition

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US Patent:
20230108824, Apr 6, 2023
Filed:
Sep 30, 2022
Appl. No.:
17/937089
Inventors:
- Singapore, SG
Kwang Jae Shin - Yongin, KR
Kezia Cheng - Lowell MA, US
Alexandre Augusto Shirakawa - Cardiff by the Sea CA, US
International Classification:
H03H 3/04
H03H 9/02
Abstract:
Aspects of this disclosure relate to a bulk acoustic wave device with a plurality of piezoelectric layers having at least one polarization inversion. The bulk acoustic wave device can include a first piezoelectric layer and a second piezoelectric layer over the first piezoelectric layer. The second piezoelectric layer can be formed by atomic layer deposition. The second piezoelectric layer can have an opposite polarization relative to the first piezoelectric layer. Related filters, multiplexers, packaged radio frequency modules, radio frequency front ends, wireless communication devices, and methods are disclosed.

Method Of Manufacturing Bulk Acoustic Wave Device With Atomic Layer Deposition Of Piezoelectric Layer

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US Patent:
20230109080, Apr 6, 2023
Filed:
Sep 30, 2022
Appl. No.:
17/937175
Inventors:
- Singapore, SG
Kwang Jae Shin - Yongin, KR
Kezia Cheng - Lowell MA, US
Alexandre Augusto Shirakawa - Cardiff by the Sea CA, US
International Classification:
H03H 3/04
H03H 9/02
Abstract:
Aspects of this disclosure relate to method of manufacturing a bulk acoustic wave device. The method can include providing a bulk acoustic wave device structure including a first piezoelectric layer and forming a second piezoelectric layer over the first piezoelectric layer by atomic layer deposition. The second piezoelectric layer can have an opposite polarization relative to the first piezoelectric layer.
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Kezia Cheng from Lowell, MA, age ~65 Get Report