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Kenneth A Lucchesi

from Palo Alto, CA
Age ~61
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Also known as:
Kenneth Adolph Lucchesi
Phone and address:
4250 El Camino Real APT D137, Palo Alto, CA 94306
(650) 533-5629
Related to:
Jeffrey W Lucchesi, 64Lauren A Lucchesi, 38Thomas F Horan, 49Deborah L Lucchesi, 71Megan S Bodnar, 48Tom Horan, 64Isabel Lucchesi, 57Andrew C Lucchesi, 69Isabel Lucchesi, 59Carole J Lucchesi, 94Marianne L Hamilton, 72
Connected to:
Angelo Lucchese, 31Bina M Lucchesi, 97Bryan D Lucchesi, 61Carole L Lucchesi, 73Cassie M Lucchesi, 36Charles L Lucchese, 48Cynthia L Lucchese, 64Deborah S Lucchesi, 68Francesco Lucchesi, 88Gina Lucchesi, 71

Kenneth Lucchesi Phones & Addresses

  • 4250 El Camino Real APT D137, Palo Alto, CA 94306 (650) 533-5629
  • 4250 El Camino Real, Palo Alto, CA 94306
  • 205 White Oak Ct, Folsom, CA 95630
  • Menlo Park, CA
  • Sacramento, CA

Resumes

Resumes

Kenneth Lucchesi Photo 1

Experienced Project Manager

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Location:
San Francisco Bay Area
Industry:
Financial Services
Kenneth Lucchesi Photo 2

Project Manager At Franklin Templeton

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Location:
San Francisco Bay Area
Industry:
Investment Management

Publications

Us Patents

Optimization Of Radiofrequency Signal Ground Return In Plasma Processing System

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US Patent:
20230059495, Feb 23, 2023
Filed:
Jan 30, 2021
Appl. No.:
17/793366
Inventors:
- Fremont CA, US
Felix Kozakevich - Sunnyvale CA, US
Bing Ji - Pleasanton CA, US
Ranadeep Bhowmick - San Jose CA, US
Kenneth Lucchesi - Newark CA, US
John Holland - San Jose CA, US
International Classification:
H01J 37/32
H01L 21/683
Abstract:
A fixed outer support flange (flange ) is formed to circumscribe an electrode within a plasma processing system. Flange has a vertical portion and a horizontal portion extending radially outward from a lower end of the vertical portion. An articulating outer support flange (flange ) is formed to circumscribe flange Flange has a vertical portion and a horizontal portion extending radially outward from a lower end of the vertical portion. The vertical portion of flange is positioned concentrically outside of the vertical portion of flange Flange is spaced apart from flange and moveable along the vertical portion of flange Each of a plurality of electrically conductive straps has a first end portion connected to flange and a second end portion connected to flange

Systems And Methods For Controlling Directionality Of Ions In An Edge Region By Using An Electrode Within A Coupling Ring

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US Patent:
20200227238, Jul 16, 2020
Filed:
Mar 18, 2020
Appl. No.:
16/823240
Inventors:
- Fremont CA, US
Alexei Marakhtanov - Albany CA, US
John Patrick Holland - San Jose CA, US
Zhigang Chen - Campbell CA, US
Felix Kozakevich - Sunnyvale CA, US
Kenneth Lucchesi - Newark CA, US
International Classification:
H01J 37/32
H01J 37/147
Abstract:
Systems and methods for controlling directionality of ion flux at an edge region within a plasma chamber are described. One of the systems includes a radio frequency (RF) generator that is configured to generate an RF signal, an impedance matching circuit coupled to the RF generator for receiving the RF signal to generate a modified RF signal, and a plasma chamber. The plasma chamber includes an edge ring and a coupling ring located below the edge ring and coupled to the first impedance matching circuit to receive the modified RF signal. The coupling ring includes an electrode that generates a capacitance between the electrode and the edge ring to control the directionality of the ion flux upon receiving the modified RF signal.

Active Control Of Radial Etch Uniformity

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US Patent:
20190385822, Dec 19, 2019
Filed:
Jun 18, 2018
Appl. No.:
16/011442
Inventors:
- Fremont CA, US
Felix Leib Kozakevich - Sunnyvale CA, US
John Holland - San Jose CA, US
Bing Ji - Pleasanton CA, US
Kenneth Lucchesi - Newark CA, US
International Classification:
H01J 37/32
H01L 21/67
Abstract:
Systems and methods for active control of radial etch uniformity are described. One of the methods includes generating a radio frequency (RF) signal having a fundamental frequency and generating another RF signal having a harmonic frequency. The harmonic frequency, or a phase, or a parameter level, or a combination thereof of the other RF signal are controlled to control harmonics of RF plasma sheath within a plasma chamber to achieve radial etch uniformity.

