US Patent:
20100328671, Dec 30, 2010
Inventors:
Marc A. Baldo - Lexington MA, US
Mihail Bora - Livermore CA, US
Jonathan K. Mapel - Boston MA, US
Kemal Celebi - Cambridge MA, US
International Classification:
G01N 21/55
H01L 31/18
US Classification:
356445, 438 24, 257E31124
Abstract:
A near-field surface plasmon detector is provided. The near-field surface plasmon detector includes one or more semiconductor layers that absorb one or more surface plasmons of thin metal films in the vicinity of the semiconductor layer. The surface plasmons are excited by incoming light being emitted from a light emitting source. The metal films are also employed as electrical contacts used to capture photocurrent generated after absorption of surface plasmons by the semiconductor layers.