Search

Karen J Hulting

from Plymouth, MN
Age ~63
Get Report
Also known as:
Karen Jensen Hulting, Karen F Hulting, Karen Lorraine Jensen, Karen L Jensen, Kathleen Hulting, Frederick Hulting
Phone and address:
16630 39Th Pl N, Minneapolis, MN 55446
(763) 553-9514
Related to:
Angie Sargent, 58Lori A Jensen, 59Jennifer Berdan, 53Timothy B Jensen, 66Lonnie Jensen
Connected to:
Anne Hultine, 36Bobbie Hultine, 52Carla J Hultine, 60Debra K Hultine, 69Lisa M Hultine, 61Richard L Hultine, 88Robert W Hultine, 89Ashley E Hultman, 45Barbara J Hultman, 71Jamie K Hultman, 43

Karen Hulting Phones & Addresses

  • 16630 39Th Pl N, Minneapolis, MN 55446 (763) 553-9514
  • 16630 39Th St, Minneapolis, MN 55446 (763) 553-9514
  • Plymouth, MN
  • Houston, TX
  • New Kensington, PA
  • Saint Paul, MN
  • Rochester Hills, MI

Work

Company: Medtronic Jul 2019 Position: Distinguished statistician

Education

Degree: Doctorates, Doctor of Philosophy School / High School: Iowa State University 1983 to 1989 Specialities: Statistics, Philosophy

Skills

Mathematics • Computer Science

Industries

Medical Devices

Resumes

Resumes

Karen Hulting Photo 1

Distinguished Statistician

View page
Location:
Minneapolis, MN
Industry:
Medical Devices
Work:
Medtronic
Distinguished Statistician
Education:
Iowa State University 1983 - 1989
Doctorates, Doctor of Philosophy, Statistics, Philosophy St. Olaf College 1979 - 1983
Bachelors, Bachelor of Arts, Mathematics, Computer Science
Skills:
Mathematics
Computer Science

Publications

Us Patents

Tantalum Anodes For High Voltage Capacitors Employed By Implantable Medical Devices And Fabrication Thereof

View page
US Patent:
20090078344, Mar 26, 2009
Filed:
Sep 24, 2007
Appl. No.:
11/860221
Inventors:
Kevin M. Gaffney - Dayton MN, US
Kurt J. Casby - Grant MN, US
John D. Norton - New Brighton MN, US
Angela M. Rodgers - Minneapolis MN, US
Karen J. Hulting - Plymouth MN, US
International Classification:
C22F 1/18
US Classification:
148668
Abstract:
A high voltage capacitor anode for an implantable medical device is fabricated by sintering, anodizing and heat treating a pressed tantalum powder slug. The sintering may be performed at a temperature between approximately 1500 C. and approximately 1600 C. for a time between approximately 3 minutes and approximately 35 minutes; subsequent anodization may be performed by immersing the slug in an electrolyte at a temperature between approximately 15 C. and approximately 30 C. and then applying a voltage across the slug, the voltage being between approximately 175 Volts and approximately 375 Volts; subsequent heat treating may be performed at a temperature between approximately 400 C. and approximately 460 C. for a time between approximately 50 minutes and approximately 65 minutes. Following heat treating, the anode is reformed by a second anodization.
Control profile
Karen J Hulting from Plymouth, MN, age ~63 Get Report