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Kazuya Daito Phones & Addresses

  • Santa Clara, CA
  • 1812 Lee Way, Milpitas, CA 95035
  • Sunnyvale, CA

Work

Company: Applied materials Jan 2020 Position: Senior manager, mechanical engineering

Education

Degree: Masters School / High School: Tokyo Institute of Technology 2007 to 2009 Specialities: Mechanical Engineering

Skills

Design of Experiments • Thin Films • Semiconductors • R&D • Semiconductor Industry • Cvd • Pvd • Failure Analysis • Spc • Metrology • Process Engineering • Jmp • Manufacturing • Research and Development • Silicon • Engineering Management • Ic • Process Simulation • Product Engineering • Characterization

Languages

English • Japanese

Industries

Semiconductors

Resumes

Resumes

Kazuya Daito Photo 1

Senior Manager, Mechanical Engineering

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Location:
5225 west Wiley Post Way, Salt Lake City, UT 84116
Industry:
Semiconductors
Work:
Applied Materials
Senior Manager, Mechanical Engineering
Education:
Tokyo Institute of Technology 2007 - 2009
Masters, Mechanical Engineering
Tokyo Institute of Technology 2005 - 2007
Bachelor of Engineering, Bachelors, Engineering, Mechanical Engineering
Nara National College of Technology 2000 - 2005
Associates, Engineering, Mechanical Engineering
Skills:
Design of Experiments
Thin Films
Semiconductors
R&D
Semiconductor Industry
Cvd
Pvd
Failure Analysis
Spc
Metrology
Process Engineering
Jmp
Manufacturing
Research and Development
Silicon
Engineering Management
Ic
Process Simulation
Product Engineering
Characterization
Languages:
English
Japanese

Publications

Us Patents

Pvd Aln Film With Oxygen Doping For A Low Etch Rate Hardmask Film

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US Patent:
20130296158, Nov 7, 2013
Filed:
Apr 22, 2013
Appl. No.:
13/867606
Inventors:
Yong CAO - San Jose CA, US
Kazuya DAITO - Santa Clara CA, US
Rajkumar JAKKARAJU - Sunnyvale CA, US
Xianmin TANG - San Jose CA, US
International Classification:
C04B 35/581
C23C 14/06
US Classification:
501 984, 20419215
Abstract:
The present invention generally relates to a doped aluminum nitride hardmask and a method of making a doped aluminum nitride hardmask. By adding a small amount of dopant, such as oxygen, when forming the aluminum nitride hardmask, the wet etch rate of the hardmask can be significantly reduced. Additionally, due to the presence of the dopant, the grain size of the hardmask is reduced compared to a non-doped aluminum nitride hardmask. The reduced grain size leads to smoother features in the hardmask which leads to more precise etching of the underlying layer when utilizing the hardmask.

Multifunctional Printhead Service Station With Multi-Axis Motions

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US Patent:
20220363060, Nov 17, 2022
Filed:
Jan 12, 2022
Appl. No.:
17/647780
Inventors:
- Santa Clara CA, US
Kang LUO - Santa Clara CA, US
Kazuya DAITO - Milpitas CA, US
Kenneth S. LEDFORD - San Jose CA, US
Elsa MASSONNEAU - Sunnyvale CA, US
Alexey STEPANOV - Sunnyvale CA, US
Ludovic GODET - Sunnyvale CA, US
Mahendran CHIDAMBARAM - Saratoga CA, US
Visweswaren SIVARAMAKRISHNAN - Cupertino CA, US
Bahubali S. UPADHYE - Bangalore, IN
Hemantha RAJU - Bangalore, IN
International Classification:
B41J 2/165
Abstract:
Embodiments described herein relate to an inkjet service station and methods of servicing an inkjet printer with the inkjet service station. The inkjet service station is disposed in an inkjet printer of an inkjet chamber. The inkjet service station is operable to perform servicing operations on a processing apparatus of the inkjet printer. The servicing operations include at least one of printhead spitting, printhead purging, printhead flushing, printhead cleaning, printhead drying, or vacuum suction.

Inkjet Platform For Fabrication Of Optical Films And Structures

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US Patent:
20220363064, Nov 17, 2022
Filed:
Jan 12, 2022
Appl. No.:
17/647820
Inventors:
- Santa Clara CA, US
Ludovic Godet - Sunnyvale CA, US
Michael David-Scott Kemp - San Jose CA, US
Kang Luo - Santa Clara CA, US
Kazuya Daito - Milpitas CA, US
Kenneth S. Ledford - San Jose CA, US
Bahubali S. Upadhye - Bangalore, IN
Hemantha Raju - Bangalore, IN
John Rusconi - Dublin CA, US
Elsa Massonneau - Sunnyvale CA, US
Mahendran Chidambaram - Saratoga CA, US
Alexey Stepanov - Sunnyvale CA, US
Visweswaren Sivaramakrishnan - Cupertino CA, US
International Classification:
B41J 2/175
Abstract:
Embodiments described herein relate to an inkjet printing platform. The inkjet printing platform is utilized for fabrication of optical films and optical device structures. The inkjet printing platform includes a transfer chamber, one or more inkjet chambers, a plurality of auxiliary modules, a substrate flipper, and load ports. The inkjet printing platform is operable to perform an inkjet printing process on a substrate to form an optical film and/or an optical device.

