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Kevin Richard Verrier

from Hampton, NH
Age ~60

Kevin Verrier Phones & Addresses

  • 101 Esker Rd, Hampton, NH 03842 (603) 591-6598
  • Biddeford, ME

Publications

Us Patents

Workpiece Handling Alignment System

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US Patent:
7321299, Jan 22, 2008
Filed:
Jun 8, 2005
Appl. No.:
11/147973
Inventors:
Kevin R. Verrier - Hampton NH, US
David K. Bernhardt - Hudson MA, US
Jerry F. Negrotti - Beverly MA, US
Donald N. Polner - Marblehead MA, US
Assignee:
Axcelis Technologies, Inc. - Beverly MA
International Classification:
G08B 19/00
US Classification:
340521, 340679, 340680, 3406861, 3406862, 3406864, 3406865
Abstract:
Method and apparatus for use in setting up workpiece treatment or processing equipment. A disclosed system processes silicon wafers that are treated during processing steps in producing semiconductor integrated circuits. The processing equipment includes a wafer support that supports a wafer in a treatment region during wafer processing. A housing provides a controlled environment within the housing interior for processing the wafer on the wafer support. A mechanical transfer system transports wafers to and from the support. A wafer simulator is used to simulate wafer movement and includes a pressure sensor for monitoring contact between the simulator and the wafer transfer and support equipment. In one illustrated embodiment the wafer simulator is generally circular and includes three equally spaced pressure sensors for monitoring contact with wafer transport and support equipment.

Deceleration Lens

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US Patent:
8481960, Jul 9, 2013
Filed:
Jun 23, 2011
Appl. No.:
13/167399
Inventors:
Svetlana Radovanov - Marblehead MA, US
Jason Schaller - Austin TX, US
Richard White - Newmarket NH, US
Kevin Verrier - Newmarket NH, US
James Blanchette - Haverhill MA, US
Eric Hermanson - Georgetown MA, US
Kevin Daniels - Lynnfield MA, US
Assignee:
Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:
G21K 1/08
H01J 3/14
H01J 3/26
H01J 49/42
US Classification:
250396R, 25049221, 25049223, 250326 R, 250423 R, 2504921, 2504922
Abstract:
A system and method are disclosed for controlling an ion beam. A deceleration lens is disclosed for use in an ion implanter. The lens may include a suppression electrode, first and second focus electrodes, and first and second shields. The shields may be positioned between upper and lower portions of the suppression electrode. The first and second shields are positioned between the first focus electrode and an end station of the ion implanter. Thus positioned, the first and second shields protect support surfaces of said first and second focus electrodes from deposition of back-streaming particles generated from said ion beam. In some embodiments, the first and second focus electrodes may be adjustable to enable the electrode surfaces to be adjusted with respect to a direction of the ion beam. By adjusting the angle of the focus electrodes, parallelism of the ion beam can be controlled. Other embodiments are described and claimed.

Dual-Walled Exhaust Tubing For Vacuum Pump

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US Patent:
61809543, Jan 30, 2001
Filed:
May 22, 1997
Appl. No.:
8/862019
Inventors:
Kevin R. Verrier - Hampton NH
James P. Quill - Wakefield MA
A. Stuart Denholm - Lincoln MA
Assignee:
Eaton Corporation - Cleveland OH
International Classification:
H05H 1500
US Classification:
25049221
Abstract:
A dual walled exhaust assembly (28) is provided for an ion implantation system for connecting system components residing at differing voltage potentials. The assembly comprises a disposable corrugated inner tube (84) connected between inner mounting portions of a first end mount and a second end mount, and a permanent outer tube (82) connected between outer mounting portions of the first and second end mounts. The inner and outer tubes (84, 82) are constructed from polytetrafluoroethylene (PTFE), or some similar dielectric material with appropriate non-flammable properties. The inner corrugated surface of the tube (84) has a plurality of surfaces which are pitched downwardly toward an axis (87) of the inner tube to prevent contaminant accumulation. The corrugated surface also reduces the risk of arcing between the system components residing at differing voltage levels by effectively increasing the length of the ground path that a leakage current would need to traverse across the length of the tube. The outer tube provides a containment mechanism for containing the toxic effluent if the thinner inner wall should puncture, perhaps due to electrical discharge which might still occur as a result of contaminant build-up on the inner surface of the inner tube.

Temperature Controlled/Electrically Biased Wafer Surround

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US Patent:
20220246397, Aug 4, 2022
Filed:
Feb 4, 2021
Appl. No.:
17/167416
Inventors:
- Santa Clara CA, US
Simon Ruffell - Hamilton MA, US
Kevin Verrier - Hampton NH, US
International Classification:
H01J 37/305
H01J 37/304
H01J 37/32
Abstract:
A system and method for etching workpieces in a uniform manner are disclosed. The system includes a semiconductor processing system that generates a ribbon ion beam, and a workpiece holder that scans the workpiece through the ribbon ion beam. The workpiece holder includes a portion that extends beyond the workpiece, referred to as a halo. The halo may be independently heated to compensate for etch rate non-uniformities. In some embodiments, the halo may be independently biased such that its potential is different from the potential applied to the workpiece. In certain embodiments, the halo may be divided into a plurality of thermal zones that can be separately controlled. In this way, various etch rate non-uniformities may be addressed by controlling the potential and/or temperature of the various thermal zones of the halo.
Kevin Richard Verrier from Hampton, NH, age ~60 Get Report