Systems And Methods For Achieving A Pre-Determined Factor Associated With An Edge Region Within A Plasma Chamber By Synchronizing Main And Edge Rf Generators

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US Patent:
20190244788, Aug 8, 2019
Filed:
Apr 15, 2019
Appl. No.:
16/384442
Inventors:
- Fremont CA, US
Felix Kozakevich - Sunnyvale CA, US
Michael C. Kellogg - San Francisco CA, US
John Patrick Holland - San Jose CA, US
Zhigang Chen - Campbell CA, US
Kenneth Lucchesi - Newark CA, US
Lin Zhao - Fremont CA, US
International Classification:
H01J 37/32
H01L 21/3065
H01L 21/67
H01L 21/687
Abstract:
Systems and methods for achieving a pre-determined factor associated with the edge region within the plasma chamber is described. One of the methods includes providing an RF signal to a main electrode within the plasma chamber. The RF signal is generated based on a frequency of operation of a first RF generator. The method further includes providing another RF signal to an edge electrode within the plasma chamber. The other RF signal is generated based on the frequency of operation of the first RF generator. The method includes receiving a first measurement of a variable, receiving a second measurement of the variable, and modifying a phase of the other RF signal based on the first measurement and the second measurement. The method includes changing a magnitude of a variable associated with a second RF generator to achieve the pre-determined factor.

Multi Regime Plasma Wafer Processing To Increase Directionality Of Ions

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US Patent:
20190080885, Mar 14, 2019
Filed:
Jun 14, 2018
Appl. No.:
16/008529
Inventors:
- Fremont CA, US
Lin Zhao - Fremont CA, US
Felix Kozakevich - Sunnyvale CA, US
Kenneth Lucchesi - Newark CA, US
Zhigang Chen - Campbell CA, US
John Patrick Holland - San Jose CA, US
International Classification:
H01J 37/32
Abstract:
Systems and methods for providing a multi regime plasma wafer processing are described. The systems and methods have three states. During a first one of the states, an etching operation is performed. In a second one of the states, a power level of a kilohertz radio frequency signal is greater than zero to increase directionality of ions that are incident on a bottom surface of a stack layer. In a third one of the states, there is a reduction in a loss of mask on top of the stack layer and deposition may be performed.

Systems And Methods For Controlling Directionality Of Ions In An Edge Region By Using An Electrode Within A Coupling Ring

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US Patent:
20190057839, Feb 21, 2019
Filed:
Oct 19, 2018
Appl. No.:
16/165950
Inventors:
- Fremont CA, US
Alexei Marakhtanov - Albany CA, US
John Patrick Holland - San Jose CA, US
Zhigang Chen - Campbell CA, US
Felix Kozakevich - Sunnyvale CA, US
Kenneth Lucchesi - Newark CA, US
International Classification:
H01J 37/32
H01J 37/147
Abstract:
Systems and methods for controlling directionality of ion flux at an edge region within a plasma chamber are described. One of the systems includes a radio frequency (RF) generator that is configured to generate an RF signal, an impedance matching circuit coupled to the RF generator for receiving the RF signal to generate a modified RF signal, and a plasma chamber. The plasma chamber includes an edge ring and a coupling ring located below the edge ring and coupled to the first impedance matching circuit to receive the modified RF signal. The coupling ring includes an electrode that generates a capacitance between the electrode and the edge ring to control the directionality of the ion flux upon receiving the modified RF signal.

Systems And Methods For Controlling Directionality Of Ions In An Edge Region By Using An Electrode Within A Coupling Ring

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US Patent:
20180082822, Mar 22, 2018
Filed:
Nov 28, 2017
Appl. No.:
15/825021
Inventors:
- Fremont CA, US
Alexei Marakhtanov - Albany CA, US
John Patrick Holland - San Jose CA, US
Zhigang Chen - Campbell CA, US
Felix Kozakevich - Sunnyvale CA, US
Kenneth Lucchesi - Newark CA, US
International Classification:
H01J 37/32
H01J 37/147
Abstract:
Systems and methods for controlling directionality of ion flux at an edge region within a plasma chamber are described. One of the systems includes a radio frequency (RF) generator that is configured to generate an RF signal, an impedance matching circuit coupled to the RF generator for receiving the RF signal to generate a modified RF signal, and a plasma chamber. The plasma chamber includes an edge ring and a coupling ring located below the edge ring and coupled to the first impedance matching circuit to receive the modified RF signal. The coupling ring includes an electrode that generates a capacitance between the electrode and the edge ring to control the directionality of the ion flux upon receiving the modified RF signal.

Systems And Methods For Achieving A Pre-Determined Factor Associated With An Edge Region Within A Plasma Chamber By Synchronizing Main And Edge Rf Generators

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US Patent:
20180025891, Jan 25, 2018
Filed:
Jun 28, 2017
Appl. No.:
15/636519
Inventors:
- Fremont CA, US
Felix Kozakevich - Sunnyvale CA, US
Michael C. Kellogg - San Francisco CA, US
John Patrick Holland - San Jose CA, US
Zhigang Chen - Campbell CA, US
Kenneth Lucchesi - Newark CA, US
Lin Zhao - Fremont CA, US
International Classification:
H01J 37/32
H01L 21/687
H01L 21/3065
H01L 21/67
Abstract:
Systems and methods for achieving a pre-determined factor associated with the edge region within the plasma chamber is described. One of the methods includes providing an RF signal to a main electrode within the plasma chamber. The RF signal is generated based on a frequency of operation of a first RF generator. The method further includes providing another RF signal to an edge electrode within the plasma chamber. The other RF signal is generated based on the frequency of operation of the first RF generator. The method includes receiving a first measurement of a variable, receiving a second measurement of the variable, and modifying a phase of the other RF signal based on the first measurement and the second measurement. The method includes changing a magnitude of a variable associated with a second RF generator to achieve the pre-determined factor.
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Kenneth A Lucchesi from Palo Alto, CA, age ~61 Get Report