Fluid Management System For Inkjet Machines

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US Patent:
20220355589, Nov 10, 2022
Filed:
Jan 12, 2022
Appl. No.:
17/647791
Inventors:
- Santa Clara CA, US
Kazuya DAITO - Milpitas CA, US
Kang LUO - Santa Clara CA, US
Elsa MASSONNEAU - Sunnyvale CA, US
Alexey STEPANOV - Sunnyvale CA, US
Ludovic GODET - Sunnyvale CA, US
International Classification:
B41J 2/165
Abstract:
Embodiments described herein provide for a fluid management system and a method of utilizing the fluid management system. The fluid management system includes a servicing fluid management system and an ink management system. The servicing fluid management system and the ink management system run in parallel within an inkjet chamber. The ink management system supports the flow of inkjet materials between a waste tank, one or more inkjet material supply tanks, an ink management module, and the inkjet printer. The servicing fluid management system supports the flow of servicing fluids between the waste tank, one or more servicing fluid supply tanks, a servicing fluid management module, and the inkjet printer.

Method Of Measuring Efficiency For Optical Devices

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US Patent:
20220291082, Sep 15, 2022
Filed:
Mar 7, 2022
Appl. No.:
17/653785
Inventors:
- Santa Clara CA, US
Yangyang SUN - San Jose CA, US
Kazuya DAITO - Milpitas CA, US
Ludovic GODET - Sunnyvale CA, US
International Classification:
G01M 11/02
G01S 17/89
G01S 7/481
Abstract:
Embodiments of the present disclosure relate to measurement systems and methods of measuring efficiency of optical devices. In one example, the measurement systems include a light source, a mirror, an illumination source, and a sensor. The light source provides a light beam to the optical device to be diffracted into diffraction beams having diffraction orders. The diffractions beams form a diffraction pattern. The method includes positioning the optical device in the measurement system and directing the diffraction beams to the sensor. The sensor is operable to measure the efficiency of the optical device by measuring the diffraction pattern.

Selective Tungsten Deposition Within Trench Structures

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US Patent:
20220181201, Jun 9, 2022
Filed:
Dec 3, 2020
Appl. No.:
17/110826
Inventors:
- Santa Clara CA, US
Yufei HU - Fremont CA, US
He REN - San Jose CA, US
Yu LEI - Belmont CA, US
Shi YOU - San Jose CA, US
Kazuya DAITO - Milpitas CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/768
Abstract:
Embodiments of the disclosure provide methods which reduce or eliminate lateral growth of a selective tungsten layer. Further embodiments provide an integrated clean and deposition method which improves the selectivity of selectively deposited tungsten on trench structures. Additional embodiments provide methods for forming a more uniform and selective bottom-up gap fill for trench structures with improved film properties.

Method For Forming A Metal Gapfill

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US Patent:
20200303250, Sep 24, 2020
Filed:
Feb 27, 2020
Appl. No.:
16/803842
Inventors:
- Santa Clara CA, US
Feiyue MA - San Jose CA, US
Kai WU - Palo Alto CA, US
Yu LEI - Belmont CA, US
Kazuya DAITO - Milpitas CA, US
Yi XU - San Jose CA, US
Vikash BANTHIA - Los Altos CA, US
Mei CHANG - Saratoga CA, US
He REN - San Jose CA, US
Raymond Hoiman HUNG - Palo Alto CA, US
Yakuan YAO - Campbell CA, US
Avgerinos V. GELATOS - Scotts Valley CA, US
David T. OR - Santa Clara CA, US
Jing ZHOU - San Jose CA, US
Guoqiang JIAN - Foster City CA, US
Chi-Chou LIN - San Jose CA, US
Yiming LAI - San Jose CA, US
Jia YE - San Jose CA, US
Jenn-Yue WANG - Fremont CA, US
International Classification:
H01L 21/768
H01L 21/3213
H01L 21/02
Abstract:
The present disclosure generally relates to methods for processing of substrates, and more particularly relates to methods for forming a metal gapfill. In one implementation, the method includes forming a metal gapfill in an opening using a multi-step process. The multi-step process includes forming a first portion of the metal gapfill, performing a sputter process to form one or more layers on one or more side walls, and growing a second portion of the metal gapfill to fill the opening with the metal gapfill. The metal gapfill formed by the multi-step process is seamless, and the one or more layers formed on the one or more side walls seal any gaps or defects between the metal gapfill and the side walls. As a result, fluids utilized in subsequent processes do not diffuse through the metal gapfill.

Blocker Plate For Use In A Substrate Process Chamber

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US Patent:
20190382895, Dec 19, 2019
Filed:
Jul 24, 2019
Appl. No.:
16/520646
Inventors:
- Santa Clara CA, US
YU LEI - BELMONT CA, US
YI XU - SAN JOSE CA, US
KAZUYA DAITO - MILPITAS CA, US
PINGYAN LEI - SAN JOSE CA, US
DIEN-YEH WU - SAN JOSE CA, US
UMESH M. KELKAR - SANTA CLARA CA, US
VIKASH BANTHIA - LOS ALTOS CA, US
International Classification:
C23C 16/455
Abstract:
Embodiments of a blocker plate for use in a substrate process chamber are disclosed herein. In some embodiments, a blocker plate for use in a substrate processing chamber configured to process substrates having a given diameter includes: an annular rim; a central plate disposed within the annular rim; and a plurality of spokes coupling the central plate to the annular rim.
Kazuya Daito from Santa Clara, CA Get Report